PD - 90885F IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662 (R) TM RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on) 0.080 0.080 ID -22A -22A QPL Part Number JANSR2N7422U JANSF2N7422U Inter national Rectifier's RADHard HEXFET TM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD-1 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range PCKG Mounting Surface Temp. Weight Units -22 -14 -88 150 1.2 20 500 -22 15 -23 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 ( for 5s) 2.6 (typical) g For footnotes refer to the last page www.irf.com 1 04/07/04 IRHN9150, JANSR2N7422U Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 Typ Max Units -- -- V VGS = 0V, ID =-1.0mA -- -0.093 -- V/C Reference to 25C, ID = -1.0mA VGS(th) g fs IDSS Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -100 100 200 35 48 40 170 190 190 -- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 4300 1100 310 -- -- -- RDS(on) -- -- -2.0 11 -- -- -- 0.080 -- 0.085 -- -4.0 -- -- -- -25 -- -250 V S( ) BVDSS BVDSS/TJ A nA nC ns nH pF Test Conditions VGS = -12V, ID = -14A VGS = -12V, ID = -22A VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -14A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = -50V VDD = -50V, ID = -22A, VGS =-12V, RG = 2.35 Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) -- -- -- -- -22 -88 A VSD t rr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- -3.0 300 1.5 V nS C t on Forward Turn-On Time Test Conditions Tj = 25C, IS = -22A, VGS = 0V Tj = 25C, IF = -22A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max -- -- -- 6.6 0.83 -- Units C/W Test Conditions soldered to a 1"sq. copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHN9150, JANSR2N7422U International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-1) Diode Forward Voltage Test Conditions 300K Rads (Si)2 Units Min Max -100 -2.0 -- -- -- -- -- -4.0 -100 100 -25 0.081 -100 -2.0 -- -- -- -- -- -5.0 -100 100 -25 0.081 A VGS = 0V, ID = -1.0mA VGS = VDS, I D = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-14A -- 0.080 -- 0.080 VGS = -12V, ID =-14A -- -3.0 -- - 3.0 V VGS = 0V, IS = -22A V nA 1. Part number IRHN9150 (JANSR2N7422U) 2. Part numbers IRHN93150 (JANSF2N7422U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area VD S(V) Ion LE T MeV/(mg/cm)) Energy (MeV) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Cu 28 285 43 -100 -100 -100 -70 -60 Br 36.8 305 39 -100 -100 -70 -50 -40 I 59.9 345 32.8 -60 -- -- -- -- -120 -100 VDS -80 Cu Br I -60 -40 -20 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHN9150, JANSR2N7422U 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) -5.0V 20s PULSE WIDTH T = 25 C J 10 1 -5.0V 10 1 100 - I D, TJ = 150 C V DS = -50V 20s PULSE WIDTH 9 - VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 R DS(on) , Drain-to-Source On Resistance (Normalized) Drain-to-Source Current (A) TJ = 25 C 8 10 100 Fig 2. Typical Output Characteristics 3.0 7 -VDS , Drain-to-Source Voltage (V) 100 6 J 10 Fig 1. Typical Output Characteristics 10 20s PULSE WIDTH T = 150 C -VDS , Drain-to-Source Voltage (V) 5 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -22A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs.Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6000 Ciss 5000 4000 3000 Coss 2000 C rss 1000 20 -VGS, Gate-to-Source Voltage (V) 7000 C, Capacitance (pF) IRHN9150, JANSR2N7422U ID = -22A VDS = -80V VDS = -50V VDS = -20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 40 80 120 160 200 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY R -II D , Drain Current (A) -ISD , Reverse Drain Current (A) DS(on) TJ = 150 C 10 TJ = 25 C V GS = 0 V 1 0.0 1.0 2.0 3.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 4.0 100 100us 1ms 10 10ms 1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHN9150, JANSR2N7422U Pre-Irradiation 24 RD VDS VGS 20 D.U.T. RG - -I D , Drain Current (A) + V DD 16 VGS Pulse Width 1 s Duty Factor 0.1 % 12 8 Fig 10a. Switching Time Test Circuit td(on) 4 tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. CaseTemperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.01 0.001 0.00001 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHN9150, JANSR2N7422U L VDS tp VD D A IA S D R IV E R 0 .0 1 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG -2 V V0GS 1200 TOP 1000 BOTTOM ID -9.8A -14A -22A 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG -12V 12V .2F .3F -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHN9150, JANSR2N7422U Pre-Irradiation Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L= 2.1mH Peak IL = -22A, VGS = -12V ISD -22A, di/dt -450A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2004 8 www.irf.com