2N6836 - Motorola / Freescale Semiconductor

3–1

Motorola Bipolar Power Transistor Device Data





 

  

   

These transistors are designed for high–voltage, high–speed, power switching in

inductive circuits where fall time is critical. They are particularly suited for

line–operated switchmode applications.

•Switching Regulators

•Inverters

•Motor Controls

•Deflection Circuits

•Fast Turn–Off Times

30 ns Inductive Fall Time — 75

C (Typ)

50 ns Inductive Crossover Time — 75

C (Typ)

600 ns Inductive Storage Time — 75

C (Typ)

•Operating Temperature Range –65 to +200

•100

C Performance Specified for:

Reverse–Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎÎ

450

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎÎ

850

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

6.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation@ TC = 25

@ TC = 100

Derate above 25

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

175

100

1.0

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎ

1.0

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5.0 Seconds

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

10%.

(2) Indicate JEDEC Registered Data.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N6836/D

 Motorola, Inc. 1995



15 AMPERE

NPN SILICON

POWER TRANSISTOR

450 VOLTS

175 WATTS

CASE 1–07

TO–204AA

(TO–3)

2N6836

3–2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 2)

(IC = 100 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

450*

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.25*

1.5*

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 850 Vdc, RBE = 50 Ω, TC = 100

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0*

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 15*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 16

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.7 Adc)

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 10 Adc, IB = 1.0 Adc, TC = 100

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.2

2.5*

3.0*

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 10 Adc, IB = 1.0 Adc, TC = 100

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.5*

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

8.0*

5.0

ÎÎÎÎ

—

ÎÎÎÎ

30*

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product

(VCE = 10 Vdc, IC = 0.25 Adc, ftest = 10 MHz)

ÎÎÎÎ

10*

ÎÎÎÎ

—

ÎÎÎÎ

75*

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

50*

ÎÎÎÎ

—

ÎÎÎÎ

400*

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc,

VCC = 250 Vdc,

IB1 = 1.0 Adc,

PW = 30 µs,

Duty Cycle

2.0%)

ÎÎÎÎÎÎÎÎ

(IB2 = 2.6 Adc,

RB2 = 1.6 Ω)

ÎÎÎÎ

—

ÎÎÎÎ

100*

ÎÎÎ

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎ

C = 10 Adc,

VCC = 250 Vdc,

IB1 = 1.0 Adc,

PW = 30 µs,

Duty Cycle

2.0%)

ÎÎÎÎÎÎÎÎ

B2 = 2.6 Adc,

RB2 = 1.6 Ω)

ÎÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎÎ

500*

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc,

VCC = 250 Vdc,

IB1 = 1.0 Adc,

PW = 30 µs,

Duty Cycle

2.0%)

ÎÎÎÎÎÎÎÎ

(IB2 = 2.6 Adc,

RB2 = 1.6 Ω)

ÎÎÎÎ

—

ÎÎÎÎ

1200

ÎÎÎÎ

3000*

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

IB1 = 1.0 Adc,

PW = 30 µs,

Duty Cycle

2.0%)

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎÎ

250*

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

Duty Cycle

2.0%)

ÎÎÎÎÎÎÎÎ

(VBE(off) = 5.0 Vdc)

ÎÎÎÎ

—

ÎÎÎÎ

650

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

2.0%)

ÎÎÎÎÎÎÎÎ

(VBE(off) = 5.0 Vdc)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load (Table 2)

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc,

IB1 = 1.0 Adc,

VBE(off) = 5.0 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 100

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

800

ÎÎÎÎ

1500*

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc,

IB1 = 1.0 Adc,

VBE(off) = 5.0 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 100

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

150*

ÎÎÎ

ÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc,

IB1 = 1.0 Adc,

VBE(off) = 5.0 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

200*

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

IB1 = 1.0 Adc,

VBE(off) = 5.0 Vdc,

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 150

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1050

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 150

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

120

ÎÎÎÎ

—

ÎÎÎ

(1) Pulse Test: PW ± 300 µs, Duty Cycle

2%.

(2) fT = |she| ftest.

*Indicates JEDEC Registered Limit.

2N6836

3–3

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

3.0 0.2 0.5 1.0 10 20

5.0

Figure 2. Collector Saturation Region

2.0

0.02 IB, BASE CURRENT (AMPS)

0.1 0.05 0.1 0.2 0.5 5.0 10

0.7

0.5

0.3

0.2 IC = 1 A

TC = 25

10 A

hFE, DC CURRENT GAIN

TC = 100

VCE = 5.0 V

5.0 2.0

5 A

1.0

15 A

2.0

VBE, BASE–EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

Figure 3. Collector–Emitter Saturation Voltage

5.0

0.15 IC, COLLECTOR CURRENT (AMPS)

0.05 0.2 0.5 1.0 3.0 5.0 15

2.0

1.0

0.50

0.20

f = 5

TJ = 25

3.0

0.10

f = 10

TJ = 100

f = 10

TJ = 25

1.5

0.15

IC, COLLECTOR CURRENT (AMPS)

0.20 0.50 1.0 3.0 5.0 15

1.0

0.70

0.40

0.30

0.15

Figure 4. Base–Emitter Voltage

0.50

0.70

0.30

0.07

0.3 0.7 2.0 7.0 10

0.20

100

TC = 25

f = 10

0.30 0.70 2.0 7.0 10

104

–0.4

Figure 5. Collector Cutoff Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

103

101

100

10–1

, COLLECTOR CURRENT ( A)

–0.2 0 +0.2 +0.4 +0.6

VCE = 250 V

TJ = 150

100

REVERSE FORWARD

102125

10000

0.1

Figure 6. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

10 1.0 850100

C, CAPACITANCE (pF)

2000

100

Cob

Cib

5000

3000

1000

200

300

500

TC = 25

2N6836

3–4 Motorola Bipolar Power Transistor Device Data

TYPICAL DYNAMIC CHARACTERISTICS

5000

1.5

Figure 7. Storage Time

IC, COLLECTOR CURRENT (AMPS)

0.05 3.0 5.0 7.0 10 15

500

3000

tsv, STORAGE TIME (ns)

f = 5

TC = 75

VCC = 20 VOLTS

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

Figure 8. Storage Time

IC, COLLECTOR CURRENT (AMPS)

tsv, STORAGE TIME (ns)

200

1000

2000

100

300

0.07

2.0

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

f = 10

TC = 75

VCC = 20 VOLTS

5000

0.05

500

3000

200

1000

2000

100

300

700

1.5 3.0 5.0 7.0 10 152.0

1000

1.5

Figure 9. Collector Current Fall Time

IC, COLLECTOR CURRENT (AMPS)

10 3.0 5.02.0 10 15

500

tfi, COLLECTOR CURRENT FALL TIME (ns)

100

200

1000

Figure 10. Collector Current Fall Time

IC, COLLECTOR CURRENT (AMPS)

500

tfi, COLLECTOR CURRENT FALL TIME (ns)

100

200

f = 5

TC = 75

VCC = 20 VOLTS

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

300

7.0

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

f = 10

TC = 75

VCC = 20 VOLTS

300

1.5 3.0 5.02.0 10 157.0

1500

Figure 11. Crossover Time

IC, COLLECTOR CURRENT (AMPS)

500

tc, CROSSOVER TIME (ns)

100

300

Figure 12. Crossover Time

IC, COLLECTOR CURRENT (AMPS)

tc, CROSSOVER TIME (ns)

1000

200

f = 5

TC = 75

VCC = 20 VOLTS

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

1.5 3.0 5.02.0 10 157.0

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

f = 10

TC = 75

VCC = 20 VOLTS

1.5 3.0 5.02.0 10 157.0

1500

500

100

300

1000

200

2N6836

3–5

Motorola Bipolar Power Transistor Device Data

Figure 13. Inductive Switching Measurements

TIME

Figure 14. Peak Reverse Base Current

IB2, REVERSE BASE CURRENT (AMPS)

0VBE(off), REVERSE BASE VOLTAGE (VOLTS)

03.0 4.0

IB1 = 2.0 AMPS

IC = 10 AMPS

TC = 25

1.0 2.0 5.0

IB1 = 1.0 AMPS

90% VCE(pk)

IC90% IC(pk)

IC pk VCE(pk)

90% IB1

VCE

IB10% VCE(pk) 2% IC

tsv trv tfi tti

10%

IC pk

GUARANTEED SAFE OPERATING AREA LIMITS

5.0

Figure 15. Maximum Forward Bias

Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.50

0.02 10 20 30 45050

0.10

0.05

IC, COLLECTOR CURRENT (AMPS)

TC = 25

Cdc 1 ms

70 300200100

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

100

Figure 16. Maximum Reverse Bias

Safe Operating Area

VCE, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)

0150 200 250 850350

6.0

2.0

IC(pk), PEAK COLLECTOR CURRENT (AMPS)

100

450 700600

VBE(off) = 0 V

VBE(off) = 1 to 5 V

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 15 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC

C. Second breakdown limitations do not

derate the same as thermal limitations. Allowable current at

the voltages shown on Figure 15 may be found at any case

temperature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figure 17. At high

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations im-

posed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base–to–emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these de-

vices is specified as Reverse Bias Safe Operating Area and

represents the voltage–current condition allowable during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 16 gives the RBSOA characteristics.

2N6836

3–6 Motorola Bipolar Power Transistor Device Data

Figure 17. Thermal Response

t, TIME (ms)

1.0

0.01

0.1

0.01 0.1 1.0 10 100 1 k

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

JC(t) = r(t) R

JC = 1.0

C/W

TJ(pk) – TC = P(pk) R

JC(t)

100

0 40 80 120 200

Figure 18. Power Derating

TC, CASE TEMPERATURE (

POWER DERATING FACTOR (%)

THERMAL

DERATING

SECOND BREAKDOWN

DERATING

160

Table 1. Resistive Load Switching

H.P. 214

EQUIV.

P.G. *IB*IC

td and trts and tf

TUT

VCC

*NOTE: Adjust – V to obtain desired VBE(off) at Point A.

RB = 10

Vin

0 V

[

11 V

15 ns

VCC = 250 Vdc

RL = 25 Ω

IC = 10 Adc

IB = 1.0 Adc

0 V

[

– 35 V

+ Vdc

[

11 Vdc

100

2N6191

500

F0.02

1.0

RB1

RB2

100

– V

0 V + V

– 5 V

*Tektronix P–6042 or equivalent.

VCC = 250 IB1 = 1.0 Adc RB1 = 10 Ω

RL = 25 ΩIB2 = 2.6 Adc RB2 = 1.6 Ω

IC = 10 Adc For VBE(off) = 5.0 V RB2 = 0 Ω

H.P. 214

EQUIV.

P.G.

2N5337

0.02

–

*IB*ICRL

TUT

VCC

2N6836

3–7

Motorola Bipolar Power Transistor Device Data

Table 2. Inductive Load Switching

V(BR)CEO Inductive Switching RBSOA

L = 10 mH L = 200 µH L = 200 µH

RB2 =

RB2 = 0 RB2 = 0

VCC = 20 Volts VCC = 20 Volts VCC = 20 Volts

RB1 selected for desired IB1 RB1 selected for desired IB1

*Tektronix Scope — Tektronix

*P–6042 or 7403 or

*Equivalent Equivalent Note: Adjust –V to obtain desired VBE(off) at Point A.

[

Lcoil (ICpk)

T1 adjusted to obtain IC(pk)

VCC

0 V

≈

–35 V

+ V

[

11 V

100

2N6191

500

1.0

RB1

RB2

100

– V

0 V

+ V

– V

H.P. 214

OR EQUIV.

P.G.

2N5337

0.02

–

*IB

T.U.T.

VCC

0.02

*IC

IC(pk)

VCE(pk)

IB1

IB2

VCE

Vclamp

+ –

VCE(pk) = VCE(clamp)

MR856

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

IC(pk) = 10 Amps

IB1 = 1.0 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 400 Volts

TC = 25°C

Time Base =

20 ns/cm

tsv tfi, tc

IC(pk) = 10 Amps

IB1 = 1.0 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 400 Volts

TC = 25°C

Time Base =

100 ns/cm

VCE(pk)

IB1

IB2

VCE(sat)

tsv= 370 ns

IC(pk) tfi = 20 ns

VCE(pk)

VCE(sat) 24 ns

2N6836

3–8 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

How to reach us:

USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .

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