Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -22
ID @ VGS = -12V, T C = 100°C Continuous Drain Current -14
IDM Pulsed Drain Current ➀-88
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁500 mJ
IAR A valanche Current ➀-22 A
EAR Repetitive Avalanche Energy ➀15 mJ
dv/dt Peak Diode Recovery dv/dt ➂-23 V/ns
TJOperating Junction -55 to 150
TSTG Storage T emperature Range
PCKG Mounting Surface Temp. 300 ( for 5s)
Weight 2.6 (typical) g
PD - 90885F
Pre-Irradiation
International Rectifier’s RADHard HEXFETTM
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the
well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
oC
A
RADIATION HARDENED
JANSR2N7422U
POWER MOSFET 100V, P-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/662
RAD Hard
™
HEXFET
®
TECHNOLOGY
04/07/04
www.irf.com 1
SMD-1
Product Summary
Part Number Radiation Level RDS(on) IDQPL Part Number
IRHN9150 100K Rads (Si) 0.080Ω-22A JANSR2N7422U
IRHN93150 300K Rads (Si) 0.080Ω-22A JANSF2N7422U
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow T otal Gate Charge
nProton Tolerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nCeramic Package
nLight Weight
For footnotes refer to the last page
IRHN9150
IRHN9150, JANSR2N7422U Pre-Irradiation
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown V oltage -100 — — V VGS = 0V, ID =-1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.093 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.080 VGS = -12V, ID = -14A➃
Resistance — — 0.085 Ω VGS = -12V, ID = -22A➃
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 11 — — S ( ) V
DS >-15V, IDS = -14A ➃
IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V ,VGS=0V
— — -250 VDS = -80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 200 VGS =-12V, ID = -22A
Qgs Gate-to-Source Charge — — 35 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 48
td(on) Turn-On Delay Time — — 40 VDD = -50V, ID = -22A,
trRise Time — — 170 VGS =-12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 190
tfFall Time — — 190
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 4300 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 1100 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 310 —
nA
Ω
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.83
RthJ-PCB Junction-to-PC board — 6.6 — soldered to a 1”sq. copper-clad board
°C/W
Measured from the center of
drain pad to center of source pad
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -22
ISM Pulse Source Current (Body Diode) ➀— — -88
VSD Diode Forward V oltage — — -3.0 V Tj = 25°C, IS = -22A, VGS = 0V ➃
trr Reverse Recovery Time — — 300 nS Tj = 25°C, IF = -22A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 1.5 µ C VDD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
www.irf.com 3
Pre-Irradiation IRHN9150, JANSR2N7422U
T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter 100K Rads(Si)1 300K Rads (Si)2
Units
T est Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS = -20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V
IDSS Zero Gate Voltage Drain Current — -25 — -25 µA VDS=-80V, VGS =0V
RDS(on) Static Drain-to-Source ➃ — 0.081 — 0.081 Ω VGS = -12V, ID =-14A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃ — 0.080 — 0.080 Ω VGS = -12V, ID =-14A
On-State Resistance (SMD-1)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHN9150 (JANSR2N7422U)
2. Part numbers IRHN93150 (JANSF2N7422U)
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
T able 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
VSD Diode Forward Voltage ➃ — -3.0 — - 3.0 V VGS = 0V, IS = -22A
-120
-100
-80
-60
-40
-20
00 5 10 15 20
VGS
VDS
Cu
Br
I
noI TEL ))²mc/gm(/VeM ygrenE )VeM( egnaR )mµ( )V(SDV
V0=SGV@V5=SGV@V01=SGV@V51=SGV@V02=SGV@
uC8258234001-001-001-07-06-
rB8.6350393001-001-07-05-04-
I9.955438.2306- ————
IRHN9150, JANSR2N7422U Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
5678910
V = -50V
20
µ
s PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
10
100
1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
10
100
1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-12V
-22A
-
-
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Pre-Irradiation IRHN9150, JANSR2N7422U
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
1000
2000
3000
4000
5000
6000
7000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-22A
V =-20V
DS
V =-50V
DS
V =-80V
DS
1
10
100
0.0 1.0 2.0 3.0 4.0
-V ,Source-to-Drain Volta
g
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS
(
on
)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Volta
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRHN9150, JANSR2N7422U Pre-Irradiation
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150
0
4
8
12
16
20
24
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VGS
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Pre-Irradiation IRHN9150, JANSR2N7422U
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
-12V
Fig 13b. Gate Charge Test Circuit
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
25 50 75 100 125 150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-9.8A
-14A
-22A
VGS
IRHN9150, JANSR2N7422U Pre-Irradiation
8www.irf.com
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -25V, starting TJ = 25°C , L= 2.1mH
Peak IL = -22A, VGS = -12V
➂ ISD ≤ -22A, di/dt ≤ -450A/µs,
VDD ≤ -100V, TJ ≤ 150°C
Foot Notes:
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2004