MMBTA56WT1G - ON Semiconductor

 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 3

1Publication Order Number:

MMBTA56WT1/D

MMBTA56WT1G,

SMMBTA56WT1G

Driver Transistor

PNP Silicon

Features

Moisture Sensitivity Level: 1

ESD Rating:

Human Body Model − 4kV

Machine Model − 400 V

AEC−Q101 Qualified and PPAP Capable

S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −80 Vdc

Collector−Base Voltage VCBO −80 Vdc

Emitter−Base Voltage VEBO −4.0 Vdc

Collector Current − Continuous IC−500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

TA = 25C

PD150

Thermal Resistance, Junction to Ambient RqJA 833 C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

COLLECTOR

BASE

EMITTER

http://onsemi.com

MMBTA56WT1G SC−70

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC−70 (SOT−323)

CASE 419

STYLE 3

MARKING DIAGRAM

FM = Device Code

M = Date Code*

G= Pb−Free Package

FM M G

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SMMBTA56WT1G SC−70

(Pb−Free)

3,000 /

Tape & Reel

MMBTA56WT1G, SMMBTA56WT1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO −80 −

Vdc

Emitter−Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

V(BR)EBO −4.0 −

Vdc

Collector Cutoff Current

(VCE = −60 Vdc, IB = 0)

ICES − −0.1

mAdc

Collector Cutoff Current

(VCB = −60 Vdc, IE = 0)

(VCB = −80 Vdc, IE = 0)

ICBO −

−

−0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

hFE 100

100

−

Collector−Emitter Saturation Voltage

(IC = −100 mAdc, IB = −10 mAdc)

VCE(sat) − −0.25

Vdc

Base−Emitter On Voltage

(IC = −100 mAdc, VCE = −1.0 Vdc)

VBE(on) − −1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz)

fT50 −

MHz

1. Pulse Test: Pulse Width  300 ms, Duty Cycle  2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Switching Time Test Circuits

OUTPUT

TURN-ON TIME

-1.0 V VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

+10 V

5.0 ms

OUTPUT

TURN-OFF TIME

+VBB VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

5.0 ms

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

MMBTA56WT1G, SMMBTA56WT1G

http://onsemi.com

Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance

Figure 4. Switching Time

IC, COLLECTOR CURRENT (mA)

-100 -200-10

200

100

VR, REVERSE VOLTAGE (VOLTS)

-1.0 -100-0.1

100

-2.0

VCE = -2.0 V

TJ = 25C

fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MH

C, CAPACITANCE (pF)

-2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70

7.0

5.0 -0.2 -0.5 -5.0 -10 -20 -50

TJ = 25C

Cibo

Cobo

IC, COLLECTOR CURRENT (mA)

-10-5.0

500

200

100

-100

t, TIME (ns)

-50 -200 -500

1.0 k

300

700

-7.0 -300-70-20 -30

VCC = -40 V

IC/IB = 10

IB1 = IB2

TJ = 25C

td @ VBE(off) = -0.5 V

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

-10 -50-1.0

-500

-200

-100

-50

-20

-10

-20-2.0 -5.0

-1.0 k

IC, COLLECTOR CURRENT (mA)

1.0 ms

1.0 s

TA = 25C

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

100 ms

TC = 25C

-3.0 -7.0 -30 -100-70

-30

-70

-300

-700

Figure 6. DC Current Gain

-2.0 -500-0.5

IC, COLLECTOR CURRENT (mA)

400

200

100

-10

, DC CURRENT GAIN

TJ = 125C

-1.0 -5.0

VCE = -1.0 V

-20 -100-50 -200

hFE

25C

-55C

Figure 7. “ON” Voltages

V, VOLTAGE (VOLTS)

-10 -500-1.0

IC, COLLECTOR CURRENT (mA)

-1.0

-0.8

-0.6

-0.4

-0.2

-100

TJ = 25C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = -1.0 V

-0.5 -2.0 -5.0 -200-20 -50

MMBTA56WT1G, SMMBTA56WT1G

http://onsemi.com

Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

RVB , TEMPERATURE COEFFICIENT (mV/ C)

q

, COLLECTOR-EMITTER VOLTAGE (VOLTS

)

VCE

-100 -500-0.5

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-10

RqVB for VBE

-1.0 -2.0 -5.0 -20 -50 -200

-0.1 -10-0.05

-1.0

-0.8

-0.6

-0.4

-0.2

-1.0

TJ = 25C

-50

IC =

-100 mA

IC =

-50 mA

IC =

-250 mA

IC =

-500 mA

IC =

-10 mA

-20-2.0 -5.0-0.2 -0.5

MMBTA56WT1G, SMMBTA56WT1G

http://onsemi.com

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under

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MMBTA56WT1/D

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