PAGE . 1
March 1,2011-REV.03
BC807 SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE 45 Volts 330 mWatts
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current IC = 500mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
• Device Marking : BC807-16 : 7A
BC807-25 : 7B
BC807-40 : 7C
POWER
MECHANICAL DATA
THERMAL CHARACTERISTICS
Note 1 : Transistor mounted on FR-5 board minimum pad mounting conditions.
PARAMETER SYMBOL Value UNIT
Collector-Emitter Voltage V
CEO
-45 V
Collector-Base Voltage V
CBO
-50 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current - C ontinuous I
C
-500 mA
Total Power Dissipation (Note 1) P
TOT
330 mW
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150
o
C
PARAMETER SYMBOL Value UNIT
Thermal Resistance Junction to Ambient (Note 1) R
θJA
375
o
C/W
Thermal Resistance Junction to Lead R
θJL
220
o
C/W
SOT-23
Unit inch(mm)：
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.103(2.60)
0.086(2.20)
0.008(0.20)
0.003(0.08)
PAGE . 2
March 1,2011-REV.03
BC807 SERIES
ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes)
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage (I
C
=-10mA, I
B
=0) V
(BR)
CEO -45 - - V
Collector-Base Breakdown Voltage (V
EB
=0V, I
C
=-10μA) V
(BR)
CBO -50 - - V
Emitter-Base Breakdown Voltage (I
E
=-1μA,Ic=0) V
(BR)
EBO -5.0 - - V
Emitter-Base Cutoff Current (V
EB
=-5V) I
EBO
---100nA
Collector-Base Cutoff Current (V
CB
=-20V,I
E
=0) T
J
=25
O
C
T
J
=150
O
C
I
CBO
-
--
-100
-5.0
nA
μA
DC Current Gain
(Ic=-100mA,V
CE
=-1V)
(Ic=-500mA,V
CE
=-1V)
BC807-16
BC807-25
BC807-40 h
FE
100
160
250
40
-
-
-
-
250
400
600
-
-
Collector-Emitter Saturation Voltage (Ic=-500mA ,I
B
=-50mA) V
CE(SAT)
---0.7V
Base-Emitte Voltage (Ic=-500mA,V
CE
=-1.0V) V
BE(ON)
---1.2V
Collector-Base Capacitance (V
CB
=-10v,I
E
=0,f=1MHz) C
CBO
-7.0- pF
Current Gain-Bandwidth Product (Ic=-10mA,V
CE
=-5V,f=100MHz) f
T
100 - - MHz
Fig Typical Capacitances.4
Fig BC Typical h. 3 807-40
FE
.vs I
C
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current I,C()mA
hFE
TC
J
=25
o
TC
J
=150
o
TC
J
=100
o
VCE =1V
1
10
100
0.1 1 10 100
Reve rs e Voltage V,R()V
Capacitance C p,(
J
F)
CIB ()EB
COB ()EB
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current I,C()mA
hFE
TC
J
=25
O
TC
J
= 150
O
TC
J
= 100
O
VCE =1V
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current I,
C
()mA
hFE
V
CE
=1V
Fig BC Typical h.2. 807-25
FE
.vs I
C
Fig BC Typical h.1. 807-16
FE
.vs I
C
TC
J
= 150
O
TC
J
=25
O
TC
J
= 100
O
PAGE . 3
March 1,2011-REV.03
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
BC807 SERIES
SOT-23
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.078
(2.00)
0.035 MIN.
(0.90) MIN.
0.043
(1.10)
0.106
(2.70)
Unit inch(mm)：