2N5109
SILICON
NPN RF TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5109 is a
Silicon NPN Epitaxial Planar RF Transistor mounted
in a hermetically sealed package designed for high
frequency amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 3.0 V
Continuous Collector Current IC 400 mA
Continuous Base Current IB 400 mA
Power Dissipation PD 1.0 W
Power Dissipation (TC=75°C) PD 2.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICEV V
CE=35V, VBE=1.5V 5.0 mA
ICEV V
CE=15V, VBE=1.5V, TC=150°C 5.0 mA
ICEO V
CE=15V 20 μA
IEBO V
EB=3.0V 100 μA
BVCBO I
C=0.1mA 40 V
BVCER I
C=5.0mA, RBE=10Ω 40 V
BVCEO I
C=5.0mA 20 V
VCE(SAT) I
C=100mA, IB=10mA 0.5 V
hFE V
CE=15V, IC=50mA 40 210
hFE V
CE=5.0V, IC=360mA 5.0
fT V
CE=15V, IC=50mA, f=200MHz 1200 MHz
Cob V
CB=15V, IE=0, f=1.0MHz 3.5 pF
NF VCE=15V, IC=10mA, f=200MHz 3.0 dB
GPE V
CE=15V, IC=50mA, f=200MHz 11 dB
TO-39 CASE
R4 (7-June 2011)
www.centralsemi.com
2N5109
SILICON
NPN RF TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R4 (7-June 2011)
