2011-10-05
1
BCV26, BCV46
1
2
3
PNP Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV27, BCV47 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCV26
BCV46
FDs
FEs
1=B
1=B
2=E
2=E
3=C
3=C
SOT23
SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCV26
BCV46
VCEO
30
60
V
Collector-base voltage
BCV26
BCV46
VCBO
40
80
Emitter-base voltage VEBO 10
Collector current IC500 mA
Peak collector current, tp ≤ 10 ms ICM 800
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 74 °C
Ptot 360 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
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BCV26, BCV46
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 210 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV26
IC = 10 mA, IB = 0 , BCV46
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV26
IC = 100 µA, IE = 0 , BCV46
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10 - -
Collector-base cutoff current
VCB = 30 , IE = 0 , BCV26
VCB = 60 , IE = 0 , BCV46
VCB = 30 , IE = 0 , TA = 150 °C, BCV26
VCB = 60 , IE = 0 , TA = 150 °C, BCV46
ICBO
-
-
-
-
-
-
-
-
0.1
0.1
10
10
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV26
IC = 100 µA, VCE = 1 V, BCV46
IC = 10 mA, VCE = 5 V, BCV26
IC = 10 mA, VCE = 5 V, BCV46
IC = 100 mA, VCE = 5 V, BCV26
IC = 100 mA, VCE = 5 V, BCV46
IC = 0.5 A, VCE = 5 V, BCV26
IC = 0.5 A, VCE = 5 V, BCV46
hFE
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1 V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 1.5
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BCV26, BCV46
1Pulse test: t < 300µs; D < 2%
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 4.5 - pF
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BCV26, BCV46
DC current gain hFE = ƒ(IC)
VCE = 5 V
10
EHP00298BCV 26/46
-1 3
10mA
3
10
6
10
5
5
10
0
10
1
10
4
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 1000
0
10
EHP00296BCV 26/46
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 1000
0
10
EHP00295BCV 26/46
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
0
10
EHP00297BCV 26/46
A
T
150
0
4
10
Ι
CBO
nA
50 100
1
10
2
10
3
10
˚C
max
typ
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BCV26, BCV46
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00294BCV 26/46
03
10mA
1
10
3
10
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
2
4
6
8
10
12
pF
16
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00292BCV 26/46
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
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BCV26, BCV46
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-10-05
7
BCV26, BCV46
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
