Semiconductor Group 1 Dec-11-1996
BFT 92W
PNP Silicon RF Transistor
• For broadband amplifiers up to 2GHz
at collector currents up to 20mA
• Complementary type: BFR 92W (NPN)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFT 92W W1s Q62702-F1681 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 15 V
Collector-base voltage
V
CBO 20
Emitter-base voltage
V
EBO 2
Collector current
I
C 25 mA
Base current
I
B 3
Total power dissipation
T
S ≤ 105 °C
P
tot 200 mW
Junction temperature
T
j 150 °C
Ambient temperature
T
A- 65 ... + 150
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction - soldering point 1)
R
thJS ≤ 225 K/W
1)
T
S is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 2 Dec-11-1996
BFT 92W
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 1 mA,
I
B = 0
V
(BR)CEO 15 - - V
Collector-base cutoff current
V
CB = 10 V,
I
E = 0
I
CBO - - 100 nA
Emitter-base cutoff current
V
EB = 2 V,
I
C = 0
I
EBO - - 10 µA
DC current gain
I
C = 15 mA,
V
CE = 8 V
h
FE 15 50 - -
Semiconductor Group 3 Dec-11-1996
BFT 92W
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
C = 15 mA,
V
CE = 8 V,
f
= 500 MHz
f
T
3.5 5 - GHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 0.58 0.9 pF
Collector-emitter capacitance
V
CE = 10 V,
f
= 1 MHz
C
ce - 0.3 -
Emitter-base capacitance
V
EB = 0.5 V,
f
= 1 MHz
C
eb - 0.77 -
Noise figure
I
C = 2 mA,
V
CE = 8 V,
Z
S =
Z
Sopt
f
= 900 MHz
f
= 1.8 GHz
F
-
- 3.2
2 -
-
dB
Power gain 2)
I
C = 15 mA,
V
CE = 8 V,
Z
S =
Z
Sopt
Z
L =
Z
Lopt
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
- 8.5
14 -
-
Transducer gain
I
C = 15 mA,
V
CE = 8 V,
Z
S =
Z
L= 50 Ω
f
= 900 MHz
f
= 1.8 GHz
|
S
21e|2
-
- 6
11.5 -
-
2)
G
ma = |
S
21/
S
12| (k-(k2-1)1/2)
Semiconductor Group 4 Dec-11-1996
BFT 92W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS = 4.5354 fA
VAF = 10.983 V
NE = 1.1172 -
VAR = 47.577 V
NC = 1.206 -
RBM = 1.5939 Ω
CJE = 1.7785 fF
TF = 32.171 ps
ITF = 0.013277 mA
VJC = 1.2 V
TR = 2.0779 ns
MJS = 0-
XTI = 3-
BF = 98.533 -
IKF = 0.016123 A
BR = 10.297 -
IKR = 0.019729 A
RB = 7.9562 Ω
RE = 1.5119 Ω
VJE = 0.79082 V
XTF = 0.30227 -
PTF = 0 deg
MJC = 0.3 -
CJS = 0 fF
XTB = 0 -
FC = 0.75167 -
NF = 0.90551 -
ISE = 12.196 fA
NR = 1.2703 -
ISC = 0.024709 fA
IRB = 0.79584 mA
RC = 0.66749 Ω
MJE = 0.32167 -
VTF = 0.21451 V
CJC = 922.07 fF
XCJC = 0.3 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit: LBI = 0.57 nH
LBO = 0.4 nH
LEI = 0.43 nH
LEO = 0.5 nH
LCI = 0nH
LCO = 0.41 nH
CBE = 61 fF
CCB = 101 fF
CCE = 175 fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group 5 Dec-11-1996
BFT 92W
Total power dissipation
P
tot =
f
(
T
A*,
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax/
P
totDC =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
P
totmax/
P
totDC
D = 0
0.005
0.1
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 6 Dec-11-1996
BFT 92W
Collector-base capacitance
C
cb =
f
(
V
CB)
V
BE =
v
be = 0,
f
= 1MHz
0246810 12 14 16 V 20
V
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
pF
1.8
C
cb
Transition frequency
f
T =
f
(
I
C)
V
CE = Parameter
0 5 10 15 20 mA 30
I
C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
GHz
6.0
fT
10V
8V
5V
3V
2V
1V
0.7V
Power Gain
G
ma,
G
ms =
f
(
I
C)
f
= 0.9GHz
V
CE = Parameter
0 5 10 15 20 mA 30
I
C
5
6
7
8
9
10
11
12
13
14
dB
16
G
10V
5V
3V
2V
1V
0.7V
Power Gain
G
ma,
G
ms =
f
(
I
C)
f
= 1.8GHz
V
CE = Parameter
0 5 10 15 20 mA 30
I
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
dB
10.0
G
10V
5V
3V
2V
1V
0.7V
Semiconductor Group 7 Dec-11-1996
BFT 92W
Power Gain
G
ma,
G
ms =
f
(
V
CE):_____
|
S
21|2 =
f
(
V
CE):---------
f
= Parameter
02468V12
V
CE
0
2
4
6
8
10
12
dB
16
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
I
C=15mA
Intermodulation Intercept Point
IP
3=
f
(
I
C)
(3rd order, Output,
Z
S=
Z
L=50Ω)
V
CE = Parameter,
f
= 900MHz
0 5 10 15 20 mA 30
I
C
0
5
10
15
20
25
dBm
35
IP
3 8V
3V
2V
1V
Power Gain
G
ma,
G
ms =
f
(
f
)
V
CE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
0
5
10
15
20
25
dB
35
G
10V
2V
1V
0.7V
I
C=15mA
Power Gain |
S
21|2=
f
(
f
)
V
CE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
-5
0
5
10
15
20
dB
30
S
21
10V
2V
1V
0.7V
I
C=15mA
