2N5038 - ON Semiconductor

NPN Silicon Transistors

. . . fast switching speeds and high current capacity ideally suit these

parts for use in switching regulators, inverters, wide−band amplifiers

and power oscillators in industrial and commercial applications.

•High Speed − tf = 0.5 μs (Max)

•High Current − IC(max) = 30 Amps

•Low Saturation − VCE(sat) = 2.5 V (Max) @ IC = 20 Amps

wThis device is available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage

ÎÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎÎÎÎ

150

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎÎÎÎ

150

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current −Continuous

Peak (1)

ÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current − Continuous

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25_C

Derate above 25_C

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

140

0.8

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Watts

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎ

1.25

ÎÎÎÎ

_C/W

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width v 10 ms, Duty Cycle v 50%.

Figure 1. Switching Time Test Circuit

+11 V 10 Ω

−5 V

1N4933

VCC

2.5

IC = 12 AMPS

IB1 = IB2 = 1.2 AMPS

−9 V

2N5038

+30 V

PW = 20 μs

DUTY CYCLE = 1%

IC = 10 AMPS

IB1 = IB2 = 1.0 AMPS

2N5039

ON Semiconductort

March, 2006 − Rev. 11

1Publication Order Number:

2N5038/D

2N5038

20 AMPERE

NPN SILICON

POWER TRANSISTOR

90 VOLTS

140 WATTS

CASE 1−07

TO−204AA

(TO−3)

2N5038

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (2)

(IC = 200 mAdc, IB = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 V)

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEX

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

(VEB = 7 Vdc, IC = 0)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 12 Adc, VCE = 5 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

hFE

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

100

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 20 Adc, IB = 5 Adc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 20 Adc, IB = 5 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

−

ÎÎÎÎ

3.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common−Emitter Small−Signal Short−Circuit

Forward Current Transfer Ratio

(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)

ÎÎÎÎÎ

ÎÎÎ

|hfe|

ÎÎÎ

ÎÎÎÎ

ÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

RESISTIVE LOAD

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc)

ÎÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

0.5

ÎÎÎ

μs

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)

ÎÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

1.5

ÎÎÎ

μs

*Indicates JEDEC Registered Data.

(2) Pulse Test: Pulse Width v 300, μs, Duty Cycle v 2%.

100

Figure 2. Forward Bias Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1 1 10 100

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

IC, COLLECTOR CURRENT (AMPS)

0.5

0.2

2 3 5 7 20 30 50

TC = 25°C

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

Second breakdown pulse limits are valid for duty cycles

to 10%. At high case temperatures, thermal limitations may

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

2N5038

http://onsemi.com

PACKAGE DIMENSIONS

CASE 1−07

TO−204AA (TO−3)

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B−−− 1.050 −−− 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N−−− 0.830 −−− 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T−SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

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2N5038/D

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