DSA 120X150LB Schottky Diode Gen2 VRRM = 150 V IDAV = 2x 75 A VF = 0.80 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 Part number DSA120X150LB n.c. A1 9 8 7 Iso la to ted he su at rfa sin ce k 1 3 2 4 6 5 K2 K1 E72873 D1 7 6 5 8 = n/c 4 D2 3 2 9 1 Features / Advantages: Applications: * Very low VF * Extremely low switching losses * Low IRM values * Improved thermal behaviour * High reliability circuits operation * Low voltage peaks for reduced protection circuits * Low noise switching * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved Package: SMPD * Isolation Voltage: 3000 V~ (t = 1s) * Industry convenient outline * RoHS compliant * Soldering pins for PCB mounting * Backside: DCB ceramic * Reduced weight * Advanced power cycling Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130610e 1-5 DSA 120X150LB Schottky Ratings Symbol Definitions VRSM max. non-repetitive rev. blocking voltage VRRM max. repetitive reverse blocking voltage IR reverse current, drain current VR = 150 V VF forward voltage drop IF = 60 A IF = 120 A IFAV avarage forward current VF0 rF threshold voltage slope resistance RthJC thermal resistance junction to case RthJH thermal resistance case to heatsink Ptot total power dissipation IFSM max. forward surge current CJ IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved Conditions min. typ. max. TVJ = 25C 150 TVJ = 25C 150 V TVJ = 25C TVJ = 125C 1 5 mA mA TVJ = 25C 0.93 1.13 V V IF = 60 A IF = 120 A TVJ = 150C 0.74 0.95 V V rectangular; d = 0.5 TC = 135C 75 A TVJ = 175C 0.51 1.3 V mW 0.8 K/W for power loss calculation only with thermal transfer paste (IXYS test setup) 0.25 K/W 25C 185 W t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C 700 A VR = 24 V; f = 1 MHz TVJ = 25C TC = 1.05 V Data according ot IEC 60747 and per semiconductor unless otherwise specified 480 pF 20130610e 2-5 DSA 120X150LB Package SMPD Ratings Symbol Definitions Conditions IRMS RMS current wide pin standard pin Tstg Top TVJ storage temperature opertation temperature virtual junction temperature min. -55 -55 -55 Weight mounting force with clip d Spp/App d Spb/Apb creepage distance on surface / striking distance through air terminal to terminal terminal to backside VISOL isolation voltage t = 1 second t = 1 minute 40 A A 150 150 175 C C C Part number Date code Assembly line 130 N mm 4.0 mm 3000 2500 V V ~ ~ Part number D S A 120 X 150 LB XXXXXXXXXX yywwA Data Matrix Code Part # Date Code Assembly line Lot # Split Lot Individual # g 1.6 50/60 Hz; RMS; IISOL < 1 mA Backside DCB = Diode = Schottky Diode = low VF = Current Rating [A] = Parallel legs = Reverse Voltage [V] = SMPD-B Pin 1 identifier Ordering Part Name Marking on Product Standard DSA120X150LB-TRR DSA120X150LB-TRR Tape&Reel 200 510493 DSA120X150LB DSA120X150LB Blister 45 510238 Equivalent Circuits for Simulation V0 100 60 UL Logo ~ I max. 8.5 FC Digits 1 to 19: 20 to 23: 24 to 25: 26 to 31: 32: 33 to 36: typ. R0 *on die level Delivering Mode Base Qty Ordering Code TVJ = 175C Schottky V0 max threshold voltage 0.51 V R0 max slope resistance * 1.3 mW IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130610e 3-5 DSA 120X150LB Outlines SMPD A(8:1) 5,5 0,1 2) (6x) 1 0,05 0 + 0,15 2 0,1 0,5 0,1 1) 18 0,1 seating plane (3x) 2 0,05 9 0,1 8 4 0,05 0,55 0,1 9 32,7 0,5 23 0,2 2 0,2 7 2) 4,85 0,2 25 0,2 3) 0,05 6 5 4 3 2 1 A Pin number 2,75 0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 m convex; position of DCB area in relation to plastic rim: 25 m (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 m Ni + 10 - 25 m Sn (galv.) cutting edges may be partially free of plating 5,5 0,1 13,5 0,1 16,25 0,1 19 0,1 D1 7 5 8 = n/c 9 6 4 D2 3 2 1 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130610e 4-5 DSA 120X150LB 150 10000 100 TVJ=175C 10 120 150C 1 IF [A] 90 IR [pF] 100C [mA] 0.1 TVJ = 150C 125C 25C 60 CT 125C 1000 75C 0.01 30 50C 0.001 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0001 0 50 120 0 50 100 150 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 90 IRMS = 100 A 100 DC 80 d = 0.5 IF(AV) P(AV) 60 d= DC 0.5 0.33 0.25 0.17 0.08 60 [W] [A] 40 30 20 0 150 TVJ = 25C VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 100 100 0 50 100 150 0 200 0 TC [C] 20 40 60 80 100 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss @ TJ = 175C 1.4 1.2 1.0 0.8 ZthJH [K/W] 0.6 0.4 0.2 0.0 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130610e 5-5