Document: SCD 27217
SiBar Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 1 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVAxxxNSA-L Series
SiBar thyristor surge protection devices help protect
sensitive telecommunication equipment from the
hazards caused by lightning, power contact, and powe
r
induction. These devices have a high electrical surge
capability to help protect against transient faults and a
high off-state impedance, rendering them virtually
transparent during normal system operation.
SiBar thyristor surge protectors assist designers to meet
telecommunication and computer telephony equipment
requirements and industry specifications.
Benefits:
• Helps provide protection for sensitive telecom
electronic equipment
Low leakage current
Low power dissipation
Fast, reliable operation
• No wear-out mechanisms
Assists designers to meet worldwide telecom
standards
Helps reduce warranty and service costs
Easy installation
Helps improve power efficiency of equipment
Features:
RoHS compliant
Bidirectional crowbar transient voltage protection
Voltage range: 170V – 275V with improved
Vdrm/Vbo range
High off-state impedance
Low on-state voltage
High surge capability
Short-circuit failure mode
• Surface-mount technology
DO-214AC SMA package
• 10 x 1000 μs 50A surge rating
Helps equipment comply with TIA-968,
Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45
Applications:
Modems • Set top boxes
Fax machines • POS systems
Phones, answering machines • Analog and digital linecards (xDSL, T1/E1...)
PBX systems • Other customer premise and central office network equipment requiring protection
Document: SCD 27217
SiBar Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 2 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVAxxxNSA-L Series
Table SB1 - Electrical Characteristics
Part Number VDM Max. (V) VBO Max. (V) IH Min. (mA) VT Max. (V) C1 (Typ)
50VDC Bias
C2 (Typ)
2VDC Bias
Off-State
Current
VD2=VDM
(μA)
TVA170NSA-L 170 220 150 4 20 39 5
TVA220NSA-L 220 300 150 4 17 33 5
TVA275NSA-L 275 350 150 4 16 31 5
Notes: All electrical characteristics are measured at 25°C.
V
DM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA.
V
BO measured at 100V/µs.
C1 measured at 1 MHz with a 50 VDC bias.
C2 measured at 1MHz with a 2VDC bias.
Table SB2 – Surge Current Rating
TIA-968 Telcordia GR-1089* IEC61000-4-5 ITU K.20/21/45*
Type A Type B
Part Number Ipp(A)
5 x 320 µs Ipp(A)
10 x 560 µs
pp (A)
10 x 160 µs Ipp (A)
10 x 1000 µs
Ipp (A)
2 x 10 µs Ipp (A)
8 x 20 µs
IPP (A)
5 x 310 μs
(VOC: 10 x 700μs)
ITSM
Min.
(A)
di/dt
(A/µs)
dV/dt
(V/µs)
TVAxxxNSA-L 90 70 100 50 150 150 90 22 500 2000
Notes: *Lightning current wave forms for applicable industry specification.
I
TSM, peak on-state surge current is measured at 60 Hz, one cycle.
di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF).
dV/dt: critical rate-of-rise of off-sta
g
e volta
g
e
(
linear wave form
,
V
D
= rated V
BO
,
T
j
= 25°C
Document: SCD 27217
SiBar Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 3 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVAxxxNSA-L Series
Table SB4 – Physical Characteristics and Environmental Specifications
Lead material Matte tin finish (-L devices)
Encapsulating material Epoxy, meets UL94V-0 requirements
Solderability per MIL-STD-750, Method 2026
Solder heat withstand per MIL-STD-750, Method 2031
Solvent resistance per MIL-STD-750, Method 1022
Mechanical shock per MIL-STD-750, Method 2016
Vibration per MIL-STD-750, Method 2056
Storage temperature (°C) -55 to 150
Operating temperature (°C) -40 to 125
Junction temperature (°C) 175
Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260
Table SB3 – Dimensions in Millimeters
A B C D
Dimension Min. Max. Min. Max. Min. Max. Min. Max.
4.06 4.57 2.25 2.92 1.90 2.41 1.25 1.65
TVAxxxNSA-L (0.160) (0.180) (0.089) (0.115) (0.075) (0.095) (0.049) (0.065)
H J K P S
Dimension Min. Max. Min. Max. Min. Max. Ref Min Max.
0.051 0.200 0.150 0.41 0.76 1.52 0.051 4.80 5.59
TVAxxxNSA-L (0.002) (0.008) (0.006) (0.016) (0.030) (0.060) (0.0020) (0.189) (0.220)
Notes: *D dimension is measured within dimension P.
TVA series devices use industry standard SMA package type.
All devices are bidirectional and may be oriented in either direction for installation
Table SB5 – Reliability Tests
Test Conditions Duration
High temperature, reverse bias +100°C, 50VDC bias 1000 hours
High humidity, high temperature, reverse bias 85% RH, +85°C, 50VDC bias 1000 hours
High temperature storage life +150°C 1000 hours
Temperature cycling -65°C to +150°C, 15 minute dwell 1000 cycles
Autoclave 100% RH, +121°C, 15 PSI 96 hours
Document: SCD 27217
SiBar Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 4 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVAxxxNSA-L Series
Document: SCD 27217
SiBar Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 5 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVAxxxNSA-L Series
308 Constitution Drive, MS R21/2A Tel (800) 227-7040 www.circuitproection.com
Menlo Park, CA USA 94025-1164 (650) 361-6900 www.circuitprotection.com.hk (Chinese)
Fax (650) 361-2508 www.circuitprotection.jp (Japanese)
Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks.
All other trademarks and copyrights are property of their respective owners.
Table SB6 – Packaging and Marking Information
Recommended Pad Layout (millimeters/inchs)
Part
Description
Tape and
Reel
Quantity
Standard
Package
Part
Marking
Dimension
A (Nom.)
Dimension
B (Nom.)
Dimension
C (Nom.)
Agency
Recognition*
TVA170NSA-L 5,000 20,000 17NA 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) **
TVA220NSA-L 5,000 20,000 22NA 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) **
TVA275NSA-L 5,000 20,000 27NA 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) **
* UL 497B, File # E179610
**UL Pending