MJE172 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 

  

. . . designed for low power audio amplifier and low current, high speed switching

applications.

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc — MJE171, MJE181

VCEO(sus) = 80 Vdc — MJE172, MJE182

•DC Current Gain —

hFE = 30 (Min) @ IC = 0.5 Adc

hFE = 12 (Min) @ IC = 1.5 Adc

•Current–Gain — Bandwidth Product —

fT = 50 MHz (Min) @ IC = 100 mAdc

•Annular Construction for Low Leakages —

ICBO = 100 nA (Max) @ Rated VCB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

MJE171

MJE181

ÎÎÎÎ

MJE172

MJE182

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

7.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

3.0

6.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

1.5

0.012

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

12.5

0.1

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

θJC

ÎÎÎÎÎÎÎ

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎ

θJA

ÎÎÎÎÎÎÎ

83.4

ÎÎÎ

C/W

Figure 1. Power Derating

T, TEMPERATURE (

040 60 100 120 160

8.0

6.0

PD, POWER DISSIPATION (WATTS)

2.8

2.0

1.6

1.2

2.4

4.00.8

2.00.4

80 140

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE171/D

 Motorola, Inc. 1995









*Motorola Preferred Device

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–80 VOLTS

12.5 WATTS





 



CASE 77–08

TO–225AA

REV 2

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0) MJE171, MJE181

MJE172, MJE182

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0) MJE171, MJE181

(VCB = 100 Vdc, IE = 0) MJE172, MJE182

(VCB = 80 Vdc, IE = 0, TC = 150

C) MJE171, MJE181

(VCB = 100 Vdc, IE = 0, TC = 150

C) MJE172, MJE182

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

µAdc

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.5 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

250

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.3

0.9

1.7

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (1)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171/MJE172

MJE181/MJE182

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

(1) fT = hfe• ftest.

Figure 2. Switching Time Test Circuit

+11 V 25

–9.0 V

–4 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

IC, COLLECTOR CURRENT (AMPS)

VCE = 30 V

IC/IB = 10

VBE(off) = 4.0 V

TJ = 25

t, TIME (ns)

500

300

200

100

10.01 0.03 0.05 0.50.20.1 0.3 10

Figure 3. Turn–On Time

521 3

NPN MJE181/182

PNP MJE171/172

0.02

   

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

JC(t) = r(t)

JC = 10

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.2

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

0 (SINGLE PULSE)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01 30

2.0

5.0

0.1

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 5. MJE171, MJE172

500

5.0 ms

1.0

2010 505.03.02.01.0 100

100

TJ = 150

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01

Figure 6. MJE181, MJE182

IC, COLLECTOR CURRENT (AMP)

MJE171

MJE172

0.02

0.05

0.2

0.5

302010 505.03.02.01.0 100

2.0

5.0

0.1

1.0

0.02

0.05

0.2

0.5

100

500

5.0 ms dc

MJE181

MJE182

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

TJ = 150

7.0

ACTIVE–REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of a

transistor — average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE lim-

its of the transistor that must be observed for reliable opera-

tion; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150

C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperature, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

500

300

200

100

Figure 7. Turn–Off Time

t, TIME (ns)

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 10521 3

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25

VR, REVERSE VOLTAGE (VOLTS)

10 50

100

Figure 8. Capacitance

20105.03.02.01.00.5

C, CAPACITANCE (pF)

0.7

TJ = 25

Cib

Cob

NPN MJE181/182

PNP MJE171/172

PNP MJE171/MJE172

NPN MJE181/MJE182

307.0

   

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

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MJE171/D

*MJE171/D*

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