© 2013 IXYS All rights reserved 1 - 5
20130610e
DSA 120X150LB
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
VRRM = 150 V
IDAV = 2x 75 A
VF = 0.80 V
Schottky Diode Gen2
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel Legs
6
5
4
3
2
1
7
9
D1
D2
8 = n/c
Part number
DSA120X150LB
Features / Advantages:
• Very low VF
• Extremely low switching losses
• Low IRM values
• Improved thermal behaviour
• High reliability circuits operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
Package: SMPD
• Isolation Voltage: 3000 V~ (t = 1s)
• Industry convenient outline
• RoHS compliant
• Soldering pins for PCB mounting
• Backside: DCB ceramic
• Reduced weight
• Advanced power cycling
Applications:
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
E72873
8
3 2 1
79
Isolated surface
to heatsink
A1
A2
K1
K2
n.c.
6 5 4
© 2013 IXYS All rights reserved 2 - 5
20130610e
DSA 120X150LB
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
Schottky Ratings
Symbol Definitions Conditions min. typ. max.
VRSM max. non-repetitive rev. blocking voltage TVJ = 25°C 150 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 V
IRreverse current, drain current VR = 150 V TVJ = 25°C
TVJ = 125°C
1
5
mA
mA
VFforward voltage drop IF = 60 A TVJ = 25°C
IF = 120 A
0.93
1.13
V
V
IF = 60 A TVJ = 150°C
IF = 120 A
0.74
0.95
V
V
IFAV avarage forward current rectangular; d = 0.5 TC = 135°C 75 A
VF0
rF
threshold voltage
slope resistance for power loss calculation only TVJ = 175°C 0.51
1.3
V
mW
RthJC thermal resistance junction to case 0.8 K/W
RthJH thermal resistance case to heatsink with thermal transfer paste (IXYS test setup) 1.05 0.25 K/W
Ptot total power dissipation TC = 25°C 185 W
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C 700 A
CJVR = 24 V; f = 1 MHz TVJ = 25°C 480 pF
© 2013 IXYS All rights reserved 3 - 5
20130610e
DSA 120X150LB
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
XXXXXXXXXX
yywwA
Part number
Date code
Backside DCB
Pin 1 identifier
UL Logo
Data Matrix Code
Digits
1 to 19: Part #
20 to 23: Date Code
24 to 25: Assembly line
26 to 31: Lot #
32: Split Lot
33 to 36: Individual #
~ ~ ~
Assembly line
Package SMPD Ratings
Symbol Definitions Conditions min. typ. max.
IRMS RMS current wide pin
standard pin
100
60
A
A
Tstg
Top
TVJ
storage temperature
opertation temperature
virtual junction temperature
-55
-55
-55
150
150
175
°C
°C
°C
Weight 8.5 g
FCmounting force with clip 40 130 N
d Spp/App
d Spb/Apb
creepage distance on surface /
striking distance through air
terminal to terminal 1.6 mm
terminal to backside 4.0 mm
VISOL isolation voltage t = 1 second
t = 1 minute 50/60 Hz; RMS; IISOL < 1 mA 3000
2500
V
V
Part number
D = Diode
S = Schottky Diode
A = low VF
120 = Current Rating [A]
X = Parallel legs
150 = Reverse Voltage [V]
LB = SMPD-B
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard DSA120X150LB-TRR DSA120X150LB-TRR Tape&Reel 200 510493
DSA120X150LB DSA120X150LB Blister 45 510238
Equivalent Circuits for Simulation *on die level TVJ = 175°C
Schottky
V0 max
R0 max
threshold voltage
slope resistance *
0.51
1.3
V
mW
IV
0
R
0
© 2013 IXYS All rights reserved 4 - 5
20130610e
DSA 120X150LB
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
1
23
654
987
32,7
0,5
20,05
(3x)
18 0,1
2,75 0,1
5,5 0,1
13,5 0,1
16,25 0,1
19 0,1
25 0,2
0,5 0,1
90,1
23
0,2
10,05
(6x)
5,5
0,1
2)
2)
1)
A
0,55
0,1
40,05
4,85
0,2
2
0,2
0,05
3)
A ( 8 : 1 )
0
0,15
+
2°
0,1
seating plane
Pin number
Notes:
1) potrusion may add 0.2 mm max. on each side
2) additional max. 0.05 mm per side by punching misalignement
or overlap of dam bar or bending compression
3) DCB area 10 to 50 µm convex;
position of DCB area in relation to plastic rim: ±25 µm
(measured 2 mm from Cu rim)
4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (galv.)
cutting edges may be partially free of plating
6
5
4
3
2
1
7
9
D1
D2
8 = n/c
Outlines SMPD
© 2013 IXYS All rights reserved 5 - 5
20130610e
DSA 120X150LB
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
0 50 100 150 200
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
30
60
90
120
150
0 50 100 150
0.0001
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100
0
30
60
90
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 50 100 150
100
1000
10000
TVJ = 25°C
IF
[A]
VF [V]
IR
[mA]
VR [V] VR [V]
CT
[pF]
TC [°C] IF(AV) [A]
P(AV)
[W]
ZthJH
[K/W]
t [s]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
Fig. 4 Average forward current
IF(AV) vs. case temperature TC
Fig. 5 Forward power loss
@ TJ = 175°C
Fig. 6 Transient thermal impedance junction
IF(AV)
[A]
TVJ =
150°C
125°C
25°C
TVJ=175°C
150°C
125°C
100°C
75°C
50°C
25°C
d =
DC
0.5
0.33
0.25
0.17
0.08
DC
d = 0.5
IRMS = 100 A
