SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4392
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
Issue
Page 2 of
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
V(BR)GSS Gate – Source
Breakdown Voltage VDS = 0 IG = 1.0µA -40
V
VGS(off) Gate – Source
Cut-off Voltage VDS = 20V ID = 1.0nA -2 -5
IDSS
(1)
Zero Gate Voltage
Drain Current VDS = 20V VGS = 0 25 75 mA
IGSS Gate Reverse Current
VDS = 0 VGS = -20V -100 pA
TA = 150°C -200 nA
ID(off) Drain Cut-off Current
VDS = 20V VGS = -7V 100 pA
TA = 150°C 200 nA
VDS(on) Drain – Source
On Voltage VGS = 0 ID = 6mA 0.4 V
RDS(on) Drain – Source
On Resistance VGS = 0 ID = 1.0mA 60 Ω
DYNAMIC CHARACTERISTICS
Ciss Common – Source
Input Capacitance
VDS = 20V
f = 1.0MHz
VGS = 0
14
pF
Crss Common – Source Reverse
Transfer Capacitance
VDS = 0
f = 1.0MHz
VGS = -7V
3.5
RDS(on) Drain – Source
On Resistance
VGS = 0
f = 1.0KHz ID = 0 60 Ω
tr Rise Time
VDD = 10V
VGS = 0V
VGSX = -7V
ID(on) = 6mA
5
ns
td(on) Turn-on Delay Time 15
tf Fall Time 20
td(off) Turn-off Delay Time 35
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%