MJD44H11 NPN Epitaxial Silicon Transistor * * * * * * * General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1 D-PAK 1.Base 1 2.Collector I-PAK 3.Emitter Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units 80 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector-Current (Pulse) 16 A TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Max. Units Thermal Characteristics Ta = 25C unless otherwise noted Symbol Parameter Tc = 25C 20 Ta = 25C 1.75 PD Total Device Dissipation RJC Thermal Resistance, Junction to Case 6.25 C/W RJA Thermal Resistance, Junction to Ambient 71.4 C/W (c) 2009 Fairchild Semiconductor Corporation MJD44H11 Rev. B1 W www.fairchildsemi.com 1 MJD44H11 -- NPN Epitaxial Silicon Transistor March 2009 Symbol Parameter Test Condition Min. Typ. Max. VCEO(sus) *Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 ICEO Collector Cut-off Current VCE = 80V, IB = 0 10 A IEBO Emitter Cut-off Current VBE = 5V, IC = 0 50 A hFE *DC Current Gain VCE = 1V, IC = 2A VCE = 1V, IC = 4A VCE(sat) *Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A 1 V VBE(on) *Base-Emitter On Voltage IC = 8A, IB = 0.8A 1.5 V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 50 MHz Cob Output Capacitance VCB =10V, f = 1MHz 130 pF tON Turn On Time 300 ns 500 ns 140 ns tSTG Storage Time tF Fall Time IC = 5A IB1 = - IB2 = 0.5A 80 Units V 60 40 * Pulse Test: PW300s, Duty Cycle2% (c) 2009 Fairchild Semiconductor Corporation MJD44H11 Rev. B1 www.fairchildsemi.com 2 MJD44H11 -- NPN Epitaxial Silicon Transistor Electrical Characteristics Ta = 25C unless otherwise noted 100 1000 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = 1V 100 10 ICP(max) 10 10 IC(max) 1 50 1m s 5m DC s 0 0 s s 0.1 0.01 1 0.01 0.1 1 1 10 IC[A], COLLECTOR CURRENT 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC current Gain Figure 2. Safe Operating Area PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating (c) 2009 Fairchild Semiconductor Corporation MJD44H11 Rev. B1 www.fairchildsemi.com 3 MJD44H11 -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics MJD44H11 -- NPN Epitaxial Silicon Transistor Mechanical Dimensions 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (3.05) (2XR0.25) (0.10) 2.70 0.20 6.10 0.20 9.50 0.30 0.50 MIN0.55 2.30TYP [2.300.20] 6.60 0.20 (5.34) (5.04) (1.50) 0.10 (1.00) 0.10 2.30 (0.90) 0.76 0.91 0.10 (0.50) 9.50 0.30 (4.34) 6.10 0.20 0.30 (0.70) 2.30TYP [2.300.20] 5.34 0.89 0.10 MAX0.96 0.20 2.70 0.20 0.80 0.20 0.60 0.20 (0.50) 6.60 0.70 0.20 D-PAK 0.76 0.10 Dimensions in Millimeters (c) 2009 Fairchild Semiconductor Corporation MJD44H11 Rev. B1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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