MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# D44H11 Features * * With TO-220 package Designed for general purpose power amplification NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 80 80 5.0 20 10 50 -55 to +150 -55 to +150 TO-220 Unit V V V A A W O C O C B L M C D A K E PIN F G I J 1 2 3 N H H PIN 1. PIN 2. PIN 3. Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage (IC=30mAdc, IB =0) Collector-Base Cutoff Current (VCB=80Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) 80 --- Vdc BASE COLLECTOR EMITTER OFF CHARACTERISTICS V (BR)CEO ICBO IEBO --- 10 uAdc --- 100 uAdc ON CHARACTERISTICS V CE(sat) V BE(sat) Collector-Emitter Saturation Voltage (IC=8.0Adc, IB =0.4Adc) Base-Emitter Saturation Voltage (IC=8.0Adc, IB =0.8Adc) --- 1.0 Vdc --- 1.5 Vdc A B C D E F G H I J K L M N INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115 www.mccsemi.com MM 14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92