LITE-ON SEMICONDUCTOR MBR1030CT thru 1060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES TO-220AB Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications B L M C D A K E PIN 1 2 3 F G I J MECHANICAL DATA Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) N H H DIM. A B C D TO-220AB MAX. MIN. 14.22 15.88 9.65 10.67 PIN 2 CASE PIN 3 3.43 E 8.26 6.86 9.28 F 12.70 6.35 14.73 2.29 0.51 0.30 3.53 3.56 2.79 1.14 0.64 4.09 4.83 G H I J K L M PIN 1 2.54 5.84 1.14 1.40 2.92 2.03 N All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward RectifiedCurrent at TC=105 C (See Fig.1) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load VRRM VRMS VDC Voltage Rate of Change (Rated VR) dv/dt Maximum Forward Voltage, (Note 1) @IF=5A TJ =125 C @IF=5A TJ =25 C @IF=10A TJ =125 C Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =125 C Typical Junction Capacitance, per element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range MBR 1030CT 30 21 30 MBR 1035CT 35 24.5 35 MBR 1040CT 40 28 40 MBR 1045CT 45 31.5 45 MBR 1050CT 50 35 50 MBR 1060CT 60 42 60 UNIT V V V I(AV) 10 A IFSM 125 A VF R0JC TJ TSTG NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 0.65 0.80 0.90 0.1 15 IR CJ V/us 10000 0.57 0.70 0.84 170 mA 220 3.0 -55 to +150 -55 to +175 V pF C/W C C REV. 1, Aug-2007, KTHC12 RATING AND CHARACTERISTIC CURVES MBR1030CT thru MBR1060CT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 16 12 8 4 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 175 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 TJ = 125 C 1.0 0.1 0.01 TJ = 25 C 0.001 MBR1030CT ~ MBR1045CT 10 MBR1050CT ~ MBR1060CT 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 MBR1030CT ~ MBR1045CT 100 MBR1050CT ~ MBR1060CT TJ = 25 C, f= 1MHz 10 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0