© 2009 IXYS All rights reserved 1 - 2
DSI 45-16AR
20090529a
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
VRSM VRRM Type
V V
1700 1600 DSI 45-16AR
VRRM = 1600 V
IF(AV)M = 48 A
Symbol Conditions Maximum Ratings
IF(AV)M TC= 105°C; 180° sine 48 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 475 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 520 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 380 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 420 A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine 1120 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 1120 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 720 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 720 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~
Weight typical 6 g
Features
•International standard package
•Planar glassivated chips
• Isolated and UL registered
•Epoxy meets UL 94V-0
Applications
•Supplies for DC power equipment
•DC supply for PWM inverter
•Field supply for DC motors
•Battery DC power supplies
Advantages
•Space and weight savings
•Simple mounting
•Improved temperature and power cycling
•Reduced protection circuits
Rectifier Diode
Symbol Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM ≤3mA
VFIF = 40 A; TVJ = 25°C≤1.18 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 8mΩ
RthJC DC current 0.55 K/W
RthCH typical 0.2 K/W
Data according to IEC 60747
A = Anode, C = Cathode
ISOPLUS247TM
TAB
C
A
AC
123
4
EQ
R
D
L1
L
A2
A
S
T
U
bb1
b2
e
A1
c
L2
.620 .635 15.75 16.13
E
1.65
15.75
13.21
4.32
3.81
19.81
5.59
10.92.430
.170
R
U
T
S
.620
.065
.520
L1
Q
L
e
.150
.220
.780
.190
.640
.080
.540
.170
.244
BSC
.800
4.83
2.03
16.26
13.72
4.32
20.32
6.20
BSC
20.80
0.61
2.92
1.91
1.14
1.91
2.29
4.83
MIN
MILLIMETERS
MAX
MIN
c
D
b2
b1
.024
.819
.115
.075
A1
b
A2
A.090
.045
.075
.190
.031
.840
.123
.084
.100
.055
.085
.205
INCHES
SYM MAX
21.34
0.80
3.12
2.13
1.40
2.16
2.54
5.21
L2
0 .100 0 2.54
of JEDEC outlineTO-247ADexcept screw hole.
NOTE: 1.This drawing will meet all dimensionsrequiremen
t
2.Leadsterminals are Pb-free solder plated.
3.Bottom heatsink (4) is pre-Ni plated and electrically
isolated 2,500V from pin 1, 2, and 3.
http://store.iiic.cc/
© 2009 IXYS All rights reserved 2 - 2
DSI 45-16AR
20090529a
IXYS reserves the right to change limits, test conditions and dimensions.
0.001 0.01 0.1 1
0
100
200
300
400
500
23456789110
102
103
104
0.00.40.81.21.6
0
10
20
30
40
50
60
70
0 10203040
0
20
40
60
80
100
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
I2t
IFSM
IF
A
VFt
s
t
ms
Ptot
W
Id(AV)M
A
Tamb
t
s
K/W
A2s
0 20 40 60 80 100 120 140
0
10
20
30
40
50
IF(AV)M
TC
A
V
A
°C °C
DSI45
TVJ = 45°C
50Hz, 80% VRRM VR = 0 V
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
RthHA :
0.5 K/W
1.0 K/W
1.5K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
TVJ = 150°C
TVJ = 45°C
TVJ=150°C
TVJ= 25°C
TVJ = 150°C
ZthJC
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.1633 0.016
2 0.2517 0.118
3 0.0933 0.588
4 0.04167 2.6
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