MJD44H11 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. B1 1
March 2009
MJD44H11
NPN Epitaxial Silicon Transistor
• General Purpose Power and Switching Such as Output or Driver Stages in Applications
• D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Str aight Lead (I-PAK, "- I" Suffix)
• Electrically Similar to Popular MJE44H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP Collector-Current (Pulse) 16 A
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Max. Units
PDTotal Device Dissipation Tc = 25°C
Ta = 25°C
20
1.75 W
RθJC Thermal Resistance, Junction to Case 6.25 °C/W
RθJA Thermal Resistance, Junction to Ambient 71.4 °C/W
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
MJD44H11 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. B1 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 80 V
ICEO Collector Cut-off Current VCE = 80V, IB = 0 10 μA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 50 μA
hFE *DC Current Gain VCE = 1V, IC = 2A
VCE = 1V, IC = 4A 60
40
VCE(sat) *Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A 1 V
VBE(on) *Base-Emitter On Voltage IC = 8A, IB = 0.8A 1.5 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 50 MHz
Cob Output Capacitance VCB =10V, f = 1MHz 130 pF
tON Turn On Time IC = 5A
IB1 = - IB2 = 0.5A
300 ns
tSTG Storage Time 500 ns
tF Fall Time 140 ns
MJD44H11 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. B1 3
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
5ms
100
μ
s
500
μ
s
1ms
DC
ICP(max)
IC(max)
IC[A], COLLECTO R CURRE NT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATI ON
TC[oC], CASE TEMPERATURE
MJD44H11 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. B1 4
Mechanical Dimensions
6.60 ±0.20
2.30 ±0.1
0
0.50 ±0.1
0
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.1
0
1.02 ±0.2
0
2.30 ±0.2
0
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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The datasheet is for reference information only. Rev. I39
