2011-07-251
PZTA42
1
2
3
4
NPN Silicon High-Voltage Transistors
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: PZTA92 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
PZTA42 PZTA42 1=B 2=C 3=E 4=C - - SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 6
Collector current IC500 mA
Base current IB100
Total power dissipation-
TS 124 °C
Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 17 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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PZTA42
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 200 V, IE = 0
VCB = 200 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
Base emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 20 MHz, VCE = 10 V, f = 20 MHz
fT- 70 - MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
Ccb - - 3 pF
1Pulse test: t < 300µs; D < 2%
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PZTA42
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00724PZTA 42/43
10
10 mA
h
C
10
5
FE
10
3
1
100
5
10 10 10
-1 0 1 2 3
Ι
5
102
555
2
Collector current IC = ƒ(VBE)
VCE = 10V
EHP00726PZTA 42/43
10
0V
BE
1.5
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
mA
5
102
Collector cutoff current ICBO = ƒ(TA)
VCB = 200 V
EHP00725PZTA 42/43
10
0˚C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
Transition frequency fT = ƒ(IC)
VCE = 10 V
EHP00723PZTA 42/43
10
MHz
10 10 mA
f
C
1010
T
555
Ι
0123
10
3
2
101
5
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PZTA42
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
10
20
30
40
50
60
70
pF
90
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.3
0.6
0.9
1.2
W
1.8
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00320PZTA 42/43
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
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PZTA42
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-07-256
PZTA42
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
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please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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