MIL-S-19500/1 43B(EL) mm ever AL 22 JUNE 1900 ETTRERSERT SUPERSEDING MIL~S=19500/143A(EL) 30 December 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPES 2N1183, 2N1183A, 2N1183B, and 9NI1194 ONI11TR4A. ONITIBAR GPM, SP gat we re 1 CH Ane Te i 1.1 Scope.- This specification covers the detail requirements for germanium, PNP, transistors for use in medium-power circult applications. (See 6.2 herein. .) 1.2 Outline and dimensions.- (See Figure 1 herein.) 1,3 Maximum ratings.- (At Ta = + 25C, unless otherwise specifled.): Pc Vv Vean VoEO Veec Venr Tote Altitude we Oe Nw be Ns bn LUI wo Vas ar aa ast. ast or fs W Vde Vde Vde Vde Cc fi. 2N1183 7.5 45 20 35 1.2 -65to +100 | 95,000 2N1184 7.5 45 20 35 1,2 ~65 to +100 | 85,000 2N1183A 7.5 60 30 50 =1.2 =65 to +100 | 85,000 2N1184A4 7.5 60 30 50 ~1.2 -65 to +100 | 85,000 2Ni 1838 7.5 80 40 60 -1.2 -65 to +100 | 85,000 2N1 1848 7.5 80 40 60 =1.2 -65 to +100 | 85,000 yY ~For power dissipation at amblent temperatures over + 25C and up to + 100C, derate at rate of 0.1 W/C, 1.4 Particuler electrical characteristics.~ (At Ta =+ 25C.): ae hee must Vv E Vicetsat) eke pfo_ yy -c at: Vog= -2Vde at: Vog= -2Vde | at: i= ~400mAde | ot Vicg~OVde 1S uAn Ad. As. I An, Ala le= ImAde ic = @UV MAC ic = =400mA mAdc p= =4UMAUC ~ 2N1183,A,B | 2N1184,A,8 late oe Vde Vde Mc/s C/W AAT. an An ~~. ne ~~~ FVulry 4 A soo nano Ved same x 60 120 -1.5 -0.3 --- 1 FSC 5961MIL~S-19500/143 B(EL) 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of this specification to the extent specified herein: SPECIFICATIONS MILITARY MIL~S~19500 Semiconductor Devices, General Specification For STANDARDS MILITARY MIL-STD~750 Test Methods For Semiconductor Devices (Copies of specifications, standards, drawings, and publications required by contractors in connection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. Both the title and number or symbol should be stipulat- ed when requesting copfes.) 3. REQUIREMENTS 3.1 General.- Requirements for the transistors shall be in accordance with Specification MIL=5-19500, and as otherwise specified herein. 3.2 Abbreviations and Symbols.- The abbreviations and symbols used herein are defined In Specification MIL~S-19500; 3.3 Design and construction.~ The transistors shall be of the design, construction, and physical dimensions specified in Figure 1 herein. 3.3.1 Terminal arrangement.~ The terminal arrangement on the transistor shall be os indicated in Figure | herein. 3.3.2 Terminal-lead length.- Terminal-lead length(s) other than that specified in Figure 1 may be furnished under contract or order (see 6.3 herein); however, where such other lead lengths are required and provided, it shall not be construed as affecting adversely the Qualified- product status of the device, or applicable JAN marking. 3.3.3 Operating positlon.- The transistors shall be capable of proper operation in any position,MIL-S-19500/143B(EL) 3.4 Performance characterlstics.- The transistor performance characteristics shall be as specified in tables 1, I], and Ill herein. Except where specifically differentiated for respective transistor types (see 1.3, 1.4, and Tables J, II, and III), the performance require- ments, including operating characteristics, ratings, test conditions, and test limits shall apply equally to all transistor types covered herein. , 3.5 Marking.- Except as otherwise specified herein, marking shall be in accordance with Specification MIL-S-19500, If any specification-requirements waiver has been granted, the product-identification marking shall consist of the classification type designation only.. (See 4.3.5 herein.) 4, QUALITY ASSURANCE PROVISIONS 4.1 General.- Except as otherwise specified herein, the responsibility for Inspection, general procedures for acceptance, classification of inspection, and Inspection conditions and methods of test shall be in accordance with Specification MIL-S-19500, Quality Assurance Provisions. 4.1.1 Inspection lot.- Applicable to the semiconductor devices covered herein, the term inspection lof" shall be as defined in paragraph 4.3.2.1 of Specification MIL-S-19500 except that the 6-week~period time limitation stipulated therein shall be considered as not compulsory. 4.1.2 Procedure for lots held more than 1 year.- The requirements in Specification MIL~S-19500, paragraph 4.2, applicable to lots held more than 6 months" shall apply, here- with, only to lots held more than | year. 4,2 Qualification and Quality Conformance Inspection.~ Qualification and Quality Conformance Inspection shall be in accordance with Specification MIL-S-19500, Quality Assurance Provistons, and as otherwise specified herein (see 4.2.2 herein). Groups A, B, and C inspection shall consist of the examinations and tests specified in Tables I, If and Hl, respectively, herein. Quality Conformance inspection shall include inspection of Preparation for Delivery (see 5.) herein). 4.2.1 Specified LTPD for subgroups.- The LTPD specified for a subgroup in Table |, Il, and Ill herein shall apply for all of the tests, combined, in the subgroup. 4.2.2 Group C testing.- Unless otherwise specified, Group C tests shall be performed on the initial lot on thereafter on a lot every & months. (See Table If! herein.) The contractor shall, throughout the course of a contract or order, permit the Government representative to scrutinize all test data and findings covering manufacturer's test program on Group C characteris- tics and parameters for the product(s) concerned. Upon determination by the Government in- spector (in advance of Group C, 6-month, test results) that Group C parameters are not being adequately met, the Government Inspector may require lot-by-lot inspection (normally for a minimum of 3 consective lots) to be performed for required Group C tests.MIL-S-19500/143B(EL) MUL MIT IEPA ef 4.2.3 Disposition of sample units.- Sample units that have been subjected to Group B, Sungroup 4 and 5 tests shall not be delivered on the contract or order. Sample units that Ll. Le htm mba vn vet aneend Genre 2 Gi: 1 9 4 & al 7 be nel 276 Been suBjectea fo ana nave PGsseG Croup ov, Subgzoups ty, by 4, &, GAG ?/ fests, ona Group C Subgroup | test, these tests to be considered non-destructive, may be delivered on the contract or order provided that, after Group B and C Inspection is terminated, those sample units are subjected to and pass Group A Inspection. Defective units from any sample group that may have passed group inspection shall not be delivered on the contract or order until 4.3.1 Test temperature.- Ali electrical performance characteristics shall be measured at an ambient temperature of + 5 + 32C unlase otherwiea enectfied ambient temperature of + 25 3C, unless otherwise specified. 4.3.2 Interval for End-Point test measurements.- All applicable End=Point Test measure~ ments shall be performed, after sample units have been subjscied to required physical -mechani- = oe aaetfed te nmsmeptmnmnae wjtth the = cal or environmental TSST(S), In accordance with the following time-delay i limitations: (a) For Qualification Inspection: within 24 hours. (b) For Quality Conformance inspaction: within 96 hours. 4.3.3 Shock.- Tha shock testing apparatus shall be capable of providing shock pulses of ewe Popomey ee wee SESS Ne Raper NT Bree EERE Sethe wee Ve the specified peak acceleration, waveform, and pulse duration to tha " body of the device. The acceleration pulse, as determined from the unfiltered output of a transducer with a natural frequency greater than 10,000 cycles per second, shall be a half-sine waveform with an alban cmb la dete etinn eee mbeme theme + Of amon an & aft ths enaeiftae nal aad eed Sm The ul MRO WUMIC GAISIOOFIVE not yrourer rriwn x av Perec ul oO +. eciriea veUR ac cerirarion. Hie pu duration shall be measured between the points at 10 percent of the peak acceleration during rise, and at 10 percent of the peak acceleration during decoy, Absolute tolerance of the pulse duration shall be + 30 percent of the specified duration, 4.3.4 Mechanical Damage Resulting from Tests.- Except for intentionally deforming, mutiloting, or dismembering mechanical-stress tests to which samples are subjected, there shall be no evidence of mechanical damage to any sample unit as a result of any of the Groups A, B, and C tests. 4Table |. Group A inspection. Test Method per Examination or test Conditions LTPD Symbol Limits Unit MIL-STD-750 Vv 2/ Min Max Subgroup 1} 10 2071 Visual and mechanical o-~ --- =< ers soe examination Subgroup 2 5 syogroup = 3020 Floating potential: Ip = 0 Voltmeter input resistance = 10 Meg, min 2N1183A,2N11844 Veg = 60 Vde Vepp over wH2 Ve 2N11838,2N1184B = Vc, = ~80 Vde Vepp owm> so w)e2 Ve 3036 Collector-to-base cutoff Bias Cond. D current: le = 0 2N1183,2N1184 Ven = 45 Vde leno --- -0,25 mAdc 2N1183A,2N1184A Ve, = -60 Vde Cao wn 70+25 mAde 2N1183B, 2N1184B Vos = -80 Vde lcpo --- -0.25 mAdc - 3076 Static forward-current Voge = 2 Vde transfer ratio: le = -400 mAdc 2N1183, A, B hee 206 ae 2N1184, A, B hee 40 1200 --- 3066 Base-to-emitter voltage Test Cond. B VBE --- 1.5 Vde Vacz -2 Vde | -= -400 mAde Cc Subgroup 3 5 3071 Collector-to-emitter Ic = 400 mAdc Vcg(sot) --- -0.3 Vde soturation voltage Ip = -40 mAdc Gn5 Ay n MiL-S-19500/143B(EL) Table |. Group A inspection-(Cont'd). Test Method per Examination or test Conditions LTPD Symbo! Limits Unit MIL-STD-750 V 2/ Min Max Subgroup 3-(cont'd) 301] Collector~to-emitter Blas Cond. D breakdown voltage: l- = -50 mAdc Ip = 0 2N1183, 2N1 184 BVcEO ~-20 --- Vde 2N1183A, 2N1184A BV -30 ~-- Vde CEO 2N1183B, 2N1184B BVCEG -40 see Vde 3011 Collector-to-emitter Bias Cond, C breakdown voltage: lo= ~50 mAde 2N1183, 2N1184 BV ces =35 e-- Vde 2N1183A, 2N1184A BVces 50 --- Vde 2N1183B, 2N1184B BVepe 600 == Vde Subgroup 4 i0 : 3036 Collector-to-base Bias Cond. D leno ~~ -0.03 mAd cutoff current Ven = -1.5 Vde ne 3061 Emitter-to-base Bias Cond. D leBo ~-- 0.10 mAdc cutoff current Vi, = -20 Vde EB !. =0 Cc 3301 Small-signal short-circuit Ve, = -6 Vde f, 0.5 --- Mc/s forward-current transfer I. = 1 mAde ratio cutoff frequency V See 3.4 herein. 2/ See 4.3.1 herein.MIL-S-19500/143B(EL) Table tl. Group B inspection. Test Method per Examination or test Conditions LTPD Symbol Limits Unit MIL-STD-750 / 2/ Min Max Subgroup 1 20 2066 Physical dimensions --~ wae ee eee Subgroup 2 Ht 2031 Soldering heat oon -2- ere eee wee 1051 Temperature cycling Test Cond.B except --- wee eee eee Tehigh}=* 10C min 1056 Thermal shock Test Cond. A --- wee ee nee (glass strain) 1021 Moisture resistance No Initial conditioning --- ene ee ee End-point tests: 3036 Collector=to-base Bias Cond. D cutoff current: le = 0 2N1 183, 2N1184 Vcp = 45 Vde lcso eee =0.375 mAdc 2N1183A, 2N1184A Vog = -60 Vde lego ese -0.375; mAde ZN1 1838, 2N3 1648 Vor = -80 Vde lcRO --- -0.375 mAde 3076 Static forward-current Vee = 2 Vde transfer ratio: le = -400 mAdc 2N1183, A, B hee 13 wee ate 2N1184, A, B hee 2% w= one Subgroup 3 10 2016 Shock 37/ Non-operating =< o-- eee eee G = 500 5 blows of 1.0 msec ea. in orientations X1, Yl, 21 {total = 15 blows) 7MIL-S-19500/143B(EL) Table 11. Group B inspection-(Cont'd), Test Method per MIL-STD-750 Examination or test / Conditions 2/ LTPD Symbol Limits Unit Min Max 2046 2056 2006 2036 1046 1033 Subgroup 3-(cont'd) Vibration fatigue Vibration, variable ea ee 8 . mequeonuy Constant acceleration (centrifuge) tah bao wi End=po t ests: Same as listed under Subgroup 2 above Subgroup 4 Lead fatigue End-point tests: Same as listed under. Cab 9. have ww ms WHYVWYo Subgroup. 5 Salt spray (corrosion) End-point tests: Same as listed under Subgroup 2 above Guhnenn & SUCgTOUp High-temperature life (non-operating) Same as listed under Subgroup 2 above Non-operating G = 20 G = 10,000 Orientations X1,Y1,Z1 15 Test Cond.E 15 a Teg = 100C min $s ~e wo M oOMIL=S-19500/1 43B(EL) Table Ii. Group B inspection-(Cont'd). Test Method per Examination or test Conditions LTPD Symbol Limits Unit MiL-STD-750 i 2/ Min Max. Subgroup 7 =10 1026 Steady state operation Te = +75C, min woo wee ene ae life P= 2.5W, max Vos = ~12 Vde le = -0.12 Ade End-point tests: Same as listed under Subgroup 2 above / ~ See 3 4 herein. See 4.3.) herein. See 4.3.3 herein.MIL-S-19500/143B(EL) i/ Table HI. Group C inspection. Test Method per Examination or test Conditions LTPD Symbol Limits Unit MIL-STD~750 2/ ao Min Max . Subgroup | 10 1001 Barometric pressure, Pressure = 15.0 mmHg =-- eee wee wee reduced {altitude opera- Normal mounting ton): t = 1 minute, minimum Measurement during test: 3036 Collector-to-base Blas Cond. D cutoff current: ie = @ 2N1183, 2N1184 Vag = -45 Vde 2N1183A, 2N1 184A Vee = ~60 Vde Ich 2N1183B, 2N1184B Ver = 80 Vde lego 3451 Thermal resistance Ty = 495C Pc (junction-to-case) -0.375 mAde -0.375 mAdc -0.375 mAdc 19 0 (C/W V/ ~ Periodicity: See 4.2.2 herein, 2/ ~ See 3.4 herein. 3/ See 4.3.1 herain.MIL-S-19500/143B(EL) rr-.800# 050 | 08 toao Hh i METAR er: | 2g 4 MOUNTING Ho & BASE a a Ho dt 8 | t i (3) LD pena Jat 2.005 H} 141.005 ee (CONNECTED TO Case) PIN Nac x, i INSUL 4 Tike 2 EYELETS. KR I/\ 38 T "po yy T 3P cutter | 086 .003 _* DIA NOTES: T. All dimensions in inches. Figure t. -Guiiine and dimensions, eeeMIL-S-19500/143B(EL) eparation for delivery shall be in accordance with a 6.1 Notes.- The notes included In Specific MIL-S-19500, with the following Vices Sieuey VU; exceptions, cre. applicable to this specification. 6.2 Application guidance, ~ To insure proper circuit application, particuiar attention shouid be given to the ailferentias voltage-anc d-current requirements, ratings, and performance characteris- tics pertinent to the individual translstor types covered herein. 6.3 Ordering dato.- See 3.3.2 herein. 6.4 Quallfication.~ With respect to products requiring qualification, awards will be made only for such products as have, prior to the time set for opening of bids, been tested and approv~ ed for Incluston. In Quallfled Products List (QPL)~19500, whether or not such products have actually been so listed by that date. Information pertaining to qualification of products covered by this specification should be requested from the Commanding General, U. S. Army Electronics Command, Fort Monmouth, New Jerssy 07703, Attention: AMSEL=PP-EM=2. Custodian: Preparing activity: Army-EL Army~ELINSTRUCTIONS: In 2 continuing effort to make our standardization documents better, the DoD provides this form for use in submitting commenti and suggestions for improvements. All users of military standardization documents are invited to provide suggestions. This form may be detached, folded along the lines indicated, taped along the loose edge (DO NOT STAPLE}, and mailed. In block 5, be as specific as possible about particular problem areas such as wording which required interpretation, was too rigid, restrictive, loose, ambiguous, or was incompatible, and give proposed wording changes which would alleviate the problems. Enter in block 6 any remarks not related to a specific paragraph of the document. 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