1000100 200 400 600 800
100 200 400 600 800 1000
70 140 280 420 560 700
10
30
170
1.0
10
500
40
SIYU
R
V
µA
pF
I
R
Cj
最大正向电压
I
F
= 3.0A
最大反向电流
TA= 25
℃
典型结电容
V
R
=
4.0V, f = 1MHz
电特性
TA = 25
℃
除非另有规定。
Electrical Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
单位
Unit
符号
Symbols
TA=100
℃
Maximum forward voltage
Maximum reverse current
Type junction capacitance
V
F
-50 --- +150
V
V
V
A
A
µA
℃
/W
℃
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
极限值和温度特性
TA = 25
℃ 除非另有规定。
Maximum Ratings & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
最大反向峰值电流
Maximum
peak
reverse current full cycle
典型热阻
Typical thermal resistance
工作结温和存储温度
符号
Symbols
单位
Unit
Operating junction and storage temperature range Tj, TSTG
@TA = 75
℃
R
θJA
塑封硅整流桥堆
反向电压
50---1000V
正向电流
6.0 A
特征
Features
·低的反向漏电流
Low reverse leakage
·较强的正向浪涌承受能力
High forward surge capability
机械数据
Mechanical Data
·
封装
:
塑料封装
Case: Molded Plastic
·
极性
:
标记模压或印于本体
Polarity: Symbols molded or marked on body
·
安装位置
:
任意
Mounting Position: Any
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 1000 V
Forward Current 6.0 A
+~~-
.995(25.3)
.983(24.7)
.134(3.4)
.122(3.1)
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.043(1.1)
.035(0.9)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
.074(1.9)
.059(1.5)
.146(3.7)
.130(3.3)
.303(7.7)
.287(7.3)
.708(18.0)
.669(17.0)
.157
(4.0)
.602(15.3)
.578(14.7)
Unit
：
inch
（
mm
）
.031(0.8)
.023(0.6)
.114(2.8)
.098(2.5)
.150(3.8)
.134(3.4)
.150(3.8)
.134(3.4)
.189(4.8)
.173(4.4)
.382(9.7)
.366(9.3)
￠
.134(8 .4)
.122(3.1)
·
重量
: 4.6
克
Weight:4.6 Grams
·浪涌承受能力：170 A S
urge overload rating:170 Amperes peak
KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610
GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610
KBJ601 ...... KBJ610
KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610
GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610
6.0
加散热片
T
C
=111
℃
无散热片
Ta= 25
℃
2.8
300
300
210
- 125 - 大昌电子
DACHANG ELECTRONICS
SIYU
R
KBJ601...... KBJ610
特性曲线
Characteristic Curves
V
F
Instantaneous Forward Voltage (V)
正向电流 I
F
(A)
平均正向电流 I
F(AV)
(A)
I
F
Instantaneous Forward Current (A)
I
F(A)
Average Forward Rectified Current (A)
0 40 80 120 160
0
2.0
4.0
1.0
3.0
+~~-
P.C.B.
on glass-epoxi substrate
soldering land 5mmф
sine wave R-load
free in air
峰值正向浪涌电流 I
FSM
(A)
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
Number of Cycles at 60 Hz.
I
FSM
Peak Forward Surge Current (A)
FORWARD POWER DISSIPATION
FORWARD POWER DISSIPATION P
F
(W))
功率损耗
P(W)
10 10002 5 20 50
0
200
240
0
2
4
6
10
12
50
Sine wave
Tj=150℃
12 634
8
14
7
FORWARD CURRENT DERATING CURVE
平均正向电流 I
F(AV)
(A)
I
F(A)
Average Forward Rectified Current (A)
0 40 80 120 160
0
5
9
2
7
+~~-
Tc-sensing point
sine wave R-load
with heatsink
Tc
160
120
80
40
1
6
4
8
3
10
0.1
0.4 0.5 0.7 0.8 0.9 1.2
1
10
1.10.6 1.0
Pulse measurement
per diode
Tl=150℃
Tl=25℃
I
FSM
10mS 10mS
1 Cycle
non-repetitive
Tj=25
℃
before
通过电流的周期
正向电流降额曲线
正向电压 V
F
(V)
浪涌特性曲线（最大值）
管体温度 T
C
(
°C
)
Case Temperature Tc(℃)
平均整流电流 I
0
(A)
AVERAGE RECGIFIED FORWARD
CURRENT I
o
(A)
功率损耗曲线
环境温度 Ta(
°C
)
Tamb, ambient temperature (°C)
正向电流降额曲线
正向特性曲线（典型值）
FORWARD CURRENT DERATING CURVE
TYPICAL FORWARD CHARACTERISTIC
大昌电子
DACHANG ELECTRONICS
- 126 -
