NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
SB170 thru SB1100
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
80
56
80
SB170
70
49
70
100
70
100
90
63
90
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Lengths
@TL
=
100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage at
1.0
40
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R
0JL
50
C/W
C
J
Typical Junction Capacitance (Note 1)
30
pF
I
R
@T
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.02
2.0
mA
V
A
A
V
UNIT
V
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.71
2.00 2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
I
F
=1.0A,T
J
=100 C
I
F
=1.0A,T
J
=25 C
0.79
0.69
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 1.0 Ampere
SB180 SB190 SB1100
SEMICONDUCTOR
LITE-ON
REV. 8, Sep-2012, KDHC03