= JDUNPNIE IST PIVBRIYIAS (PCTAR) SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) o {Ee 3 te Audio Amplifier Applications * 280735 BRP-P PRBOMRRC BL CHET O e Recommended for Driver Stage in Class B Puesh Pull Amplifier with 28C735 as a Complement. BAKER MAXIMUM RATINGS ( Ta= 25) Unit in mm O58MAX. P4.95MAX, 1 Ho | 4 ' s 3 | | 3i2 gibt bis a4s a a 6 of ed 127 Le An f" R\ at f + & yes ; 2 N 7 J Let tt es a th ea Tetg | -55~125 c K POT RAC IL oOMErIhHetHtto Produced by Perfect Crystal Device Technology. CHARACTERISTIC SYMBOL RATING UNIT L EMITTER avge-~ AR VcBo 35 Vv 2 COLLECTOR 3 BASE avgoe- zi AE Vogo 30 v fy ~n a q Bly RN ARE VEBO 5 Vv JEDEC _ a v FF & B&R Ig 100 mA ElAT - x & & & Fe In ~100 mA TOSHIBA 2-5B1A a2 vp 2 BR & Pa 300 mW # & iB Ea Tj 125 c 455 2scl33\ GSA ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL CONDITION MIN.| TYP.| MAx,| UNIT au? ek Le ht Bit Icpo | YVop=18V , Ig=o0 ~ 1 BA sl FL MH BE Ippo | VeB=5V , Ig=0 _ _ Ol aA i oi B yet 8 te (Note) hpR Vop=6V , Ig=2maA 200] 700 b7Y% Yay AUR fT Von= 6V Im=-lma 80 | MHz . Vop=6V Ip=0 av? 4 th Bl Cop ius a ~ ail, TU7A- oi > ARAL |Von(sat)) Io=10mA , Ip=1ma as v N- A Dive WBE Var Io=2mA > Vop=6Vv 0.6 _ Vv Vorn=6V In=-imaA HE =e #8 pi NF Rg =500Q, f =1kHz _ 6 10 aB Note} hpp Ci) FROLSCBML, RARRLCE DET, According to the value of h FE CLASSIFICATION MIN, MAX, 280783- GR 200 400 28C0733- BL 350 700 the 280738 is classified as follows. h #& h PARAMETERS (Typ, ) C Hiv 28H COMMON EMITTER, Vom=5V, Ip=-lmA =270HZ, Ta= 25 ) CHARACTERISTIC SYMBOL | 280733-0 | 280733-yY | 28c733-GR]| 2Scvs3-BL] UNIT ARAve BYR Cth 4H) hig 32 5.3 20 1? xQ e F&F & 8 & CAD BRAG ) hre O04 05 av Li x 10-4 aS EG yt ee Cine ) hee 95 170 280 480 i HATK Say (AN BSH ) hoe 4.0 65 10 1? 20 456 2sc 133 STATIC CHARACTERISTICS co a a Oo 4 . aS 3 n 4 2B I Ip (ma (23,4 RE Vor (V) u Xv \ 2 Vp (Vv) 3 VE Ry Zi, & eth COMMON EMITTER Ta = 25 ASAD BRERSER hep hpp- Ic 3000 Li, seh COMMON EMITTER Vorp= 6V Ta= 25C 500 300 100 a3 a5 i 3 5 10 30 50 100 2V72 Bi Iq (mA) Po - Ta A % & o py x mK & xR Xs n & te 0 40 80 120 160 200 240 ABBR Ta (C) 457 h PARAMETERS be & h PARAMETERS he & 2SC 133 \ 280733-GR h PARAMETERS - Tp ne & eth Ziv #00 COMMON EMITTER Vor=5V 100 f =270Hz = 25 30 hie (kQ) hoe (40) 10 5 hee (100) (x1o7#) oor O a1 3 10 = Xi RBH IZp (ma)- 28C733-BL h PARAMETERS Ip 1000 - Liss 500 COMMON EMITTER 300 Vor=5V f =270Hz hig (KD) \ ta= 250 100 50 30 hye (X107+) 10 re hg (X100) 1 05 001-0038 -Q1 -O3 -1 3 Diy FB 10 Ip (ma) ~30 100 458 h PARAMETERS h ER h PARAMETERS we RK 280733-GR h PARAMETERS Von 30 Ri # eH COMMON EMITTER Ig=lmA, f=270Hz , Ta=25C 10 hie (Q) hee (X100) hog (X10 47S) as hre (x107* ) as 1 3 5 10 30 650 Ib9S+ 233M Vop (Vv) 2S8C733-BL h PARAMETERS - Vop 30 Xs Fb COMMON EMITTER Ip=lmA, f=270H2 , Ta=25C hee (X100) Nog (X1040)) hig (x10KQ) hyre(xlo-+) as O38 a3 as 1 3.5 10 30 50 AV7H+- iy SMBE Vom (V)