BC817-16Q / -25Q / -40Q
Document number: DS38331 Rev. 3 - 2
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BC817-16Q / -25Q / -40Q
45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > 45V
IC = 0.5A Continuous Collector Current
ICM = 1A Peak Pulse Current
Complementary PNP Types: BC807-xx
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, ―Green‖ Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Weight 0.008 grams (Approximate)
Ordering Information (Notes 4 and 5)
Part Number
Compliance
Reel Size (inches)
Tape Width (mm)
BC817-16Q-7-F
Automotive
7
8
BC817-25Q-7-F
Automotive
7
8
BC817-40Q-7-F
Automotive
7
8
BC817-40Q-13-F
Automotive
13
8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
C
D
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
SOT23
Device Symbol
Top View
Pin-Out
XXX = Product Type Marking Code (See Table Above)
YM = Date Code Marking
Y = Year ex: C = 2015
M = Month ex: 9 = September
SOT23
BC817-16Q / -25Q / -40Q
Document number: DS38331 Rev. 3 - 2
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November 2016
© Diodes Incorporated
BC817-16Q / -25Q / -40Q
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
0.5
A
Peak Collector Current
ICM
1.0
A
Peak Base Current
IBM
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
310
mW
(Note 7)
350
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
403
°C/W
(Note 7)
357
Thermal Resistance, Junction to Leads
(Note 8)
RθJL
350
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 6. For a device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except mounted on 15mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BC817-16Q / -25Q / -40Q
Document number: DS38331 Rev. 3 - 2
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© Diodes Incorporated
BC817-16Q / -25Q / -40Q
Thermal Characteristics and Derating Information
025 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s)
10m 100m 110 100 1k
0.1
1
10
Single Pulse. Tamb=25oC
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
µ
BC817-16Q / -25Q / -40Q
Document number: DS38331 Rev. 3 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
V
IC = 100µA
Collector-Emitter Breakdown Voltage
BVCEO
45
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
5
V
IC = 100µA
Collector-Emitter Cut-Off Current
ICES
100
5.0
nA
µA
VCE = 45V
VCE = 25V, TJ = +150°C
Emitter-Base Cut-Off Current
IEBO
100
nA
VEB = 5.0V
DC Current Gain (Note 10)
BC817-16Q
BC817-25Q
BC817-40Q
hFE
100
160
250
250
400
600
VCE = 1.0V, IC = 100mA
BC817-16Q
BC817-25Q
BC817-40Q
60
100
170
VCE = 1.0V, IC = 300mA
Collector-Emitter Saturation Voltage (Note 10)
VCE(SAT)
0.7
V
IC = 500mA, IB = 50mA
Base-Emitter Voltage (Note 10)
VBE
1.2
V
VCE = 1.0V, IC = 300mA
Gain Bandwidth Product
fT
100
MHz
VCE = 5.0V, IC = 10mA,
f = 50MHz
Collector-Base Capacitance
CCBO
12
pF
VCB = 10V, f = 1.0MHz
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC817-16Q / -25Q / -40Q
Document number: DS38331 Rev. 3 - 2
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© Diodes Incorporated
BC817-16Q / -25Q / -40Q
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0
100
200
300
400
500
0 1 2
I , COLLECTOR CURRENT (mA)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
0
20
40
60
80
100
010 20
I , COLLECTOR CURRENT (mA)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
CE
10
100
1,000
110
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Figure 3 Typical DC Current Gain vs. Collector Current
C
V = 1V
CE
150 C°
T = 25 C
A°
-50 C°
100 1,000
0.1
0
0.1
0.2
0.3
0.4
0.5
110
V , COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
I / I = 10
CB
150 C°
25 C°
-50 C°
100 1,000
0.1
10
100
1,000
110 100 1,000
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
Figure 5 Gain-Bandwidth Product vs. Collector Current
C
BC817-16Q / -25Q / -40Q
Document number: DS38331 Rev. 3 - 2
6 of 7
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© Diodes Incorporated
BC817-16Q / -25Q / -40Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
X
Y
Y1 C
X1
BC817-16Q / -25Q / -40Q
Document number: DS38331 Rev. 3 - 2
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© Diodes Incorporated
BC817-16Q / -25Q / -40Q
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