- For switching, AF driver and amplifer applications
- Complementary NPN type available (BC817)
- Case: SOT- 23, Molded plastic
- Terminal: Solderable per MIL-STD-202, method 208
- Case material: Molded plastic, UL flammability
classification rating 94V-0
- Moisture sensitivity: Level 1 per J-STD-020C
- Lead free plating
SOT-23
- Weight: 0.008grams (approximately)
SYMBOL UNIT
P
D
W
I
C
A
T
J
°C
T
STG
°C
SYMBOL UNIT
Collector-Base Breakdown Voltage I
C
= -10 μ
I
E
= 0 V
CBO
V
Collector-Emitter Breakdown Voltage I
C
= -10 m
I
B
= 0 V
CEO
V
I
E
= -1 μAI
C
= 0 V
EBO
V
CB
= -45
I
E
= 0 μA
CB
= -40
I
B
= 0 μA
Emitter Cut-off Current V
EB
= -4 V I
C
= 0 I
EBO
μA
I
B
= 50 mA V
CE(sat)
V
I
B
= 50 mA V
BE(sat)
V
Transition Frequency V
CE
= -5 V I
C
= -10 m
f = 50MHz f
T
MHz
Document Number: DS_S1404007
Taiwan Semiconductor
VALUE
Small Signal Product
0.3 Watts, PNP Plastic-Encasulate Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
BC807-16/-25/-40
MECHANICAL DATA
FEATURES
- Ideally suited for automatic insertion
- Epitaxial planar die construction
PARAMETER
250
DC Current Gain
807-16
807-25
807-40
-0.5
-55 to + 150
Power Dissipation
Collector Current - Continuous
Storage Temperature Range
0.3
PARAMETER
100
160 400
250 600
I
CBO
-0.1
-0.2
Version: F14
Collector Cut-off Current
Emitter-Base Breakdown Voltage -5
V
CE
= -1 V I
C
= -100 mA
VALUE
h
FE(1)
Collector-Emitter Saturation Voltage at I
C
= -500mA
-0.1
-0.7
80
Junction Temperature 150
Base-Emitter Saturation Voltage at I
C
= -500 mA -1.2
-50
-45