2006-11-14
Page 1
SPI21N10
SPP21N10,SPB21N10 G
SIPMOS
Power-Transistor Product Summary
VDS 100 V
RDS(on) 80 m
ID21 A
Feature
Pb-free, RoHS compliant
N-Channel, Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
PG-TO263-3-2 PG-TO220-3-1PG-TO262-3-1
Marking
21N10
21N10
21N10
Type Package
SPP21N10 PG-TO220-3-1
SPB21N10 PG-TO263-3-2
SPI21N10 PG-TO262-3-1
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
TC=100°C
ID
21
15.0
A
Pulsed drain current
TC=25°C
ID puls 84
Avalanche energy, single pulse
ID=21 A , VDD=25V, RGS=25
EAS 130 mJ
Reverse diode dv/dt
IS=21A, VDS=80V, di/dt=200A/µs, Tjmax=175°C
dv/dt6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25°C
Ptot 90 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
2006-11-14
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SPI21N10
SPP21N10,SPB21N10 G
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 1.7 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area F)
RthJA
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 100 - - V
Gate threshold voltage, VGS = VDS
ID = 44 µA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS - 1 100 nA
Drain-source on-state resistance
VGS=10V, ID=15.0A
RDS(on) - 65 80 m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2006-11-14
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SPI21N10
SPP21N10,SPB21N10 G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS
2*ID*RDS(on)max ,
ID=15.0A
6.5 12.4 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 650 865 pF
Output capacitance Coss - 140 186
Reverse transfer capacitance Crss - 80 120
Turn-on delay time td(on) VDD=50V, VGS=10V,
ID=21A, RG=13
- 10 15 ns
Rise time tr- 56 84
Turn-off delay time td(off) - 37 55
Fall time tf- 23 35
Gate Charge Characteristics
Gate to source charge Qgs VDD=80V, ID=21A - 3.9 5.2 nC
Gate to drain charge Qgd - 15.5 23.3
Gate charge total QgVDD=80V, ID=21A,
VGS=0 to 10V
- 28.9 38.4
Gate plateau voltage V(plateau) VDD=80V, ID=21A - 6.2 - V
Reverse Diode
Inverse diode continuous
forward current ISTC=25°C - - 21 A
Inverse diode direct current,
pulsed ISM - - 84
Inverse diode forward voltage VSD VGS=0V, IF=21A - 0.94 1.25 V
Reverse recovery time trr VR=50V, IF=lS,
diF/dt=100A/µs
- 65 81.5 ns
Reverse recovery charge Qrr - 153 192 nC
2006-11-14
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SPI21N10
SPP21N10,SPB21N10 G
1 Power dissipation
Ptot = f (TC)
0 20 40 60 80 100 120 140 160°C 190
TC
0
10
20
30
40
50
60
70
80
W
100 SPP21N10
P
tot
2 Drain current
ID = f (TC)
parameter: VGS
10 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
2
4
6
8
10
12
14
16
18
20
A
24 SPP21N10
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 -1 10 0 10 1 10 2 10 3
V
VDS
-1
10
0
10
1
10
2
10
A
SPP21N10
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
10 µs
tp = 6.8µs
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP21N10
ZthJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2006-11-14
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SPI21N10
SPP21N10,SPB21N10 G
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
0 5 10 V20
VDS
0
10
20
30
A
50
ID
a
b
c
d
eVGS[V]=
a= 5.6
b= 6.0
c= 7.0
d= 8.0
e= 10.0
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 5 10 15 20 25 30 35 40 A50
ID
0
20
40
60
80
100
120
140
160
180
200
220
m
260
RDS(on)
abcd
e
VGS[V]=
a= 5.6
b= 6.0
c= 7.0
d= 8.0
e= 10.0
7 Typ. transfer characteristics
ID= f ( VGS ); VDS
2 x ID x RDS(on)max
parameter: tp = 80 µs
23456V8
VGS
0
5
10
15
20
A
30
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 4 8 12 16 A24
ID
0
1
2
3
4
5
6
7
8
9
10
11
12
S
14
g
fs
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SPI21N10
SPP21N10,SPB21N10 G
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 15.0 A, VGS = 10 V
-60 -20 20 60 100 140 °C 200
Tj
0
40
80
120
160
200
240
280
m
340 SPP21N10
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-65 -35 -5 25 55 85 115 °C 175
Tj
1.5
2
2.5
3
V
4
VGS(th)
ID=0.25mA
ID=44µA
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 25 30 V40
VDS
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPP21N10
I
F
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
2006-11-14
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SPI21N10
SPP21N10,SPB21N10 G
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 21 A , VDD = 25 V, RGS = 25
25 45 65 85 105 125 145 °C 185
Tj
0
10
20
30
40
50
60
70
80
90
100
110
120
mJ
140
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 21 A pulsed
0 5 10 15 20 25 30 35 40 nC 50
QGate
0
2
4
6
8
10
12
V
16 SPP21N10
V
GS
0,8 VDS max
DS max
V
0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 140 °C 200
Tj
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120 SPP21N10
V
(BR)DSS
2006-11-14
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SPI21N10
SPP21N10,SPB21N10 G
Published by
Infineon Technologies AG,
D-81726 München, Germany
© Infineon Technologies AG 2006
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
