2N930A - Microsemi - Product.Live

December 2012 I

IGLOO Low Power Flash FPGAs

with Flash*Freeze Technology

Features and Benefits

Low Power

• 1.2 V to 1.5 V Core Voltage Support for Low Power

• Supports Single-Voltage System Operation

• 5 µW Power Consumption in Flash*Freeze Mode

• Low Power Active FPGA Operation

• Flash*Freeze Technology Enables Ultra-Low Power

Consumption while Maintaining FPGA Content

• Easy Entry to / Exit from Ultra-Low Power Flash*Freeze Mode

High Capacity

• 15K to 1 Million System Gates

• Up to 144 Kbits of True Dual-Port SRAM

• Up to 300 User I/Os

Reprogrammable Flash Technology

• 130-nm, 7-Layer Metal, Flash-Based CMOS Process

• Instant On Level 0 Support

• Single-Chip Solution

• Retains Programmed Design When Powered Off

• 250 MHz (1.5 V systems) and 160 MHz (1.2 V systems) System

Performance

In-System Programming (ISP) and Security

• ISP Using On-Chip 128-Bit Advanced Encryption Standard

(AES) Decryption (except ARM®-enabled IGLOO® devices) via

JTAG (IEEE 1532–compliant)†

• FlashLock® Designed to Secure FPGA Contents

High-Performance Routing Hierarchy

• Segmented, Hierarchical Routing and Clock Structure

Advanced I/O

• 700 Mbps DDR, LVDS-Capable I/Os (AGL250 and above)

• 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation

• Bank-Selectable I/O Voltages—up to 4 Banks per Chip

• Single-Ended I/O Standards: LVTTL, LVCMOS

3.3 V / 2.5 V / 1.8 V / 1.5 V / 1.2 V, 3.3 V PCI / 3.3 V PCI-X†,

and LVCMOS 2.5 V / 5.0 V Input†

• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and M-

LVDS (AGL250 and above)

• Wide Range Power Supply Voltage Support per JESD8-B,

Allowing I/Os to Operate from 2.7 V to 3.6 V

• Wide Range Power Supply Voltage Support per JESD8-12,

Allowing I/Os to Operate from 1.14 V to 1.575 V

• I/O Registers on Input, Output, and Enable Paths

• Hot-Swappable and Cold-Sparing I/Os‡

• Programmable Output Slew Rate† and Drive Strength

• Weak Pull-Up/-Down

• IEEE 1149.1 (JTAG) Boundary Scan Test

• Pin-Compatible Packages across the IGLOO Family

Clock Conditioning Circuit (CCC) and PLL†

• Six CCC Blocks, One with an Integrated PLL

• Configurable Phase Shift, Multiply/Divide, Delay Capabilities,

and External Feedback

• Wide Input Frequency Range (1.5 MHz up to 250 MHz)

Embedded Memory

• 1 kbit of FlashROM User Nonvolatile Memory

• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit† RAM

Blocks (×1, ×2, ×4, ×9, and ×18 organizations)

• True Dual-Port SRAM (except ×18)†

ARM Processor Support in IGLOO FPGAs

• M1 IGLOO Devices—Cortex™-M1 Soft Processor Available

with or without Debug

† AGL015 and AGL030 devices do not support this feature. ‡ Supported only by AGL015 and AGL030 devices.

IGLOO Devices AGL0151AGL030 AGL060 AGL125 AGL250 AGL400 AGL600 AGL1000

ARM-Enabled IGLOO Devices2M1AGL250 M1AGL600 M1AGL1000

System Gates 15,000 30,000 60,000 125,000 250,000 400,000 600,000 1,000,000

Typical Equivalent Macrocells 128 256 512 1,024 2,048 – – –

VersaTiles (D-flip-flops) 384 768 1,536 3,072 6,144 9,216 13,824 24,576

Flash*Freeze Mode (typical, µW) 5 5 10 16 24 32 36 53

RAM kbits (1,024 bits) – – 18 36 36 54 108 144

4,608-Bit Blocks – – 4 8 8 12 24 32

FlashROM Kbits (1,024 bits) 1 1 1 1 1 1 1 1

AES-Protected ISP 2– – Yes Yes Yes Yes Yes Yes

Integrated PLL in CCCs 3 ––11 1 1 1 1

VersaNet Globals 46 6 18 18 18 18 18 18

I/O Banks 2 2 2 2 4 4 4 4

Maximum User I/Os 49 81 96 133 143 194 235 300

Package Pins

UC/CS

QFN

VQFP

FBGA

QN68

UC81

CS81

QN48, QN68,

QN132

VQ100

CS121 3

QN132

VQ100

FG144 6

CS196

QN132

VQ100

FG144

CS81, CS196 5

QN132 5,6

VQ100

FG144

CS196

FG144, FG256,

FG484

CS281

FG144, FG256,

FG484

CS281

FG144, FG256,

FG484

Notes:

1. AGL015 is not recommended for new designs

2. AES is not available for ARM-enabled IGLOO devices.

3. AGL060 in CS121 does not support the PLL.

4. Six chip (main) and twelve quadrant global networks are available for AGL060 and above.

5. The M1AGL250 device does not support this package.

6. Device/package support TBD.

7. The IGLOOe datasheet and IGLOOe FPGA Fabric User’s Guide provide information on higher densities and additional features.

Revision 23

IGLOO Low Power Flash FPGAs

II Revision 23

I/Os Per Package1

IGLOO Devices AGL0152AGL030 AGL060 AGL125 AGL250 AGL400 AGL600 AGL1000

ARM-Enabled

IGLOO Devices M1AGL250 M1AGL600 M1AGL1000

Package

I/O Type3

Single-Ended I/O

Single-Ended I/O 4

Differential I/O Pairs

Single-Ended I/O 4

Differential I/O Pairs

Single-Ended I/O 4

Differential I/O Pairs

Single-Ended I/O 4

Differential I/O Pairs

QN48 –34– –––––––––

QN68 49 49 – – – – – – – – – –

UC81 –66– –––––––––

CS81 –66– –607––––––

CS121 ––9696––––––––

VQ100 –7771716813––––––

QN132 –81808487

5,6 19 5,6 ––––––

CS196 –––133143

535 5143 35 – – – –

FG144 ––96

797 97 24 97 25 97 25 97 25

FG2567– – – – – – 178 38 177 43 177 44

CS281 – – – – – – – – 215 53 215 53

FG4847– – – – – – 194 38 235 60 300 74

Notes:

1. When considering migrating your design to a lower- or higher-density device, refer to the IGLOO FPGA Fabric User’s Guide to

ensure compliance with design and board migration requirements.

2. AGL015 is not recommended for new designs.

3. When the Flash*Freeze pin is used to directly enable Flash*Freeze mode and not used as a regular I/O, the number of single-

ended user I/Os available is reduced by one.

4. Each used differential I/O pair reduces the number of single-ended I/Os available by two.

5. The M1AGL250 device does not support QN132 or CS196 packages.

6. Device/package support TBD.

7. FG256 and FG484 are footprint-compatible packages.

Table 1 • IGLOO FPGAs Package Sizes Dimensions

Package UC81 CS81 CS121 QN48 QN68 QN132 CS196 CS281 FG144 VQ100 FG256 FG484

Length × Width

(mm\mm)

4 × 4 5 × 5 6 × 6 6 × 6 8 × 8 8 × 8 8 × 8 10 × 10 13 × 13 14 × 14 17 × 17 23 × 23

Nominal Area

(mm2)

16 25 36 36 64 64 64 100 169 196 289 529

Pitch (mm) 0.4 0.5 0.5 0.4 0.4 0.5 0.5 0.5 1.0 0.5 1.0 1.0

Height (mm) 0.80 0.80 0.99 0.90 0.90 0.75 1.20 1.05 1.45 1.00 1.60 2.23

IGLOO Low Power Flash FPGAs

Revision 23 III

IGLOO Ordering Information

Note: Marking Information: IGLOO V2 devices do not have V2 marking, but IGLOO V5 devices are marked accordingly.

Supply Voltage

2 = 1.2 V to 1.5 V

5 = 1.5 V only

AGL1000 V2 FG

Part Number

IGLOO Devices

Package Type

VQ =Very Thin Quad Flat Pack (0.5 mm pitch)

QN =Quad Flat Pack No Leads (0.4 mm and 0.5 mm pitch)

144 I

Package Lead Count

Y = Device Includes License to Implement IP Based on the

Cryptography Research, Inc. (CRI) Patent Portfolio

Lead-Free Packaging

Application (Temperature Range)

Security Feature

Blank = Commercial (0°C to +70°C Ambient Temperature)

I = Industrial (–40°C to +85°C Ambient Temperature)

Blank = Standard Packaging

G= RoHS-Compliant Packaging (some packages also halogen-free)

PP = Pre-Production

ES = Engineering Sample (Room Temperature Only)

30,000 System Gates

AGL030 =

15,000 System Gates

AGL015 =

60,000 System Gates

AGL060 =

125,000 System Gates

AGL125 =

250,000 System Gates

AGL250 =

600,000 System Gates

AGL600 =

400,000 System Gates

AGL400 =

1,000,000 System Gates

AGL1000 =

CS =Chip Scale Package (0.4 mm and 0.5 mm pitches)

UC =Micro Chip Scale Package (0.4 mm pitch)

FG =Fine Pitch Ball Grid Array (1.0 mm pitch)

IGLOO Devices with Cortex-M1

250,000 System Gates

M1AGL250 =

600,000 System Gates

M1AGL600 =

1,000,000 System Gates

M1AGL1000 =

Blank = Device Does Not Include License to Implement IP Based

on the Cryptography Research, Inc. (CRI) Patent Portfolio

IGLOO Low Power Flash FPGAs

IV Revision 23

Temperature Grade Offerings

IGLOO Device Status

References made to IGLOO devices also apply to ARM-enabled IGLOOe devices. The ARM-enabled part numbers start with M1

(Cortex-M1).

Contact your local Microsemi SoC Products Group representative for device availability:

www.microsemi.com/soc/contact/default.aspx.

AGL015 and AGL030

The AGL015 and AGL030 are architecturally compatible; there are no RAM or PLL features.

Devices Not Recommended For New Designs

AGL015 is not recommended for new designs.

Package

AGL015 1AGL030 AGL060 AGL125 AGL250 AGL400 AGL600 AGL1000

M1AGL250 M1AGL600 M1AGL1000

QN48 –C, I– – – – – –

QN68 C, I – – – – – – –

UC81 –C, I– – – – – –

CS81 – C, I – – C, I – – –

CS121 – – C, I C, I – – – –

VQ100 – C, I C, I C, I C, I – – –

QN132 – C, I C, I 2C, I C, I 2–– –

CS196 – – – C, I C, I C, I – –

FG144 ––C, I

2C, I C, I C, I C, I C, I

FG256 –––– –C, IC, IC, I

CS281 –––– ––C, IC, I

FG484 –––– –C, IC, IC, I

Notes:

1. AGL015 is not recommended for new designs.

2. Device/package support TBD.

C = Commercial temperature range: 0°C to 70°C ambient temperature.

I = Industrial temperature range: –40°C to 85°C ambient temperature.

IGLOO Devices Status M1 IGLOO Devices Status

AGL015 Not recommended for new designs.

AGL030 Production

AGL060 Production

AGL125 Production

AGL250 Production M1AGL250 Production

AGL400 Production

AGL600 Production M1AGL600 Production

AGL1000 Production M1AGL1000 Production

IGLOO Low Power Flash FPGAs

Revision 23 V

Table of Contents

IGLOO Device Family Overview

General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

IGLOO DC and Switching Characteristics

General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1

Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-7

Power Calculation Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-17

User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20

VersaTile Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-98

Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-104

Clock Conditioning Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-113

Embedded SRAM and FIFO Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-116

Embedded FlashROM Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-130

JTAG 1532 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-131

Pin Descriptions

Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1

User Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-2

JTAG Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4

Special Function Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5

Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5

Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5

Package Pin Assignments

UC81 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-1

CS81 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-3

CS121 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-6

CS196 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-9

CS281 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-16

QN48 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-23

QN68 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-25

QN132 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-28

VQ100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-37

FG144 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-42

FG256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-55

FG484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-65

Datasheet Information

List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1

Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-12

Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-12

Revision 23 1-1

1 – IGLOO Device Family Overview

General Description

The IGLOO family of flash FPGAs, based on a 130-nm flash process, offers the lowest power FPGA, a

single-chip solution, small footprint packages, reprogrammability, and an abundance of advanced

features.

The Flash*Freeze technology used in IGLOO devices enables entering and exiting an ultra-low power

mode that consumes as little as 5 µW while retaining SRAM and register data. Flash*Freeze technology

simplifies power management through I/O and clock management with rapid recovery to operation mode.

The Low Power Active capability (static idle) allows for ultra-low power consumption (from 12 µW) while

the IGLOO device is completely functional in the system. This allows the IGLOO device to control system

power management based on external inputs (e.g., scanning for keyboard stimulus) while consuming

minimal power.

Nonvolatile flash technology gives IGLOO devices the advantage of being a secure, low power, single-

chip solution that is Instant On. IGLOO is reprogrammable and offers time-to-market benefits at an ASIC-

level unit cost.

These features enable designers to create high-density systems using existing ASIC or FPGA design

flows and tools.

IGLOO devices offer 1 kbit of on-chip, reprogrammable, nonvolatile FlashROM storage as well as clock

conditioning circuitry based on an integrated phase-locked loop (PLL). The AGL015 and AGL030

devices have no PLL or RAM support. IGLOO devices have up to 1 million system gates, supported with

up to 144 kbits of true dual-port SRAM and up to 300 user I/Os.

M1 IGLOO devices support the high-performance, 32-bit Cortex-M1 processor developed by ARM for

implementation in FPGAs. Cortex-M1 is a soft processor that is fully implemented in the FPGA fabric. It

has a three-stage pipeline that offers a good balance between low power consumption and speed when

implemented in an M1 IGLOO device. The processor runs the ARMv6-M instruction set, has a

configurable nested interrupt controller, and can be implemented with or without the debug block. Cortex-

M1 is available for free from Microsemi for use in M1 IGLOO FPGAs.

The ARM-enabled devices have ordering numbers that begin with M1AGL and do not support AES

decryption.

Flash*Freeze Technology

The IGLOO device offers unique Flash*Freeze technology, allowing the device to enter and exit ultra-low

power Flash*Freeze mode. IGLOO devices do not need additional components to turn off I/Os or clocks

while retaining the design information, SRAM content, and registers. Flash*Freeze technology is

combined with in-system programmability, which enables users to quickly and easily upgrade and update

their designs in the final stages of manufacturing or in the field. The ability of IGLOO V2 devices to

support a wide range of core voltage (1.2 V to 1.5 V) allows further reduction in power consumption, thus

achieving the lowest total system power.

When the IGLOO device enters Flash*Freeze mode, the device automatically shuts off the clocks and

inputs to the FPGA core; when the device exits Flash*Freeze mode, all activity resumes and data is

retained.

The availability of low power modes, combined with reprogrammability, a single-chip and single-voltage

solution, and availability of small-footprint, high pin-count packages, make IGLOO devices the best fit for

portable electronics.

IGLOO Device Family Overview

1-2 Revision 23

Flash Advantages

Low Power

Flash-based IGLOO devices exhibit power characteristics similar to those of an ASIC, making them an

ideal choice for power-sensitive applications. IGLOO devices have only a very limited power-on current

surge and no high-current transition period, both of which occur on many FPGAs.

IGLOO devices also have low dynamic power consumption to further maximize power savings; power is

even further reduced by the use of a 1.2 V core voltage.

Low dynamic power consumption, combined with low static power consumption and Flash*Freeze

technology, gives the IGLOO device the lowest total system power offered by any FPGA.

Security

Nonvolatile, flash-based IGLOO devices do not require a boot PROM, so there is no vulnerable external

bitstream that can be easily copied. IGLOO devices incorporate FlashLock, which provides a unique

combination of reprogrammability and design security without external overhead, advantages that only

an FPGA with nonvolatile flash programming can offer.

IGLOO devices utilize a 128-bit flash-based lock and a separate AES key to provide the highest level of

protection in the FPGA industry for intellectual property and configuration data. In addition, all FlashROM

data in IGLOO devices can be encrypted prior to loading, using the industry-leading AES-128 (FIPS192)

bit block cipher encryption standard. AES was adopted by the National Institute of Standards and

Technology (NIST) in 2000 and replaces the 1977 DES standard. IGLOO devices have a built-in AES

decryption engine and a flash-based AES key that make them the most comprehensive programmable

logic device security solution available today. IGLOO devices with AES-based security provide a high

level of protection for remote field updates over public networks such as the Internet, and are designed to

ensure that valuable IP remains out of the hands of system overbuilders, system cloners, and IP thieves.

Security, built into the FPGA fabric, is an inherent component of the IGLOO family. The flash cells are

located beneath seven metal layers, and many device design and layout techniques have been used to

make invasive attacks extremely difficult. The IGLOO family, with FlashLock and AES security, is unique

in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is protected with

industry-standard security, making remote ISP possible. An IGLOO device provides the best available

security for programmable logic designs.

Single Chip

Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the

configuration data is an inherent part of the FPGA structure, and no external configuration data needs to

be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based IGLOO FPGAs do

not require system configuration components such as EEPROMs or microcontrollers to load device

configuration data. This reduces bill-of-materials costs and PCB area, and increases security and system

reliability.

Instant On

Flash-based IGLOO devices support Level 0 of the Instant On classification standard. This feature helps

in system component initialization, execution of critical tasks before the processor wakes up, setup and

configuration of memory blocks, clock generation, and bus activity management. The Instant On feature

of flash-based IGLOO devices greatly simplifies total system design and reduces total system cost, often

eliminating the need for CPLDs and clock generation PLLs. In addition, glitches and brownouts in system

power will not corrupt the IGLOO device's flash configuration, and unlike SRAM-based FPGAs, the

device will not have to be reloaded when system power is restored. This enables the reduction or

complete removal of the configuration PROM, expensive voltage monitor, brownout detection, and clock

generator devices from the PCB design. Flash-based IGLOO devices simplify total system design and

reduce cost and design risk while increasing system reliability and improving system initialization time.

IGLOO flash FPGAs allow the user to quickly enter and exit Flash*Freeze mode. This is done almost

instantly (within 1 µs) and the device retains configuration and data in registers and RAM. Unlike SRAM-

based FPGAs the device does not need to reload configuration and design state from external memory

components; instead it retains all necessary information to resume operation immediately.

IGLOO Low Power Flash FPGAs

Revision 23 1-3

Reduced Cost of Ownership

Advantages to the designer extend beyond low unit cost, performance, and ease of use. Unlike SRAM-

based FPGAs, Flash-based IGLOO devices allow all functionality to be Instant On; no external boot

PROM is required. On-board security mechanisms prevent access to all the programming information

and enable secure remote updates of the FPGA logic. Designers can perform secure remote in-system

reprogramming to support future design iterations and field upgrades with confidence that valuable

intellectual property cannot be compromised or copied. Secure ISP can be performed using the industry-

standard AES algorithm. The IGLOO family device architecture mitigates the need for ASIC migration at

higher user volumes. This makes the IGLOO family a cost-effective ASIC replacement solution,

especially for applications in the consumer, networking/communications, computing, and avionics

markets.

Firm-Error Immunity

Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike

a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the

configuration cell and thus change the logic, routing, or I/O behavior in an unpredictable way. These

errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a

complete system failure. Firm errors do not exist in the configuration memory of IGLOO flash-based

FPGAs. Once it is programmed, the flash cell configuration element of IGLOO FPGAs cannot be altered

by high-energy neutrons and is therefore immune to them. Recoverable (or soft) errors occur in the user

data SRAM of all FPGA devices. These can easily be mitigated by using error detection and correction

(EDAC) circuitry built into the FPGA fabric.

Advanced Flash Technology

The IGLOO family offers many benefits, including nonvolatility and reprogrammability, through an

advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design

techniques are used to implement logic and control functions. The combination of fine granularity,

enhanced flexible routing resources, and abundant flash switches allows for very high logic utilization

without compromising device routability or performance. Logic functions within the device are

interconnected through a four-level routing hierarchy.

IGLOO family FPGAs utilize design and process techniques to minimize power consumption in all modes

of operation.

Advanced Architecture

The proprietary IGLOO architecture provides granularity comparable to standard-cell ASICs. The IGLOO

device consists of five distinct and programmable architectural features (Figure 1-1 on page 1-4 and

Figure 1-2 on page 1-4):

• Flash*Freeze technology

• FPGA VersaTiles

• Dedicated FlashROM

• Dedicated SRAM/FIFO memory†

• Extensive CCCs and PLLs†

• Advanced I/O structure

The FPGA core consists of a sea of VersaTiles. Each VersaTile can be configured as a three-input logic

function, a D-flip-flop (with or without enable), or a latch by programming the appropriate flash switch

interconnections. The versatility of the IGLOO core tile as either a three-input lookup table (LUT)

equivalent or a D-flip-flop/latch with enable allows for efficient use of the FPGA fabric. The VersaTile

capability is unique to the ProASIC® family of third-generation-architecture flash FPGAs.

† The AGL015 and AGL030 do not support PLL or SRAM.

IGLOO Device Family Overview

1-4 Revision 23

VersaTiles are connected with any of the four levels of routing hierarchy. Flash switches are distributed

throughout the device to provide nonvolatile, reconfigurable interconnect programming. Maximum core

utilization is possible for virtually any design.

Note: *Not supported by AGL015 and AGL030 devices

Figure 1-1 • IGLOO Device Architecture Overview with Two I/O Banks (AGL015, AGL030, AGL060, and

AGL125)

Figure 1-2 • IGLOO Device Architecture Overview with Four I/O Banks (AGL250, AGL600, AGL400, and

AGL1000)

RAM Block

4,608-Bit Dual-Port

SRAM or FIFO Block*

VersaTile

CCC

I/Os

ISP AES

Decryption*

User Nonvolatile

FlashRom

Flash*Freeze

Technology

Charge

Pumps

Bank 0

Bank 1Bank 1

Bank 0Bank 0

Bank 1

ISP AES

Decryption*

User Nonvolatile

FlashRom

Flash*Freeze

Technology

Charge

Pumps

RAM Block

4,608-Bit Dual-Port

SRAM or FIFO Block

(AGL600 and AGL1000)

RAM Block

4,608-Bit Dual-Port

SRAM or FIFO Block

VersaTile

CCC

I/Os

Bank 0

Bank 3Bank 3

Bank 1Bank 1

Bank 2

IGLOO Low Power Flash FPGAs

Revision 23 1-5

Flash*Freeze Technology

The IGLOO device has an ultra-low power static mode, called Flash*Freeze mode, which retains all

SRAM and register information and can still quickly return to normal operation. Flash*Freeze technology

enables the user to quickly (within 1 µs) enter and exit Flash*Freeze mode by activating the

Flash*Freeze pin while all power supplies are kept at their original values. In addition, I/Os and global

I/Os can still be driven and can be toggling without impact on power consumption, clocks can still be

driven or can be toggling without impact on power consumption, and the device retains all core registers,

SRAM information, and states. I/O states are tristated during Flash*Freeze mode or can be set to a

certain state using weak pull-up or pull-down I/O attribute configuration. No power is consumed by the

I/O banks, clocks, JTAG pins, or PLL, and the device consumes as little as 5 µW in this mode.

Flash*Freeze technology allows the user to switch to active mode on demand, thus simplifying the power

management of the device.

The Flash*Freeze pin (active low) can be routed internally to the core to allow the user's logic to decide

when it is safe to transition to this mode. It is also possible to use the Flash*Freeze pin as a regular I/O if

Flash*Freeze mode usage is not planned, which is advantageous because of the inherent low power

static (as low as 12 µW) and dynamic capabilities of the IGLOO device. Refer to Figure 1-3 for an

illustration of entering/exiting Flash*Freeze mode.

VersaTiles

The IGLOO core consists of VersaTiles, which have been enhanced beyond the ProASICPLUS® core

tiles. The IGLOO VersaTile supports the following:

• All 3-input logic functions—LUT-3 equivalent

• Latch with clear or set

• D-flip-flop with clear or set

• Enable D-flip-flop with clear or set

Refer to Figure 1-4 for VersaTile configurations.

Figure 1-3 • IGLOO Flash*Freeze Mode

IGLOO FPGA

Flash*Freeze

Mode Control

Flash*Freeze Pin

Figure 1-4 • VersaTile Configurations

LUT-3

Data Y

CLK

Enable

CLR

D-FF

Data Y

CLK

CLR

D-FF

LUT-3 Equivalent D-Flip-Flop with Clear or Set Enable D-Flip-Flop with Clear or Set

IGLOO Device Family Overview

1-6 Revision 23

User Nonvolatile FlashROM

IGLOO devices have 1 kbit of on-chip, user-accessible, nonvolatile FlashROM. The FlashROM can be

used in diverse system applications:

• Internet protocol addressing (wireless or fixed)

• System calibration settings

• Device serialization and/or inventory control

• Subscription-based business models (for example, set-top boxes)

• Secure key storage for secure communications algorithms

• Asset management/tracking

• Date stamping

• Version management

The FlashROM is written using the standard IGLOO IEEE 1532 JTAG programming interface. The core

can be individually programmed (erased and written), and on-chip AES decryption can be used

selectively to securely load data over public networks (except in the AGL015 and AGL030 devices), as in

security keys stored in the FlashROM for a user design.

The FlashROM can be programmed via the JTAG programming interface, and its contents can be read

back either through the JTAG programming interface or via direct FPGA core addressing. Note that the

FlashROM can only be programmed from the JTAG interface and cannot be programmed from the

internal logic array.

The FlashROM is programmed as 8 banks of 128 bits; however, reading is performed on a byte-by-byte

basis using a synchronous interface. A 7-bit address from the FPGA core defines which of the 8 banks

and which of the 16 bytes within that bank are being read. The three most significant bits (MSBs) of the

FlashROM address determine the bank, and the four least significant bits (LSBs) of the FlashROM

address define the byte.

The Microsemi development software solutions, Libero® System-on-Chip (SoC) and Designer, have

extensive support for the FlashROM. One such feature is auto-generation of sequential programming

files for applications requiring a unique serial number in each part. Another feature allows the inclusion of

static data for system version control. Data for the FlashROM can be generated quickly and easily using

Libero SoC and Designer software tools. Comprehensive programming file support is also included to

allow for easy programming of large numbers of parts with differing FlashROM contents.

SRAM and FIFO

IGLOO devices (except the AGL015 and AGL030 devices) have embedded SRAM blocks along their

north and south sides. Each variable-aspect-ratio SRAM block is 4,608 bits in size. Available memory

configurations are 256×18, 512×9, 1k×4, 2k×2, and 4k×1 bits. The individual blocks have independent

read and write ports that can be configured with different bit widths on each port. For example, data can

be sent through a 4-bit port and read as a single bitstream. The embedded SRAM blocks can be

initialized via the device JTAG port (ROM emulation mode) using the UJTAG macro (except in the

AGL015 and AGL030 devices).

In addition, every SRAM block has an embedded FIFO control unit. The control unit allows the SRAM

block to be configured as a synchronous FIFO without using additional core VersaTiles. The FIFO width

and depth are programmable. The FIFO also features programmable Almost Empty (AEMPTY) and

Almost Full (AFULL) flags in addition to the normal Empty and Full flags. The embedded FIFO control

unit contains the counters necessary for generation of the read and write address pointers. The

embedded SRAM/FIFO blocks can be cascaded to create larger configurations.

PLL and CCC

IGLOO devices provide designers with very flexible clock conditioning circuit (CCC) capabilities. Each

member of the IGLOO family contains six CCCs. One CCC (center west side) has a PLL. The AGL015

and AGL030 do not have a PLL.

The six CCC blocks are located at the four corners and the centers of the east and west sides. One CCC

(center west side) has a PLL.

All six CCC blocks are usable; the four corner CCCs and the east CCC allow simple clock delay

operations as well as clock spine access.

IGLOO Low Power Flash FPGAs

Revision 23 1-7

The inputs of the six CCC blocks are accessible from the FPGA core or from one of several inputs

located near the CCC that have dedicated connections to the CCC block.

The CCC block has these key features:

• Wide input frequency range (fIN_CCC) = 1.5 MHz up to 250 MHz

• Output frequency range (fOUT_CCC) = 0.75 MHz up to 250 MHz

• 2 programmable delay types for clock skew minimization

• Clock frequency synthesis (for PLL only)

Additional CCC specifications:

• Internal phase shift = 0°, 90°, 180°, and 270°. Output phase shift depends on the output divider

configuration (for PLL only).

• Output duty cycle = 50% ± 1.5% or better (for PLL only)

• Low output jitter: worst case < 2.5% × clock period peak-to-peak period jitter when single global

network used (for PLL only)

• Maximum acquisition time is 300 µs (for PLL only)

• Exceptional tolerance to input period jitter—allowable input jitter is up to 1.5 ns (for PLL only)

• Four precise phases; maximum misalignment between adjacent phases of 40 ps × 250 MHz /

fOUT_CCC (for PLL only)

Global Clocking

IGLOO devices have extensive support for multiple clocking domains. In addition to the CCC and PLL

support described above, there is a comprehensive global clock distribution network.

Each VersaTile input and output port has access to nine VersaNets: six chip (main) and three quadrant

global networks. The VersaNets can be driven by the CCC or directly accessed from the core via

multiplexers (MUXes). The VersaNets can be used to distribute low-skew clock signals or for rapid

distribution of high-fanout nets.

I/Os with Advanced I/O Standards

The IGLOO family of FPGAs features a flexible I/O structure, supporting a range of voltages (1.2 V, 1.5 V,

1.8 V, 2.5 V, 3.0 V wide range, and 3.3 V). IGLOO FPGAs support many different I/O standards—single-

ended and differential.

The I/Os are organized into banks, with two or four banks per device. The configuration of these banks

determines the I/O standards supported (Table 1-1).

Table 1-1 • I/O Standards Supported

I/O Bank Type Device and Bank Location

I/O Standards Supported

LVTTL/

LVCMOS

PCI/PCI-X LVPECL, LVDS,

B-LVDS, M-LVDS

Advanced East and west banks of AGL250 and larger

devices

 

Standard Plus North and south banks of AGL250 and

larger devices

All banks of AGL060 and AGL125K



Not supported

Standard All banks of AGL015 and AGL030 Not supported Not supported

IGLOO Device Family Overview

1-8 Revision 23

Each I/O module contains several input, output, and enable registers. These registers allow the

implementation of the following:

• Single-Data-Rate applications

• Double-Data-Rate applications—DDR LVDS, B-LVDS, and M-LVDS I/Os for point-to-point

communications

IGLOO banks for the AGL250 device and above support LVPECL, LVDS, B-LVDS, and M-LVDS. B-LVDS

and M-LVDS can support up to 20 loads.

Hot-swap (also called hot-plug, or hot-insertion) is the operation of hot-insertion or hot-removal of a card

in a powered-up system.

Cold-sparing (also called cold-swap) refers to the ability of a device to leave system data undisturbed

when the system is powered up, while the component itself is powered down, or when power supplies

are floating.

Wide Range I/O Support

IGLOO devices support JEDEC-defined wide range I/O operation. IGLOO devices support both the

JESD8-B specification, covering 3 V and 3.3 V supplies, for an effective operating range of 2.7 V to

3.6 V, and JESD8-12 with its 1.2 V nominal, supporting an effective operating range of 1.14 V to 1.575 V.

Wider I/O range means designers can eliminate power supplies or power conditioning components from

the board or move to less costly components with greater tolerances. Wide range eases I/O bank

management and provides enhanced protection from system voltage spikes, while providing the flexibility

to easily run custom voltage applications.

Specifying I/O States During Programming

You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for

PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information.

Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have

limited display of Pin Numbers only.

1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during

programming.

2. From the FlashPro GUI, click PDB Configuration. A FlashPoint – Programming File Generator

window appears.

3. Click the Specify I/O States During Programming button to display the Specify I/O States During

Programming dialog box.

4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header.

Select the I/Os you wish to modify (Figure 1-5 on page 1-9).

5. Set the I/O Output State. You can set Basic I/O settings if you want to use the default I/O settings

for your pins, or use Custom I/O settings to customize the settings for each pin. Basic I/O state

settings:

1 – I/O is set to drive out logic High

0 – I/O is set to drive out logic Low

Last Known State – I/O is set to the last value that was driven out prior to entering the

programming mode, and then held at that value during programming

Z -Tri-State: I/O is tristated

IGLOO Low Power Flash FPGAs

Revision 23 1-9

6. Click OK to return to the FlashPoint – Programming File Generator window.

Note: I/O States During programming are saved to the ADB and resulting programming files after

completing programming file generation.

Figure 1-5 • I/O States During Programming Window

Revision 23 2-1

2 – IGLOO DC and Switching Characteristics

General Specifications

Operating Conditions

Stresses beyond those listed in Table 2-1 may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Absolute Maximum Ratings are stress ratings only; functional operation of the device at these or any

other conditions beyond those listed under the Recommended Operating Conditions specified in Ta b le 2-

2 on page 2-2 is not implied.

Table 2-1 • Absolute Maximum Ratings

Symbol Parameter Limits1Units

VCC DC core supply voltage –0.3 to 1.65 V

VJTAG JTAG DC voltage –0.3 to 3.75 V

VPUMP Programming voltage –0.3 to 3.75 V

VCCPLL Analog power supply (PLL) –0.3 to 1.65 V

VCCI and VMV 2DC I/O buffer supply voltage –0.3 to 3.75 V

VI I/O input voltage –0.3 V to 3.6 V (when I/O hot insertion mode is enabled)

–0.3 V to (VCCI + 1 V) or 3.6 V, whichever voltage is lower

(when I/O hot-insertion mode is disabled)

TSTG 3Storage Temperature –65 to +150 °C

TJ3Junction Temperature +125 °C

Notes:

1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may

undershoot or overshoot according to the limits shown in Table 2-4 on page 2-3.

2. VMV pins must be connected to the corresponding VCCI pins. See the "Pin Descriptions" chapter of the IGLOO FPGA

Fabric User’s Guide for further information.

3. For flash programming and retention, maximum limits refer to Table 2-3 on page 2-2, and for recommended operating

limits, refer to Table 2-2 on page 2-2.

IGLOO DC and Switching Characteristics

2-2 Revision 23

Table 2-2 • Recommended Operating Conditions 1

Symbol Parameter Commercial Industrial Units

TAAmbient Temperature 0 to +70 –40 to +85 °C

TJJunction Temperature 20 to +85 –40 to +100 °C

VCC31.5 V DC core supply voltage5 1.425 to 1.575 1.425 to 1.575 V

1.2 V–1.5 V wide range DC

core supply voltage 4,6

1.14 to 1.575 1.14 to 1.575 V

VJTAG JTAG DC voltage 1.4 to 3.6 1.4 to 3.6 V

VPUMP Programming voltage Programming Mode 3.15 to 3.45 3.15 to 3.45 V

Operation 70 to 3.6 0 to 3.6 V

VCCPLL8Analog power supply (PLL) 1.5 V DC core supply voltage5 1.425 to 1.575 1.425 to 1.575 V

1.2 V – 1.5 V DC core supply

voltage4,6

1.14 to 1.575 1.14 to 1.575 V

VCCI and

VMV 9

1.2 V DC core supply voltage61.14 to 1.26 1.14 to 1.26 V

1.2 V DC wide range DC

supply voltage6

1.14 to 1.575 1.14 to 1.575 V

1.5 V DC supply voltage 1.425 to 1.575 1.425 to 1.575 V

1.8 V DC supply voltage 1.7 to 1.9 1.7 to 1.9 V

2.5 V DC supply voltage 2.3 to 2.7 2.3 to 2.7 V

3.0 V DC supply voltage 10 2.7 to 3.6 2.7 to 3.6 V

3.3 V DC supply voltage 3.0 to 3.6 3.0 to 3.6 V

LVDS differential I/O 2.375 to 2.625 2.375 to 2.625 V

LVPECL differential I/O 3.0 to 3.6 3.0 to 3.6 V

Notes:

1. All parameters representing voltages are measured with respect to GND unless otherwise specified.

2. To ensure targeted reliability standards are met across ambient and junction operating temperatures, Microsemi

recommends that the user follow best design practices using Microsemi’s timing and power simulation tools.

3. The ranges given here are for power supplies only. The recommended input voltage ranges specific to each I/O

standard are given in Table 2-25 on page 2-24. VCCI should be at the same voltage within a given I/O bank.

4. All IGLOO devices (V5 and V2) must be programmed with the VCC core voltage at 1.5 V. Applications using the V2

devices powered by 1.2 V supply must switch the core supply to 1.5 V for in-system programming.

5. For IGLOO® V5 devices

6. For IGLOO V2 devices only, operating at VCCI  VCC.

7. VPUMP can be left floating during operation (not programming mode).

8. VCCPLL pins should be tied to VCC pins. See the "Pin Descriptions" chapter of the IGLOO FPGA Fabric User’s Guide

for further information.

9. VMV pins must be connected to the corresponding VCCI pins. See the "Pin Descriptions" chapter of the IGLOO FPGA

Fabric User’s Guide for further information.

10. 3.3 V wide range is compliant to the JESD-8B specification and supports 3.0 V VCCI operation.

Table 2-3 • Flash Programming Limits – Retention, Storage, and Operating Temperature1

Product

Grade

Programming

Cycles

Program Retention

(biased/unbiased)

Maximum Storage

Temperature TSTG (°C) 2

Maximum Operating Junction

Temperature TJ (°C) 2

Commercial 500 20 years 110 100

Industrial 500 20 years 110 100

Notes:

1. This is a stress rating only; functional operation at any condition other than those indicated is not implied.

2. These limits apply for program/data retention only. Refer to Table 2-1 on page 2-1 and Table 2-2 for device operating

conditions and absolute limits.

IGLOO Low Power Flash FPGAs

Revision 23 2-3

I/O Power-Up and Supply Voltage Thresholds for Power-On Reset

(Commercial and Industrial)

Sophisticated power-up management circuitry is designed into every IGLOO device. These circuits

ensure easy transition from the powered-off state to the powered-up state of the device. The many

different supplies can power up in any sequence with minimized current spikes or surges. In addition, the

I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1

on page 2-4 and Figure 2-2 on page 2-5.

There are five regions to consider during power-up.

IGLOO I/Os are activated only if ALL of the following three conditions are met:

1. VCC and VCCI are above the minimum specified trip points (Figure 2-1 on page 2-4 and

Figure 2-2 on page 2-5).

2. VCCI > VCC – 0.75 V (typical)

3. Chip is in the operating mode.

VCCI Trip Point:

Ramping up (V5 devices): 0.6 V < trip_point_up < 1.2 V

Ramping down (V5 Devices): 0.5 V < trip_point_down < 1.1 V

Ramping up (V2 devices): 0.75 V < trip_point_up < 1.05 V

Ramping down (V2 devices): 0.65 V < trip_point_down < 0.95 V

VCC Trip Point:

Ramping up (V5 devices): 0.6 V < trip_point_up < 1.1 V

Ramping down (V5 devices): 0.5 V < trip_point_down < 1.0 V

Ramping up (V2 devices): 0.65 V < trip_point_up < 1.05 V

Ramping down (V2 devices): 0.55 V < trip_point_down < 0.95 V

VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically

built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following:

• During programming, I/Os become tristated and weakly pulled up to VCCI.

• JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O

behavior.

Table 2-4 • Overshoot and Undershoot Limits 1

VCCI

Average VCCI–GND Overshoot or

Undershoot Duration

as a Percentage of Clock Cycle2

Maximum Overshoot/

Undershoot2

2.7 V or less 10% 1.4 V

5% 1.49 V

3 V 10% 1.1 V

5% 1.19 V

3.3 V 10% 0.79 V

5% 0.88 V

3.6 V 10% 0.45 V

5% 0.54 V

Notes:

1. Based on reliability requirements at junction temperature at 85°C.

2. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the

maximum overshoot/undershoot has to be reduced by 0.15 V.

3. This table does not provide PCI overshoot/undershoot limits.

IGLOO DC and Switching Characteristics

2-4 Revision 23

PLL Behavior at Brownout Condition

Microsemi recommends using monotonic power supplies or voltage regulators to ensure proper power-

up behavior. Power ramp-up should be monotonic at least until VCC and VCCPLX exceed brownout

activation levels (see Figure 2-1 and Figure 2-2 on page 2-5 for more details).

When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ± 0.25

V for V5 devices, and 0.75 V ± 0.2 V for V2 devices), the PLL output lock signal goes low and/or the

output clock is lost. Refer to the Brownout Voltage section in the "Power-Up/-Down Behavior of Low

Power Flash Devices" chapter of the ProASIC®3 and ProASIC3E FPGA fabric user’s guides for

information on clock and lock recovery.

Internal Power-Up Activation Sequence

1. Core

2. Input buffers

3. Output buffers, after 200 ns delay from input buffer activation

To make sure the transition from input buffers to output buffers is clean, ensure that there is no path

longer than 100 ns from input buffer to output buffer in your design.

Figure 2-1 • V5 Devices – I/O State as a Function of VCCI and VCC Voltage Levels

Region 1: I/O buffers are OFF

Region 2: I/O buffers are ON.

I/Os are functional (except differential inputs)

but slower because VCCI / VCC are below

specification. For the same reason, input

buffers do not meet VIH / VIL levels, and

output buffers do not meet VOH / VOL levels.

Min VCCI datasheet specification

voltage at a selected I/O

standard; i.e., 1.425 V or 1.7 V

or 2.3 V or 3.0 V

VCC

VCC = 1.425 V

Region 1: I/O Buffers are OFF

Activation trip point:

Va = 0.85 V ± 0.25 V

Deactivation trip point:

Vd = 0.75 V ± 0.25 V

Activation trip point:

Va = 0.9 V ± 0.3 V

Deactivation trip point:

Vd = 0.8 V ± 0.3 V

VCC = 1.575 V

Region 5: I/O buffers are ON

and power supplies are within

specification.

I/Os meet the entire datasheet

and timer specifications for

speed, VIH / VIL, VOH / VOL,

etc.

Region 4: I/O

buffers are ON.

I/Os are functional

(except differential inputs)

but slower because VCCI

is below specification. For the

same reason, input buffers do not

meet VIH / VIL levels, and output

buffers do not meet VOH / VOL levels.

where VT can be from 0.58 V to 0.9 V (typically 0.75 V)

VCCI

Region 3: I/O buffers are ON.

I/Os are functional; I/O DC

specifications are met,

but I/Os are slower because

the VCC is below specification.

VCC = VCCI + VT

IGLOO Low Power Flash FPGAs

Revision 23 2-5

Thermal Characteristics

Introduction

The temperature variable in the Designer software refers to the junction temperature, not the ambient

temperature. This is an important distinction because dynamic and static power consumption cause the

chip junction to be higher than the ambient temperature.

EQ 1 can be used to calculate junction temperature.

TJ = Junction Temperature = T + TA

EQ 1

where:

TA = Ambient Temperature

T = Temperature gradient between junction (silicon) and ambient T = ja * P

ja = Junction-to-ambient of the package. ja numbers are located in Table 2-5 on page 2-6.

P = Power dissipation

Figure 2-2 • V2 Devices – I/O State as a Function of VCCI and VCC Voltage Levels

Region 1: I/O buffers are OFF

Region 2: I/O buffers are ON.

I/Os are functional (except differential inputs)

but slower because VCCI/VCC are below

specification. For the same reason, input

buffers do not meet VIH/VIL levels, and

output buffers do not meet VOH/VOL levels.

Min VCCI datasheet specification

voltage at a selected I/O

standard; i.e., 1.14 V,1.425 V, 1.7 V,

2.3 V, or 3.0 V

VCC

VCC = 1.14 V

Region 1: I/O Buffers are OFF

Activation trip point:

= 0.85 V ± 0.2 V

Deactivation trip point:

= 0.75 V ± 0.2 V

Activation trip point:

= 0.9 V ± 0.15 V

Deactivation trip point:

= 0.8 V ± 0.15 V

VCC = 1.575 V

Region 5: I/O buffers are ON

and power supplies are within

specification.

I/Os meet the entire datasheet

and timer specifications for

speed, VIH / VIL , VOH / VOL , etc.

Region 4: I/O

buffers are ON.

I/Os are functional

(except differential inputs)

but slower because VCCI is

below specification. For the

same reason, input buffers do not

meet VIH / VIL levels, and output

buffers do not meet VOH / VOL levels.

where VT can be from 0.58 V to 0.9 V (typically 0.75 V)

VCCI

Region 3: I/O buffers are ON.

I/Os are functional; I/O DC

specifications are met,

but I/Os are slower because

the VCC is below specification.

VCC = VCCI + VT

IGLOO DC and Switching Characteristics

2-6 Revision 23

Package Thermal Characteristics

The device junction-to-case thermal resistivity is jc and the junction-to-ambient air thermal resistivity is

ja. The thermal characteristics for ja are shown for two air flow rates. The absolute maximum junction

temperature is 100°C. EQ 2 shows a sample calculation of the absolute maximum power dissipation

allowed for the AGL1000-FG484 package at commercial temperature and in still air.

EQ 2

Disclaimer:

The simulation for determining the junction-to-air thermal resistance is based on JEDEC standards

(JESD51) and assumptions made in building the model. Junction-to-case is based on SEMI G38-88.

JESD51 is only used for comparing one package to another package, provided the two tests uses the

same condition. They have little relevance in actual application and therefore should be used with a

degree of caution.

Maximum Power Allowed Max. junction temp. (C) Max. ambient temp. (C)–

ja(C/W)

------------------------------------------------------------------------------------------------------------------------------------------ 100C70C–

23.3°C/W

------------------------------------- 1.28 W===

Table 2-5 • Package Thermal Resistivities

Package Type Device Pin Count jc

ja

UnitStill Air 1 m/s 2.5 m/s

Quad Flat No Lead (QN) AGL030 132 13.1 21.4 16.8 15.3 C/W

AGL060 132 11.0 21.2 16.6 15.0 C/W

AGL125 132 9.2 21.1 16.5 14.9 C/W

AGL250 132 8.9 21.0 16.4 14.8 C/W

AGL030 68 13.4 68.4 45.8 43.1 C/W

Very Thin Quad Flat Pack (VQ)* 100 10.0 35.3 29.4 27.1 C/W

Chip Scale Package (CS) AGL1000 281 6.0 28.0 22.8 21.5 C/W

AGL400 196 7.2 37.1 31.1 28.9 C/W

AGL250 196 7.6 38.3 32.2 30.0 C/W

AGL125 196 8.0 39.5 33.4 31.1 C/W

AGL030 81 12.4 32.8 28.5 27.2 C/W

AGL060 81 11.1 28.8 24.8 23.5 C/W

AGL250 81 10.4 26.9 22.3 20.9 C/W

Micro Chip Scale Package (UC) AGL030 81 16.9 40.6 35.2 33.7 C/W

Fine Pitch Ball Grid Array (FG) AGL060 144 18.6 55.2 49.4 47.2 C/W

AGL1000 144 6.3 31.6 26.2 24.2 C/W

AGL400 144 6.8 37.6 31.2 29.0 C/W

AGL250 256 12.0 38.6 34.7 33.0 C/W

AGL1000 256 6.6 28.1 24.4 22.7 C/W

AGL1000 484 8.0 23.3 19.0 16.7 C/W

Note: *Thermal resistances for other device-package combinations will be posted in a later revision.

IGLOO Low Power Flash FPGAs

Revision 23 2-7

Temperature and Voltage Derating Factors

Calculating Power Dissipation

Quiescent Supply Current

Quiescent supply current (IDD) calculation depends on multiple factors, including operating voltages

(VCC, VCCI, and VJTAG), operating temperature, system clock frequency, and power modes usage.

Microsemi recommends using the PowerCalculator and SmartPower software estimation tools to

evaluate the projected static and active power based on the user design, power mode usage, operating

voltage, and temperature.

Table 2-6 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ =

70°C, VCC = 1.425 V)

For IGLOO V2 or V5 devices, 1.5 V DC Core Supply Voltage

Array Voltage

VCC (V)

Junction Temperature (°C)

–40°C 0°C 25°C 70°C 85°C 100°C

1.425 0.934 0.953 0.971 1.000 1.007 1.013

1.500 0.855 0.874 0.891 0.917 0.924 0.929

1.575 0.799 0.816 0.832 0.857 0.864 0.868

Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ =

70°C, VCC = 1.14 V)

For IGLOO V2, 1.2 V DC Core Supply Voltage

Array

Voltage VCC

(V)

Junction Temperature (°C)

–40°C 0°C 25°C 70°C 85°C 100°C

1.14 0.967 0.978 0.991 1.000 1.006 1.010

1.20 0.864 0.874 0.885 0.894 0.899 0.902

1.26 0.794 0.803 0.814 0.821 0.827 0.830

Table 2-8 • Power Supply State per Mode

Power Supply Configurations

Modes/power supplies VCC VCCPLL VCCI VJTAG VPUMP

Flash*Freeze On On On On On/off/floating

Sleep Off Off On Off Off

Shutdown Off Off Off Off Off

No Flash*Freeze On On On On On/off/floating

Note: Off: Power supply level = 0 V

Table 2-9 • Quiescent Supply Current (IDD) Characteristics, IGLOO Flash*Freeze Mode*

Core

Voltage AGL015 AGL030 AGL060 AGL125 AGL250 AGL400 AGL600 AGL1000 Units

Typical

(25°C)

1.2 V 4 4 8 13 20 27 30 44 µA

1.5 V 6 6 10 18 34 51 72 127 µA

Note: *IDD includes VCC, VPUMP, VCCI, VCCPLL, and VMV currents. Values do not include I/O static contribution,

which is shown in Table 2-13 on page 2-10 through Table 2-15 on page 2-11 and Table 2-16 on page 2-11

through Table 2-18 on page 2-12 (PDC6 and PDC7).

IGLOO DC and Switching Characteristics

2-8 Revision 23

Table 2-10 • Quiescent Supply Current (IDD) Characteristics, IGLOO Sleep Mode*

Core

Voltage AGL015 AGL030 AGL060 AGL125 AGL250 AGL400 AGL600 AGL1000 Units

VCCI/ VJTAG = 1.2 V

(per bank) Typical

(25°C)

1.2 V 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 µA

VCCI/VJTAG = 1.5 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 µA

VCCI/VJTAG = 1.8 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 µA

VCCI/VJTAG = 2.5 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 µA

VCCI/VJTAG = 3.3 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 µA

Note: IDD = NBANKS × ICCI. Values do not include I/O static contribution, which is shown in Table 2-13 on page 2-10

through Table 2-15 on page 2-11 and Table 2-16 on page 2-11 through Table 2-18 on page 2-12 (PDC6 and

PDC7).

Table 2-11 • Quiescent Supply Current (IDD) Characteristics, IGLOO Shutdown Mode

Core Voltage AGL015 AGL030 Units

Typical (25°C) 1.2 V / 1.5 V 0 0 µA

IGLOO Low Power Flash FPGAs

Revision 23 2-9

Table 2-12 • Quiescent Supply Current (IDD), No IGLOO Flash*Freeze Mode1

Core

Voltage AGL015 AGL030 AGL060 AGL125 AGL250 AGL400 AGL600 AGL1000 Units

ICCA Current2

Typical (25°C) 1.2 V 5 6 10 13 18 25 28 42 µA

1.5 V 14 16 20 28 44 66 82 137 µA

ICCI or IJTAG Current3

VCCI/VJTAG = 1.2 V

(per bank) Typical

(25°C)

1.2 V 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 µA

VCCI/VJTAG = 1.5 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 µA

VCCI/VJTAG = 1.8 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 µA

VCCI/VJTAG = 2.5 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 µA

VCCI/VJTAG = 3.3 V

(per bank) Typical

(25°C)

1.2 V /

1.5 V

2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 µA

Notes:

1. IDD = NBANKS × ICCI + ICCA. JTAG counts as one bank when powered.

2. Includes VCC, VPUMP, and VCCPLL currents.

3. Values do not include I/O static contribution (PDC6 and PDC7).

IGLOO DC and Switching Characteristics

2-10 Revision 23

Power per I/O Pin

Table 2-13 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings

Applicable to Advanced I/O Banks

VCCI (V)

Static Power

PDC6 (mW)1

Dynamic Power

PAC9 (µW/MHz)2

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 3.3 – 16.27

3.3V LVCMOS Wide Range3 3.3 – 16.27

2.5 V LVCMOS 2.5 – 4.65

1.8 V LVCMOS 1.8 – 1.61

1.5 V LVCMOS (JESD8-11) 1.5 – 0.96

1.2 V LVCMOS41.2 – 0.58

1.2 V LVCMOS Wide Range41.2 – 0.58

3.3 V PCI 3.3 – 17.67

3.3 V PCI-X 3.3 – 17.67

Differential

LVDS 2.5 2.26 23.39

LVPECL 3.3 5.72 59.05

Notes:

1. PDC6 is the static power (where applicable) measured on VCCI.

2. PAC9 is the total dynamic power measured on VCCI.

3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

4. Applicable for IGLOO V2 devices only

Table 2-14 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings

Applicable to Standard Plus I/O Banks

VCCI (V)

Static Power

PDC6 (mW)1

Dynamic Power

PAC9 (µW/MHz)2

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 3.3 – 16.41

3.3V LVCMOS Wide Range3 3.3 – 16.41

2.5 V LVCMOS 2.5 – 4.75

1.8 V LVCMOS 1.8 – 1.66

1.5 V LVCMOS (JESD8-11) 1.5 – 1.00

1.2 V LVCMOS41.2 – 0.61

1.2 V LVCMOS Wide Range41.2 – 0.61

3.3 V PCI 3.3 – 17.78

3.3 V PCI-X 3.3 – 17.78

Notes:

1. PDC6 is the static power (where applicable) measured on VCCI.

2. PAC9 is the total dynamic power measured on VCCI.

3. Applicable for IGLOO V2 devices only.

4. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

IGLOO Low Power Flash FPGAs

Revision 23 2-11

Table 2-15 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings

Applicable to Standard I/O Banks

VCCI (V)

Static Power

PDC6 (mW)1

Dynamic Power

PAC9 (µW/MHz)2

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 3.3 – 17.24

3.3V LVCMOS Wide Range3 3.3 – 17.24

2.5 V LVCMOS 2.5 – 5.64

1.8 V LVCMOS 1.8 – 2.63

1.5 V LVCMOS (JESD8-11) 1.5 – 1.97

1.2 V LVCMOS41.2 – 0.57

1.2 V LVCMOS Wide Range41.2 – 0.57

Notes:

1. PDC6 is the static power (where applicable) measured on VCCI.

2. PAC9 is the total dynamic power measured on VCCI.

3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

4. Applicable for IGLOO V2 devices only.

Table 2-16 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1

Applicable to Advanced I/O Banks

CLOAD (pF) VCCI (V)

Static Power

PDC7 (mW)2

Dynamic Power

PAC10 (µW/MHz)3

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 5 3.3 – 136.95

3.3V LVCMOS Wide Range45 3.3 – 136.95

2.5 V LVCMOS 5 2.5 – 76.84

1.8 V LVCMOS 5 1.8 – 49.31

1.5 V LVCMOS (JESD8-11) 5 1.5 – 33.36

1.2 V LVCMOS55 1.2 – 16.24

1.2 V LVCMOS Wide Range55 1.2 – 16.24

3.3 V PCI 10 3.3 – 194.05

3.3 V PCI-X 10 3.3 – 194.05

Differential

LVDS – 2.5 7.74 156.22

LVPECL – 3.3 19.54 339.35

Notes:

1. Dynamic power consumption is given for standard load and software default drive strength and output slew.

2. PDC7 is the static power (where applicable) measured on VCCI.

3. PAC10 is the total dynamic power measured on VCCI.

4. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

5. Applicable for IGLOO V2 devices only.

IGLOO DC and Switching Characteristics

2-12 Revision 23

Table 2-17 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1

Applicable to Standard Plus I/O Banks

CLOAD (pF) VCCI (V)

Static Power

PDC7 (mW)2

Dynamic Power

PAC10 (µW/MHz)3

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 5 3.3 – 122.16

3.3V LVCMOS Wide Range45 3.3 – 122.16

2.5 V LVCMOS 5 2.5 – 68.37

1.8 V LVCMOS 5 1.8 – 34.53

1.5 V LVCMOS (JESD8-11) 5 1.5 – 23.66

1.2 V LVCMOS55 1.2 – 14.90

1.2 V LVCMOS Wide Range55 1.2 – 14.90

3.3 V PCI 10 3.3 – 181.06

3.3 V PCI-X 10 3.3 – 181.06

Notes:

1. Dynamic power consumption is given for standard load and software default drive strength and output slew.

2. PDC7 is the static power (where applicable) measured on VCCI.

3. PAC10 is the total dynamic power measured on VCCI.

4. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

5. Applicable for IGLOO V2 devices only.

Table 2-18 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1

Applicable to Standard I/O Banks

CLOAD (pF) VCCI (V)

Static Power

PDC7 (mW)2

Dynamic Power

PAC10 (µW/MHz)3

Single-Ended

3.3 V LVTTL / 3.3 V LVCMOS 5 3.3 – 104.38

3.3V LVCMOS Wide Range45 3.3 – 104.38

2.5 V LVCMOS 5 2.5 – 59.86

1.8 V LVCMOS 5 1.8 – 31.26

1.5 V LVCMOS (JESD8-11) 5 1.5 – 21.96

1.2 V LVCMOS55 1.2 – 13.49

1.2 V LVCMOS Wide Range55 1.2 – 13.49

Notes:

1. Dynamic power consumption is given for standard load and software default drive strength and output slew.

2. PDC7 is the static power (where applicable) measured on VCCI.

3. PAC10 is the total dynamic power measured on VCCI.

4. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

5. Applicable for IGLOO V2 devices only.

IGLOO Low Power Flash FPGAs

Revision 23 2-13

Power Consumption of Various Internal Resources

Table 2-19 • Different Components Contributing to Dynamic Power Consumption in IGLOO Devices

For IGLOO V2 or V5 Devices, 1.5 V DC Core Supply Voltage

Parameter Definition

Device Specific Dynamic Power

(µW/MHz)

AGL1000 AGL600 AGL400 AGL250 AGL125 AGL060 AGL030 AGL015

PAC1 Clock contribution of a

Global Rib

7.778 6.221 6.082 4.460 4.446 2.736 0.000 0.000

PAC2 Clock contribution of a

Global Spine

4.334 3.512 2.759 2.718 1.753 1.971 3.483 3.483

PAC3 Clock contribution of a

VersaTile row

1.379 1.445 1.377 1.483 1.467 1.503 1.472 1.472

PAC4 Clock contribution of a

VersaTile used as a

sequential module

0.151 0.149 0.151 0.149 0.149 0.151 0.146 0.146

PAC5 First contribution of a

VersaTile used as a

sequential module

0.057

PAC6 Second contribution of a

VersaTile used as a

sequential module

0.207

PAC7 Contribution of a

VersaTile used as a

combinatorial module

0.276 0.262 0.279 0.277 0.280 0.300 0.281 0.273

PAC8 Average contribution of a

routing net

1.161 1.147 1.193 1.273 1.076 1.088 1.134 1.153

PAC9 Contribution of an I/O

input pin (standard-

dependent)

See Table 2-13 on page 2-10 through Table 2-15 on page 2-11.

PAC10 Contribution of an I/O

output pin (standard-

dependent)

See Table 2-16 on page 2-11 through Table 2-18 on page 2-12.

PAC11 Average contribution of a

RAM block during a read

operation

25.00

PAC12 Average contribution of a

RAM block during a write

operation

30.00

PAC13 Dynamic PLL

contribution

2.70

Note: For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi power

spreadsheet calculator or SmartPower tool in Libero SoC.

IGLOO DC and Switching Characteristics

2-14 Revision 23

Table 2-20 • Different Components Contributing to the Static Power Consumption in IGLOO Devices

For IGLOO V2 or V5 Devices, 1.5 V DC Core Supply Voltage

Parameter Definition

Device-Specific Static Power (mW)

AGL1000 AGL600 AGL400 AGL250 AGL125 AGL060 AGL030 AGL015

PDC1 Array static power in Active

mode

See Table 2-12 on page 2-9.

PDC2 Array static power in Static

(Idle) mode

See Table 2-11 on page 2-8.

PDC3 Array static power in

Flash*Freeze mode

See Table 2-9 on page 2-7.

PDC4 Static PLL contribution 1.84

PDC5 Bank quiescent power

(VCCI-dependent)

See Table 2-12 on page 2-9.

PDC6 I/O input pin static power

(standard-dependent)

See Table 2-13 on page 2-10 through Table 2-15 on page 2-11.

PDC7 I/O output pin static power

(standard-dependent)

See Table 2-16 on page 2-11 through Table 2-18 on page 2-12.

Note: *For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi power

spreadsheet calculator or SmartPower tool in Libero SoC.

IGLOO Low Power Flash FPGAs

Revision 23 2-15

Table 2-21 • Different Components Contributing to Dynamic Power Consumption in IGLOO Devices

For IGLOO V2 Devices, 1.2 V DC Core Supply Voltage

Parameter Definition

Device Specific Dynamic Power

(µW/MHz)

AGL1000 AGL600 AGL400 AGL250 AGL125 AGL060 AGL030 AGL015

PAC1 Clock contribution of a

Global Rib

4.978 3.982 3.892 2.854 2.845 1.751 0.000 0.000

PAC2 Clock contribution of a

Global Spine

2.773 2.248 1.765 1.740 1.122 1.261 2.229 2.229

PAC3 Clock contribution of a

VersaTile row

0.883 0.924 0.881 0.949 0.939 0.962 0.942 0.942

PAC4 Clock contribution of a

VersaTile used as a

sequential module

0.096 0.095 0.096 0.095 0.095 0.096 0.094 0.094

PAC5 First contribution of a

VersaTile used as a

sequential module

0.045

PAC6 Second contribution of a

VersaTile used as a

sequential module

0.186

PAC7 Contribution of a

VersaTile used as a

combinatorial module

0.158 0.149 0.158 0.157 0.160 0.170 0.160 0.155

PAC8 Average contribution of a

routing net

0.756 0.729 0.753 0.817 0.678 0.692 0.738 0.721

PAC9 Contribution of an I/O

input pin (standard-

dependent)

See Table 2-13 on page 2-10 through Table 2-15 on page 2-11.

PAC10 Contribution of an I/O

output pin (standard-

dependent)

See Table 2-16 on page 2-11 through Table 2-18 on page 2-12.

PAC11 Average contribution of a

RAM block during a read

operation

25.00

PAC12 Average contribution of a

RAM block during a write

operation

30.00

PAC13 Dynamic PLL contribution 2.10

Note: For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi power

spreadsheet calculator or SmartPower tool in Libero SoC.

IGLOO DC and Switching Characteristics

2-16 Revision 23

Table 2-22 • Different Components Contributing to the Static Power Consumption in IGLOO Device

For IGLOO V2 Devices, 1.2 V DC Core Supply Voltage

Parameter Definition

Device Specific Static Power (mW)

AGL1000 AGL600 AGL400 AGL250 AGL125 AGL060 AGL030 AGL015

PDC1 Array static power in

Active mode

See Table 2-12 on page 2-9.

PDC2 Array static power in Static

(Idle) mode

See Table 2-11 on page 2-8.

PDC3 Array static power in

Flash*Freeze mode

See Table 2-9 on page 2-7.

PDC4 Static PLL contribution 0.90

PDC5 Bank quiescent power

(VCCI-Dependent)

See Table 2-12 on page 2-9.

PDC6 I/O input pin static power

(standard-dependent)

See Table 2-13 on page 2-10 through Table 2-15 on page 2-11.

PDC7 I/O output pin static

power (standard-

dependent)

See Table 2-16 on page 2-11 through Table 2-18 on page 2-12.

Note: For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi power

spreadsheet calculator or SmartPower tool in Libero SoC.

IGLOO Low Power Flash FPGAs

Revision 23 2-17

Power Calculation Methodology

This section describes a simplified method to estimate power consumption of an application. For more

accurate and detailed power estimations, use the SmartPower tool in Microsemi Libero SoC software.

The power calculation methodology described below uses the following variables:

• The number of PLLs as well as the number and the frequency of each output clock generated

• The number of combinatorial and sequential cells used in the design

• The internal clock frequencies

• The number and the standard of I/O pins used in the design

• The number of RAM blocks used in the design

• Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-23 on

page 2-19.

• Enable rates of output buffers—guidelines are provided for typical applications in Table 2-24 on

page 2-19.

• Read rate and write rate to the memory—guidelines are provided for typical applications in

Table 2-24 on page 2-19. The calculation should be repeated for each clock domain defined in the

design.

Methodology

Total Power Consumption—PTOTAL

PTOTAL = PSTAT + PDYN

PSTAT is the total static power consumption.

PDYN is the total dynamic power consumption.

Total Static Power Consumption—PSTAT

PSTAT = (PDC1 or PDC2 or PDC3) + NBANKS * PDC5 + NINPUTS * PDC6 + NOUTPUTS * PDC7

NINPUTS is the number of I/O input buffers used in the design.

NOUTPUTS is the number of I/O output buffers used in the design.

NBANKS is the number of I/O banks powered in the design.

Total Dynamic Power Consumption—PDYN

PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL

Global Clock Contribution—PCLOCK

PCLOCK = (PAC1 + NSPINE* PAC2 + NROW * PAC3 + NS-CELL* PAC4) * FCLK

NSPINE is the number of global spines used in the user design—guidelines are provided in

the "Spine Architecture" section of the IGLOO FPGA Fabric User’s Guide.

NROW is the number of VersaTile rows used in the design—guidelines are provided in the

"Spine Architecture" section of the IGLOO FPGA Fabric User’s Guide.

FCLK is the global clock signal frequency.

NS-CELL is the number of VersaTiles used as sequential modules in the design.

PAC1, PAC2, PAC3, and PAC4 are device-dependent.

Sequential Cells Contribution—PS-CELL

PS-CELL = NS-CELL * (PAC5 + 1 / 2 * PAC6) * FCLK

NS-CELL is the number of VersaTiles used as sequential modules in the design. When a

multi-tile sequential cell is used, it should be accounted for as 1.

1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-23 on

page 2-19.

FCLK is the global clock signal frequency.

IGLOO DC and Switching Characteristics

2-18 Revision 23

Combinatorial Cells Contribution—PC-CELL

PC-CELL = NC-CELL* 1 / 2 * PAC7 * FCLK

NC-CELL is the number of VersaTiles used as combinatorial modules in the design.

1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-23 on

page 2-19.

FCLK is the global clock signal frequency.

Routing Net Contribution—PNET

PNET = (NS-CELL + NC-CELL) * 1 / 2 * PAC8 * FCLK

NS-CELL is the number of VersaTiles used as sequential modules in the design.

NC-CELL is the number of VersaTiles used as combinatorial modules in the design.

1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-23 on

page 2-19.

FCLK is the global clock signal frequency.

I/O Input Buffer Contribution—PINPUTS

PINPUTS = NINPUTS * 2 / 2 * PAC9 * FCLK

NINPUTS is the number of I/O input buffers used in the design.

2 is the I/O buffer toggle rate—guidelines are provided in Table 2-23 on page 2-19.

FCLK is the global clock signal frequency.

I/O Output Buffer Contribution—POUTPUTS

POUTPUTS = NOUTPUTS * 2 / 2 * 1 * PAC10 * FCLK

NOUTPUTS is the number of I/O output buffers used in the design.

2 is the I/O buffer toggle rate—guidelines are provided in Table 2-23 on page 2-19.

1 is the I/O buffer enable rate—guidelines are provided in Table 2-24 on page 2-19.

FCLK is the global clock signal frequency.

RAM Contribution—PMEMORY

PMEMORY = PAC11 * NBLOCKS * FREAD-CLOCK * 2 + PAC12 * NBLOCK * FWRITE-CLOCK * 3

NBLOCKS is the number of RAM blocks used in the design.

FREAD-CLOCK is the memory read clock frequency.

2 is the RAM enable rate for read operations.

FWRITE-CLOCK is the memory write clock frequency.

3 is the RAM enable rate for write operations—guidelines are provided in Table 2-24 on

page 2-19.

PLL Contribution—PPLL

PPLL = PDC4 + PAC13 *FCLKOUT

FCLKOUT is the output clock frequency.†

† If a PLL is used to generate more than one output clock, include each output clock in the formula by adding its corresponding

contribution (PAC13* FCLKOUT product) to the total PLL contribution.

IGLOO Low Power Flash FPGAs

Revision 23 2-19

Guidelines

Toggle Rate Definition

A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the

toggle rate of a net is 100%, this means that this net switches at half the clock frequency. Below are

some examples:

• The average toggle rate of a shift register is 100% because all flip-flop outputs toggle at half of the

clock frequency.

• The average toggle rate of an 8-bit counter is 25%:

– Bit 0 (LSB) = 100%

– Bit 1 = 50%

– Bit 2 = 25%

–…

– Bit 7 (MSB) = 0.78125%

– Average toggle rate = (100% + 50% + 25% + 12.5% + . . . + 0.78125%) / 8

Enable Rate Definition

Output enable rate is the average percentage of time during which tristate outputs are enabled. When

nontristate output buffers are used, the enable rate should be 100%.

Table 2-23 • Toggle Rate Guidelines Recommended for Power Calculation

Component Definition Guideline

1Toggle rate of VersaTile outputs 10%

2I/O buffer toggle rate 10%

Table 2-24 • Enable Rate Guidelines Recommended for Power Calculation

Component Definition Guideline

1I/O output buffer enable rate 100%

2RAM enable rate for read operations 12.5%

3RAM enable rate for write operations 12.5%

IGLOO DC and Switching Characteristics

2-20 Revision 23

User I/O Characteristics

Timing Model

Figure 2-3 • Timing Model

Operating Conditions: Std. Speed, Commercial Temperature Range (TJ = 70°C), Worst-Case

VCC = 1.425 V, for DC 1.5 V Core Voltage, Applicable to V2 and V5 Devices

DQ DQ

Combinational Cell

I/O Module

(Registered)

I/O Module

(Non-Registered)

I/O Module

(Registered)

I/O Module

(Non-Registered)

LVPECL (Applicable to

Advanced I/O Banks Only)L

LVPECL

(Applicable

to Advanced

I/O Banks only)

LVDS,

BLVDS,

M-LVDS

(Applicable for

Advanced I/O

Banks only)

LVTTL 3.3 V Output drive

strength = 12 mA High slew rate

Combinational Cell

I/O Module

(Non-Registered)

LVTTLOutput drive strength = 8 mA

High slew rate

I/O Module

(Non-Registered)

LVCMOS 1.5 VOutput drive strength = 4 mA

High slew rate

LVTTLOutput drive strength = 12 mA

High slew rate

I/O Module

(Non-Registered)

Input LVTTL

Clock

Input LVTTL

Clock

Input LVTTL

Clock

= 1.22 ns t

= 1.20 ns

= 1.72 ns

= 1.80 ns t

= 3.05 ns (Advanced I/O Banks)

= 1.49 ns

= 4.12 ns (Advanced I/O Banks)

= 0.86 ns t

= 4.42 ns (Advanced I/O Banks)

= 0.92 ns

= 0.87 ns

(Advanced I/O Banks)

CLKQ

= 0.90 ns t

OCLKQ

= 1.02 ns

SUD

= 0.82 ns t

OSUD

= 0.52 ns

= 3.05 ns

(Advanced I/O Banks)

= 0.87 ns (Advanced I/O Banks)

= 1.35 ns

CLKQ

= 0.90 ns

SUD

= 0.82 ns

= 0.87 ns

(Advanced I/O Banks)

ICLKQ

= 0.43 ns

ISUD

= 0.47 ns

= 1.20 ns

IGLOO Low Power Flash FPGAs

Revision 23 2-21

Figure 2-4 • Input Buffer Timing Model and Delays (example)

tPY

(R)

PAD

Vtrip

GND tPY

(F)

Vtrip

50%

VIH

VCC

VIL

tDIN

(R)

DIN

GND tDIN

(F)

50%50%

VCC

PAD Y

tPY

CLK

I/O Interface

DIN

tDIN

To Array

tPY = MAX(tPY(R), tPY(F))

tDIN = MAX(tDIN(R), tDIN(F))

IGLOO DC and Switching Characteristics

2-22 Revision 23

Figure 2-5 • Output Buffer Model and Delays (example)

tDP

(R)

PAD VOL

tDP

(F)

Vtrip

VOH

VCC

D50% 50%

VCC

0 V

DOUT 50% 50% 0 V

tDOUT

(R)

tDOUT

(F)

From Array

PAD

tDP

Std

Load

CLK

I/O Interface

DOUT

tDOUT

tDP = MAX(tDP(R), tDP(F))

tDOUT = MAX(tDOUT(R), tDOUT(F))

IGLOO Low Power Flash FPGAs

Revision 23 2-23

Figure 2-6 • Tristate Output Buffer Timing Model and Delays (example)

CLK

10% VCCI

tZL

Vtrip

50%

tHZ

90% VCCI

tZH

Vtrip

50% 50% tLZ

50%

EOUT

PAD

E50%

tEOUT (R)

50%tEOUT (F)

PAD

DOUT

EOUT

I/O Interface

tEOUT

tZLS

Vtrip

50%

tZHS

Vtrip

50%

EOUT

PAD

E50% 50%

tEOUT (R) tEOUT (F)

50%

VCC

VCCI

VCC

VOH

VOL

tZL, tZH, tHZ, tLZ, tZLS, tZHS

tEOUT = MAX(tEOUT(r), tEOUT(f))

IGLOO DC and Switching Characteristics

2-24 Revision 23

Overview of I/O Performance

Summary of I/O DC Input and Output Levels – Default I/O Software

Settings

Table 2-25 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and

Industrial Conditions—Software Default Settings

Applicable to Advanced I/O Banks

I/O

Standard

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option2

Slew

Rate

VIL VIH VOL VOH IOL1IOH1

Min.V

Max.

Min.

Max.

Min.

VmAmA

3.3 V

LVTTL /

3.3 V

LVCMOS

12 mA 12 mA High –0.3 0.8 2 3.6 0.4 2.4 12 12

3.3 V

LVCMOS

Wide

Range3

100 µA 12 mA High –0.3 0.8 2 3.6 0.2 VCCI – 0.2 0.1 0.1

2.5 V

LVCMOS

12 mA 12 mA High –0.3 0.7 1.7 2.7 0.7 1.7 12 12

1.8 V

LVCMOS

12 mA 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 12 12

1.5 V

LVCMOS

12 mA 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 12 12

1.2 V

LVCMOS4

2 mA 2 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.26 0.25 * VCCI 0.75 * VCCI 2 2

1.2 V

LVCMOS

Wide

Range4,5

100 µA 2 mA High –0.3 0.3 * VCCI 0.7 * VCCI 1.575 0.1 VCCI – 0.1 0.1 0.1

3.3 V PCI Per PCI specifications

3.3 V

PCI-X

Per PCI-X specifications

Notes:

1. Currents are measured at 85°C junction temperature.

2. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is

±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the

IBIS models.

3. All LVMCOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

4. Applicable to V2 Devices operating at VCCI VCC.

5. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification.

IGLOO Low Power Flash FPGAs

Revision 23 2-25

Table 2-26 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and

Industrial Conditions—Software Default Settings

Applicable to Standard Plus I/O Banks

I/O

Standard

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option2

Slew

Rate

VIL VIH VOL VOH IOL IOH

Min.

Max.

Min.

Max.

Min.

VmAmA

3.3 V

LVTTL /

3.3 V

LVCMOS

12 mA 12 mA High –0.3 0.8 2 3.6 0.4 2.4 12 12

3.3 V

LVCMOS

Wide

Range3

100 µA 12 mA High –0.3 0.8 2 3.6 0.2 VDD-0.2 0.1 0.1

2.5 V

LVCMOS

12 mA 12 mA High –0.3 0.7 1.7 2.7 0.7 1.7 12 12

1.8 V

LVCMOS

8 mA 8 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 8 8

1.5 V

LVCMOS

4 mA 4 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 4 4

1.2 V

LVCMOS4

2 mA 2 mA High –0.3 0.35 * VCCI 0.65 * VCCI 1.26 0.25 * VCCI 0.75 * VCCI 2 2

1.2 V

LVCMOS

Wide

Range4

100 µA 2 mA High –0.3 0.3 * VCCI 0.7 * VCCI 1.575 0.1 VCCI – 0.1 0.1 0.1

3.3 V PCI Per PCI specifications

3.3 V

PCI-X

Per PCI-X specifications

Notes:

1. Currents are measured at 85°C junction temperature.

2. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is

±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the

IBIS models.

3. All LVMCOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

4. Applicable to V2 Devices operating at VCCI  VCC.

5. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification.

IGLOO DC and Switching Characteristics

2-26 Revision 23

Table 2-27 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial and

Industrial Conditions—Software Default Settings

Applicable to Standard I/O Banks

I/O

Standard

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option2

Slew

Rate

VIL VIH VOL VOH IOL1IOH1

Min.

Max.

Min.

Max.

Min.

VmAmA

3.3 V

LVTTL /

3.3 V

LVCMOS

8 mA 8 mA High –0.3 0.8 2 3.6 0.4 2.4 8 8

3.3 V

LVCMOS

Wide

Range3

100 µA 8 mA High –0.3 0.8 2 3.6 0.2 VDD-0.2 0.1 0.1

2.5 V

LVCMOS

8 mA 8 mA High –0.3 0.7 1.7 3.6 0.7 1.7 8 8

1.8 V

LVCMOS

4 mA 4 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 4 4

1.5 V

LVCMOS

2 mA 2 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2

1.2 V

LVCMOS4

1 mA 1 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 1 1

1.2 V

LVCMOS

Wide

Range4,5

100 µA 1 mA High –0.3 0.3 * VCCI 0.7 * VCCI 3.6 0.1 VCCI – 0.1 0.1 0.1

Notes:

1. Currents are measured at 85°C junction temperature.

2. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is

±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the

IBIS models.

3. All LVMCOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

4. Applicable to V2 Devices operating at VCCI  VCC.

5. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification.

IGLOO Low Power Flash FPGAs

Revision 23 2-27

Table 2-28 • Summary of Maximum and Minimum DC Input Levels

Applicable to Commercial and Industrial Conditions

DC I/O Standards

Commercial1Industrial2

IIL4IIH5IIL4IIH5

µA µA µA µA

3.3 V LVTTL / 3.3 V LVCMOS 10 10 15 15

3.3 V LVCMOS Wide Range 10 10 15 15

2.5 V LVCMOS 10 10 15 15

1.8 V LVCMOS 10 10 15 15

1.5 V LVCMOS 10 10 15 15

1.2 V LVCMOS3 10 10 15 15

1.2 V LVCMOS Wide Range3 10 10 15 15

3.3 V PCI 10 10 15 15

3.3 V PCI-X 10 10 15 15

Notes:

1. Commercial range (0°C < TA < 70°C)

2. Industrial range (–40°C < TA < 85°C)

3. Applicable to V2 Devices operating at VCCI VCC.

4. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

5. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

IGLOO DC and Switching Characteristics

2-28 Revision 23

Summary of I/O Timing Characteristics – Default I/O Software Settings

Table 2-29 • Summary of AC Measuring Points

Standard Measuring Trip Point (Vtrip)

3.3 V LVTTL / 3.3 V LVCMOS 1.4 V

3.3 V VCMOS Wide Range 1.4 V

2.5 V LVCMOS 1.2 V

1.8 V LVCMOS 0.90 V

1.5 V LVCMOS 0.75 V

1.2 V LVCMOS 0.60 V

1.2 V LVCMOS Wide Range 0.60 V

3.3 V PCI 0.285 * VCCI (RR)

0.615 * VCCI (FF)

3.3 V PCI-X 0.285 * VCCI (RR)

0.615 * VCCI (FF)

Table 2-30 • I/O AC Parameter Definitions

Parameter Parameter Definition

tDP Data to Pad delay through the Output Buffer

tPY Pad to Data delay through the Input Buffer

tDOUT Data to Output Buffer delay through the I/O interface

tEOUT Enable to Output Buffer Tristate Control delay through the I/O interface

tDIN Input Buffer to Data delay through the I/O interface

tHZ Enable to Pad delay through the Output Buffer—High to Z

tZH Enable to Pad delay through the Output Buffer—Z to High

tLZ Enable to Pad delay through the Output Buffer—Low to Z

tZL Enable to Pad delay through the Output Buffer—Z to Low

tZHS Enable to Pad delay through the Output Buffer with delayed enable—Z to High

tZLS Enable to Pad delay through the Output Buffer with delayed enable—Z to Low

IGLOO Low Power Flash FPGAs

Revision 23 2-29

Table 2-31 • Summary of I/O Timing Characteristics—Software Default Settings, Std. Speed Grade,

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI (per

standard)

Applicable to Advanced I/O Banks

I/O Standard

Drive Strength

Equivalent Software Default

Drive Strength Option1 (mA)

Slew Rate

Capacitive Load (pF)

External Resistor ()

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

tZLS (ns)

tZHS (ns)

Units

3.3 V

LVTTL /

3.3 V

LVCMOS

12 mA 12 High 5 – 0.97 2.09 0.18 0.85 0.66 2.14 1.68 2.67 3.05 5.73 5.27 ns

3.3 V

LVCMOS

Wide

Range2

100 µA 12 High 5 – 0.97 2.93 0.18 1.19 0.66 2.95 2.27 3.81 4.30 6.54 5.87 ns

2.5 V

LVCMOS

12 mA 12 High 5 – 0.97 2.09 0.18 1.08 0.66 2.14 1.83 2.73 2.93 5.73 5.43 ns

1.8 V

LVCMOS

12 mA 12 High 5 – 0.97 2.24 0.18 1.01 0.66 2.29 2.00 3.02 3.40 5.88 5.60 ns

1.5 V

LVCMOS

12 mA 12 High 5 – 0.97 2.50 0.18 1.17 0.66 2.56 2.27 3.21 3.48 6.15 5.86 ns

3.3 V PCI Per PCI

spec

– High 10 25 20.97 2.32 0.18 0.74 0.66 2.37 1.78 2.67 3.05 5.96 5.38 ns

3.3 V

PCI-X

Per

PCI-X

spec

– High 10 25 20.97 2.32 0.19 0.70 0.66 2.37 1.78 2.67 3.05 5.96 5.38 ns

LVDS 24 mA – High – – 0.97 1.74 0.19 1.35 – – – – – – – ns

LVPECL 24 mA – High – – 0.97 1.68 0.19 1.16 – – – – – – – ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive

strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

3. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-12 on page 2-78 for

connectivity. This resistor is not required during normal operation.

4. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-30 Revision 23

Table 2-32 • Summary of I/O Timing Characteristics—Software Default Settings, Std. Speed Grade,

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI (per

standard)

Applicable to Standard Plus I/O Banks

I/O Standard

Drive Strength

Equivalent Software Default

Drive Strength Option1 (mA)

Slew Rate

Capacitive Load (pF)

External Resistor ()

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

tZLS (ns)

tZHS (ns)

Units

3.3 V

LVTTL /

3.3 V

LVCMOS

12 mA 12 High 5 – 0.97 1.75 0.18 0.85 0.66 1.79 1.40 2.36 2.79 5.38 4.99 ns

3.3 V

LVCMOS

Wide

Range2

100 µA 12 High 5 – 0.97 2.45 0.18 1.20 0.66 2.47 1.92 3.33 3.90 6.06 5.51 ns

2.5 V

LVCMOS

12 mA 12 High 5 – 0.97 1.75 0.18 1.08 0.66 1.79 1.52 2.38 2.70 5.39 5.11 ns

1.8 V

LVCMOS

8 mA 8 High 5 – 0.97 1.97 0.18 1.01 0.66 2.02 1.76 2.46 2.66 5.61 5.36 ns

1.5 V

LVCMOS

4 mA 4 High 5 – 0.97 2.25 0.18 1.18 0.66 2.30 2.00 2.53 2.68 5.89 5.59 ns

3.3 V PCI Per PCI

spec

– High 10 25 2 0.97 1.97 0.18 0.73 0.66 2.01 1.50 2.36 2.79 5.61 5.10 ns

3.3 V

PCI-X

Per PCI-

X spec

– High 10 25 2 0.97 1.97 0.19 0.70 0.66 2.01 1.50 2.36 2.79 5.61 5.10 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive

strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

3. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-12 on page 2-78 for

connectivity. This resistor is not required during normal operation.

4. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-31

Table 2-33 • Summary of I/O Timing Characteristics—Software Default Settings, Std. Speed Grade,

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI (per

standard)

Applicable to Standard I/O Banks

I/O Standard

Drive Strength)

Equivalent Software Default

Drive Strength Option1 (mA)

Slew Rate

Capacitive Load (pF)

External Resistor ()

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

Units

3.3 V

LVTTL /

3.3 V

LVCMOS

8 mA 8 High 5 – 0.97 1.85 0.18 0.83 0.66 1.89 1.46 1.96 2.26 ns

3.3 V

LVCMOS

Wide

Range2

100 µA 8 High 5 – 0.97 2.62 0.18 1.17 0.66 2.63 2.02 2.79 3.17 ns

2.5 V

LVCMOS

8 mA 8 High 5 – 0.97 1.88 0.18 1.04 0.66 1.92 1.63 1.95 2.15 ns

1.8 V

LVCMOS

4 mA 4 High 5 – 0.97 2.18 0.18 0.98 0.66 2.22 1.93 1.97 2.06 ns

1.5 V

LVCMOS

2 mA 2 High 5 – 0.97 2.51 0.18 1.14 0.66 2.56 2.21 1.99 2.03 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive

strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-32 Revision 23

Table 2-34 • Summary of I/O Timing Characteristics—Software Default Settings, Std. Speed Grade,

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI (per

standard)

Applicable to Advanced I/O Banks

I/O Standard

Drive Strength

Equivalent Software Default

Drive Strength Option1

Slew Rate

Capacitive Load (pF)

External Resistor ()

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

tZLS (ns)

tZHS (ns)

Units

3.3 V

LVTTL /

3.3 V

LVCMOS

12 mA 12 mA High 5 – 1.55 2.67 0.26 0.98 1.10 2.71 2.18 3.25 3.93 8.50 7.97 ns

3.3 V

LVCMOS

Wide

Range2

100 µA 12 mA High 5 – 1.55 3.73 0.26 1.32 1.10 3.73 2.91 4.51 5.43 9.52 8.69 ns

2.5 V

LVCMOS

12 mA 12 mA High 5 – 1.55 2.64 0.26 1.20 1.10 2.67 2.29 3.30 3.79 8.46 8.08 ns

1.8 V

LVCMOS

12 mA 12 mA High 5 – 1.55 2.72 0.26 1.11 1.10 2.76 2.43 3.58 4.19 8.55 8.22 ns

1.5 V

LVCMOS

12 mA 12 mA High 5 – 1.55 2.96 0.26 1.27 1.10 3.00 2.70 3.75 4.23 8.78 8.48 ns

1.2 V

LVCMOS

2 mA 2 mA High 5 – 1.55 3.60 0.26 1.60 1.10 3.47 3.36 3.93 3.65 9.26 9.14 ns

1.2 V

LVCMOS

Wide

Range3

100 µA 2 mA High 5 – 1.55 3.60 0.26 1.60 1.10 3.47 3.36 3.93 3.65 9.26 9.14 ns

3.3 V PCI Per PCI

spec

– High 10 2521.55 2.91 0.26 0.86 1.10 2.95 2.29 3.25 3.93 8.74 8.08 ns

3.3 V

PCI-X

Per

PCI-X

spec

– High 10 2521.55 2.91 0.25 0.86 1.10 2.95 2.29 3.25 3.93 8.74 8.08 ns

LVDS 24 mA – High – – 1.55 2.27 0.25 1.57 – – – – – – – ns

LVPECL 24 mA – High – – 1.55 2.24 0.25 1.38 – – – – – – – ns

Notes:

1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is

±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the

IBIS models.

2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

3. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification

4. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-12 on page 2-78 for

connectivity. This resistor is not required during normal operation.

5. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-33

Table 2-35 • Summary of I/O Timing Characteristics—Software Default Settings, Std. Speed Grade,

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI (per

standard)

Applicable to Standard Plus I/O Banks

I/O Standard

Drive Strength

Equivalent Software Default

Drive Strength Option1 (mA)

Slew Rate

Capacitive Load (pF)

External Resistor ()

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

tZLS (ns)

tZHS (ns)

Units

3.3 V

LVTTL /

3.3 V

LVCMOS

12 mA 12 High 5 – 1.55 2.31 0.26 0.97 1.10 2.34 1.86 2.93 3.64 8.12 7.65 ns

3.3 V

LVCMOS

Wide

Range2

100 µA 12 High 5 – 1.55 3.20 0.26 1.32 1.10 3.20 2.52 4.01 4.97 8.99 8.31 ns

2.5 V

LVCMOS

12 mA 12 High 5 – 1.55 2.29 0.26 1.19 1.10 2.32 1.94 2.94 3.52 8.10 7.73 ns

1.8 V

LVCMOS

8 mA 8 High 5 – 1.55 2.43 0.26 1.11 1.10 2.47 2.16 2.99 3.39 8.25 7.94 ns

1.5 V

LVCMOS

4 mA 4 High 5 – 1.55 2.68 0.26 1.27 1.10 2.72 2.39 3.07 3.37 8.50 8.18 ns

1.2 V

LVCMOS

2 mA 2 High 5 – 1.55 3.22 0.26 1.59 1.10 3.11 2.78 3.29 3.48 8.90 8.57 ns

1.2 V

LVCMOS

Wide

Range3

100 µA 2 High 5 – 1.55 3.22 0.26 1.59 1.10 3.11 2.78 3.29 3.48 8.90 8.57 ns

3.3 V PCI Per

PCI

spec

– High 10 252 1.55 2.53 0.26 0.84 1.10 2.57 1.98 2.93 3.64 8.35 7.76 ns

3.3 V

PCI-X

Per

PCI-X

spec

– High 10 252 1.55 2.53 0.25 0.85 1.10 2.57 1.98 2.93 3.64 8.35 7.76 ns

Notes:

1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is

±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to

the IBIS models.

2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

3. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification

4. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-12 on page 2-78

for connectivity. This resistor is not required during normal operation.

5. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-34 Revision 23

Table 2-36 • Summary of I/O Timing Characteristics—Software Default Settings, Std. Speed Grade,

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI (per

standard)

Applicable to Standard I/O Banks

I/O Standard

Drive Strength

Equivalent Software Default

Drive Strength Option1 (mA)

Slew Rate

Capacitive Load (pF)

External Resistor ()

tDOUT (ns)

tDP (ns)

tDIN (ns)

tPY (ns)

tEOUT (ns)

tZL (ns)

tZH (ns)

tLZ (ns)

tHZ (ns)

Units

3.3 V

LVTTL /

3.3 V

LVCMOS

8 mA 8 High 5 – 1.55 2.38 0.26 0.94 1.10 2.41 1.92 2.40 2.96 ns

3.3 V

LVCMOS

Wide

Range3

100 µA 8 High 5 – 1.55 3.33 0.26 1.29 1.10 3.33 2.62 3.34 4.07 ns

2.5 V

LVCMOS

8 mA 8 High 5 – 1.55 2.39 0.26 1.15 1.10 2.42 2.05 2.38 2.80 ns

1.8 V

LVCMOS

4 mA 4 High 5 – 1.55 2.60 0.26 1.08 1.10 2.64 2.33 2.38 2.62 ns

1.5 V

LVCMOS

2 mA 2 High 5 – 1.55 2.92 0.26 1.22 1.10 2.96 2.60 2.40 2.56 ns

1.2 V

LVCMOS

1 mA 1 High 5 – 1.55 3.59 0.26 1.53 1.10 3.47 3.06 2.51 2.49 ns

1.2 V

LVCMOS

Wide

Range3

100 µA 1 High 5 – 1.55 3.59 0.26 1.53 1.10 3.47 3.06 2.51 2.49 ns

Notes:

1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is

±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to

the IBIS models.

2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification.

3. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification

4. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-35

Detailed I/O DC Characteristics

Table 2-37 • Input Capacitance

Symbol Definition Conditions Min. Max. Units

CIN Input capacitance VIN = 0, f = 1.0 MHz 8 pF

CINCLK Input capacitance on the clock pin VIN = 0, f = 1.0 MHz 8 pF

Table 2-38 • I/O Output Buffer Maximum Resistances1

Applicable to Advanced I/O Banks

Standard Drive Strength

RPULL-DOWN

()2

RPULL-UP

()3

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300

4 mA 100 300

6 mA 50 150

8 mA 50 150

12 mA 25 75

16 mA 17 50

24 mA 11 33

3.3 V LVCMOS Wide Range 100 A Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS 2 mA 100 200

4 mA 100 200

6 mA 50 100

8 mA 50 100

12 mA 25 50

16 mA 20 40

1.5 V LVCMOS 2 mA 200 224

4 mA 100 112

6 mA 67 75

8 mA 33 37

12 mA 33 37

1.2 V LVCMOS42 mA 158 164

1.2 V LVCMOS Wide Range4100 A Same as regular 1.2 V LVCMOS Same as regular 1.2 V LVCMOS

3.3 V PCI/PCI-X Per PCI/PCI-X

specification

25 75

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located at http://www.microsemi.com/soc/download/ibis/default.aspx.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

4. Applicable to IGLOO V2 Devices operating at VCCI  VCC

IGLOO DC and Switching Characteristics

2-36 Revision 23

Table 2-39 • I/O Output Buffer Maximum Resistances1

Applicable to Standard Plus I/O Banks

Standard Drive Strength

RPULL-DOWN

()2

RPULL-UP

()3

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300

4 mA 100 300

6 mA 50 150

8 mA 50 150

12 mA 25 75

16 mA 25 75

3.3 V LVCMOS Wide Range 100 A Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS 2 mA 100 200

4 mA 100 200

6 mA 50 100

8 mA 50 100

12 mA 25 50

1.8 V LVCMOS 2 mA 200 225

4 mA 100 112

6 mA 50 56

8 mA 50 56

1.5 V LVCMOS 2 mA 200 224

4 mA 100 112

1.2 V LVCMOS42 mA 158 164

1.2 V LVCMOS Wide Range4100 A Same as regular 1.2 V LVCMOS Same as regular 1.2 V LVCMOS

3.3 V PCI/PCI-X Per PCI/PCI-X

specification

25 75

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located at http://www.microsemi.com/soc/download/ibis/default.aspx.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

4. Applicable to IGLOO V2 Devices operating at VCCI VCC

IGLOO Low Power Flash FPGAs

Revision 23 2-37

Table 2-40 • I/O Output Buffer Maximum Resistances1

Applicable to Standard I/O Banks

Standard Drive Strength

RPULL-DOWN

()2

RPULL-UP

()3

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300

4 mA 100 300

6 mA 50 150

8 mA 50 150

3.3 V LVCMOS Wide Range 100 A Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS 2 mA 100 200

4 mA 100 200

6 mA 50 100

8 mA 50 100

1.8 V LVCMOS 2 mA 200 225

4 mA 100 112

1.5 V LVCMOS 2 mA 200 224

1.2 V LVCMOS 1 mA 158 164

1.2 V LVCMOS Wide Range4100 A Same as regular 1.2 V LVCMOS Same as regular 1.2 V LVCMOS

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located at http://www.microsemi.com/soc/download/ibis/default.aspx.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

Table 2-41 • I/O Weak Pull-Up/Pull-Down Resistances

Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values

VCCI

R(WEAK PULL-UP)1

()

R(WEAK PULL-DOWN)2

()

Min. Max. Min. Max.

3.3 V 10 K 45 K 10 K 45 K

3.3 V Wide Range I/Os 10 K 45 K 10 K 45 K

2.5 V 11 K 55 K 12 K 74 K

1.8 V 18 K 70 K 17 K 110 K

1.5 V 19 K 90 K 19 K 140 K

1.2 V 25 K 110 K 25 K 150 K

1.2 V Wide Range I/Os 19 K 110 K 19 K 150 K

Notes:

1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN)

2. R(WEAK PULLDOWN-MAX) = (VOLspec) / I(WEAK PULLDOWN-MIN)

IGLOO DC and Switching Characteristics

2-38 Revision 23

Table 2-42 • I/O Short Currents IOSH/IOSL

Applicable to Advanced I/O Banks

Drive Strength IOSL (mA)* IOSH (mA)*

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 25 27

4 mA 25 27

6 mA 51 54

8 mA 51 54

12 mA 103 109

16 mA 132 127

24 mA 268 181

3.3 V LVCMOS Wide Range 100 A Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS 2 mA 16 18

4 mA 16 18

6 mA 32 37

8 mA 32 37

12 mA 65 74

16 mA 83 87

24 mA 169 124

1.8 V LVCMOS 2 mA 9 11

4 mA 17 22

6 mA 35 44

8 mA 45 51

12 mA 91 74

16 mA 91 74

1.5 V LVCMOS 2 mA 13 16

4 mA 25 33

6 mA 32 39

8 mA 66 55

12 mA 66 55

1.2 V LVCMOS 2 mA 20 26

1.2 V LVCMOS Wide Range 100 A20 26

3.3 V PCI/PCI-X Per PCI/PCI-X

specification

103 109

Note: *TJ = 100°C

IGLOO Low Power Flash FPGAs

Revision 23 2-39

Table 2-43 • I/O Short Currents IOSH/IOSL

Applicable to Standard Plus I/O Banks

Drive Strength IOSL (mA)* IOSH (mA)*

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 25 27

4 mA 25 27

6 mA 51 54

8 mA 51 54

12 mA 103 109

16 mA 103 109

3.3 V LVCMOS Wide Range 100 A Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS 2 mA 16 18

4 mA 16 18

6 mA 32 37

8 mA 32 37

12 mA 65 74

1.8 V LVCMOS 2 mA 9 11

4 mA 17 22

6 mA 35 44

8 mA 35 44

1.5 V LVCMOS 2 mA 13 16

4 mA 25 33

1.2 V LVCMOS 2 mA 20 26

1.2 V LVCMOS Wide Range 100 A20 26

3.3 V PCI/PCI-X Per PCI/PCI-X

specification

103 109

Note: *TJ = 100°C

IGLOO DC and Switching Characteristics

2-40 Revision 23

The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The

reliability data below is based on a 3.3 V, 12 mA I/O setting, which is the worst case for this type of

analysis.

For example, at 100°C, the short current condition would have to be sustained for more than six months

to cause a reliability concern. The I/O design does not contain any short circuit protection, but such

protection would only be needed in extremely prolonged stress conditions.

Table 2-44 • I/O Short Currents IOSH/IOSL

Applicable to Standard I/O Banks

Drive Strength IOSL (mA)* IOSH (mA)*

3.3 V LVTTL / 3.3 V LVCMOS 2 mA 25 27

4 mA 25 27

6 mA 51 54

8 mA 51 54

3.3 V LVCMOS Wide Range 100 A Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS 2 mA 16 18

4 mA 16 18

6 mA 32 37

8 mA 32 37

1.8 V LVCMOS 2 mA 9 11

4 mA 17 22

1.5 V LVCMOS 2 mA 13 16

1.2 V LVCMOS 1 mA 20 26

1.2 V LVCMOS Wide Range 100 A20 26

Note: *TJ = 100°C

Table 2-45 • Duration of Short Circuit Event before Failure

Temperature Time before Failure

–40°C > 20 years

–20°C > 20 years

0°C > 20 years

25°C > 20 years

70°C 5 years

85°C 2 years

100°C 6 months

Table 2-46 • I/O Input Rise Time, Fall Time, and Related I/O Reliability1

Input Buffer

Input Rise/Fall Time

(min.)

Input Rise/Fall Time

(max.) Reliability

LVTTL/LVCMOS No requirement 10 ns * 20 years (100°C)

LVDS/B-LVDS/M-LVDS/

LVPECL

No requirement 10 ns * 10 years (100°C)

Note: The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the

noise is low, then the rise time and fall time of input buffers can be increased beyond the

maximum value. The longer the rise/fall times, the more susceptible the input signal is to the

board noise. Microsemi recommends signal integrity evaluation/characterization of the system to

ensure that there is no excessive noise coupling into input signals.

IGLOO Low Power Flash FPGAs

Revision 23 2-41

Single-Ended I/O Characteristics

3.3 V LVTTL / 3.3 V LVCMOS

Low-Voltage Transistor–Transistor Logic (LVTTL) is a general-purpose standard (EIA/JESD) for 3.3 V

applications. It uses an LVTTL input buffer and push-pull output buffer. Furthermore, all LVCMOS 3.3 V

software macros comply with LVCMOS 3.3 V wide range as specified in the JESD8a specification.

Table 2-47 • Minimum and Maximum DC Input and Output Levels

Applicable to Advanced I/O Banks

3.3 V LVTTL /

3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.8 2 3.6 0.4 2.4 2 2 25 27 10 10

4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 25 27 10 10

6 mA –0.3 0.8 2 3.6 0.4 2.4 6 6 51 54 10 10

8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 51 54 10 10

12 mA –0.3 0.8 2 3.6 0.4 2.4 12 12 103 109 10 10

16 mA –0.3 0.8 2 3.6 0.4 2.4 16 16 132 127 10 10

24 mA –0.3 0.8 2 3.6 0.4 2.4 24 24 268 181 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Table 2-48 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard Plus I/O Banks

3.3 V LVTTL /

3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.8 2 3.6 0.4 2.4 2 2 25 27 10 10

4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 25 27 10 10

6 mA –0.3 0.8 2 3.6 0.4 2.4 6 6 51 54 10 10

8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 51 54 10 10

12 mA –0.3 0.8 2 3.6 0.4 2.4 12 12 103 109 10 10

16 mA –0.3 0.8 2 3.6 0.4 2.4 16 16 103 109 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

IGLOO DC and Switching Characteristics

2-42 Revision 23

Table 2-49 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard I/O Banks

3.3 V LVTTL /

3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.8 2 3.6 0.4 2.4 2 2 25 27 10 10

4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 25 27 10 10

6 mA –0.3 0.8 2 3.6 0.4 2.4 6 6 51 54 10 10

8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 51 54 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-7 • AC Loading

Table 2-50 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

03.31.45

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

Test Point

Enable Path

Datapath 5 pF

R = 1 k R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

5 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

IGLOO Low Power Flash FPGAs

Revision 23 2-43

Timing Characteristics

Applies to 1.5 V DC Core Voltage

Table 2-51 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 4.47 0.18 0.85 0.66 4.56 3.89 2.24 2.19 8.15 7.48 ns

6 mA Std. 0.97 3.74 0.18 0.85 0.66 3.82 3.37 2.49 2.63 7.42 6.96 ns

8 mA Std. 0.97 3.74 0.18 0.85 0.66 3.82 3.37 2.49 2.63 7.42 6.96 ns

12 mA Std. 0.97 3.23 0.18 0.85 0.66 3.30 2.98 2.66 2.91 6.89 6.57 ns

16 mA Std. 0.97 3.08 0.18 0.85 0.66 3.14 2.89 2.70 2.99 6.74 6.48 ns

24 mA Std. 0.97 3.00 0.18 0.85 0.66 3.06 2.91 2.74 3.27 6.66 6.50 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-52 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 2.73 0.18 0.85 0.66 2.79 2.22 2.25 2.32 6.38 5.82 ns

6 mA Std. 0.97 2.32 0.18 0.85 0.66 2.37 1.85 2.50 2.76 5.96 5.45 ns

8 mA Std. 0.97 2.32 0.18 0.85 0.66 2.37 1.85 2.50 2.76 5.96 5.45 ns

12 mA Std. 0.97 2.09 0.18 0.85 0.66 2.14 1.68 2.67 3.05 5.73 5.27 ns

16 mA Std. 0.97 2.05 0.18 0.85 0.66 2.10 1.64 2.70 3.12 5.69 5.24 ns

24 mA Std. 0.97 2.07 0.18 0.85 0.66 2.12 1.60 2.75 3.41 5.71 5.20 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-53 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 3.94 0.18 0.85 0.66 4.02 3.46 1.98 2.03 7.62 7.05 ns

6 mA Std. 0.97 3.24 0.18 0.85 0.66 3.31 2.99 2.21 2.42 6.90 6.59 ns

8 mA Std. 0.97 3.24 0.18 0.85 0.66 3.31 2.99 2.21 2.42 6.90 6.59 ns

12 mA Std. 0.97 2.76 0.18 0.85 0.66 2.82 2.63 2.36 2.68 6.42 6.22 ns

16 mA Std. 0.97 2.76 0.18 0.85 0.66 2.82 2.63 2.36 2.68 6.42 6.22 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-44 Revision 23

Table 2-54 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 2.32 0.18 0.85 0.66 2.37 1.90 1.98 2.13 5.96 5.49 ns

6 mA Std. 0.97 1.94 0.18 0.85 0.66 1.99 1.57 2.20 2.53 5.58 5.16 ns

8 mA Std. 0.97 1.94 0.18 0.85 0.66 1.99 1.57 2.20 2.53 5.58 5.16 ns

12 mA Std. 0.97 1.75 0.18 0.85 0.66 1.79 1.40 2.36 2.79 5.38 4.99 ns

16 mA Std. 0.97 1.75 0.18 0.85 0.66 1.79 1.40 2.36 2.79 5.38 4.99 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-55 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.97 3.80 0.18 0.83 0.66 3.88 3.41 1.74 1.78 ns

4 mA Std. 0.97 3.80 0.18 0.83 0.66 3.88 3.41 1.74 1.78 ns

6 mA Std. 0.97 3.15 0.18 0.83 0.66 3.21 2.94 1.96 2.17 ns

8 mA Std. 0.97 3.15 0.18 0.83 0.66 3.21 2.94 1.96 2.17 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-56 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.97 2.19 0.18 0.83 0.66 2.24 1.79 1.74 1.87 ns

4 mA Std. 0.97 2.19 0.18 0.83 0.66 2.24 1.79 1.74 1.87 ns

6 mA Std. 0.97 1.85 0.18 0.83 0.66 1.89 1.46 1.96 2.26 ns

8 mA Std. 0.97 1.85 0.18 0.83 0.66 1.89 1.46 1.96 2.26 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-45

Applies to 1.2 V DC Core Voltage

Table 2-57 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 5.12 0.26 0.98 1.10 5.20 4.46 2.81 3.02 10.99 10.25 ns

6 mA Std. 1.55 4.38 0.26 0.98 1.10 4.45 3.93 3.07 3.48 10.23 9.72 ns

8 mA Std. 1.55 4.38 0.26 0.98 1.10 4.45 3.93 3.07 3.48 10.23 9.72 ns

12 mA Std. 1.55 3.85 0.26 0.98 1.10 3.91 3.53 3.24 3.77 9.69 9.32 ns

16 mA Std. 1.55 3.69 0.26 0.98 1.10 3.75 3.44 3.28 3.84 9.54 9.23 ns

24 mA Std. 1.55 3.61 0.26 0.98 1.10 3.67 3.46 3.33 4.13 9.45 9.24 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-58 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 3.33 0.26 0.98 1.10 3.38 2.75 2.82 3.18 9.17 8.54 ns

6 mA Std. 1.55 2.91 0.26 0.98 1.10 2.95 2.37 3.07 3.64 8.73 8.15 ns

8 mA Std. 1.55 2.91 0.26 0.98 1.10 2.95 2.37 3.07 3.64 8.73 8.15 ns

12 mA Std. 1.55 2.67 0.26 0.98 1.10 2.71 2.18 3.25 3.93 8.50 7.97 ns

16 mA Std. 1.55 2.63 0.26 0.98 1.10 2.67 2.14 3.28 4.01 8.45 7.93 ns

24 mA Std. 1.55 2.65 0.26 0.98 1.10 2.69 2.10 3.33 4.31 8.47 7.89 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-59 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 4.56 0.26 0.97 1.10 4.63 3.98 2.54 2.83 10.42 9.76 ns

6 mA Std. 1.55 3.84 0.26 0.97 1.10 3.90 3.50 2.77 3.24 9.69 9.29 ns

8 mA Std. 1.55 3.84 0.26 0.97 1.10 3.90 3.50 2.77 3.24 9.69 9.29 ns

12 mA Std. 1.55 3.35 0.26 0.97 1.10 3.40 3.13 2.93 3.51 9.19 8.91 ns

16 mA Std. 1.55 3.35 0.26 0.97 1.10 3.40 3.13 2.93 3.51 9.19 8.91 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-46 Revision 23

Table 2-60 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 2.89 0.26 0.97 1.10 2.93 2.38 2.53 2.96 8.72 8.17 ns

6 mA Std. 1.55 2.50 0.26 0.97 1.10 2.54 2.04 2.77 3.37 8.33 7.82 ns

8 mA Std. 1.55 2.50 0.26 0.97 1.10 2.54 2.04 2.77 3.37 8.33 7.82 ns

12 mA Std. 1.55 2.31 0.26 0.97 1.10 2.34 1.86 2.93 3.64 8.12 7.65 ns

16 mA Std. 1.55 2.31 0.26 0.97 1.10 2.34 1.86 2.93 3.64 8.12 7.65 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-61 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 1.55 4.39 0.26 0.94 1.10 4.46 3.91 2.17 2.44 ns

4 mA Std. 1.55 4.39 0.26 0.94 1.10 4.46 3.91 2.17 2.44 ns

6 mA Std. 1.55 3.72 0.26 0.94 1.10 3.78 3.43 2.40 2.85 ns

8 mA Std. 1.55 3.72 0.26 0.94 1.10 3.78 3.43 2.40 2.85 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-62 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 1.55 2.74 0.26 0.94 1.10 2.78 2.26 2.17 2.55 ns

4 mA Std. 1.55 2.74 0.26 0.94 1.10 2.78 2.26 2.17 2.55 ns

6 mA Std. 1.55 2.38 0.26 0.94 1.10 2.41 1.92 2.40 2.96 ns

8 mA Std. 1.55 2.38 0.26 0.94 1.10 2.41 1.92 2.40 2.96 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-47

3.3 V LVCMOS Wide Range

Table 2-63 • Minimum and Maximum DC Input and Output Levels for LVCMOS 3.3 V Wide Range

Applicable to Advanced I/O Banks

3.3 V LVCMOS Wide Range VIL VIH VOL VOH IOL IOH IOSL IOSH IIL2IIH3

Drive

Strength

Equivalent

Software

Default Drive

Strength

Option1

Min.

Max.

Min.

Max.

Min.

VµAµA

Max.

mA4

Max.

mA4µA5µA5

100 µA 2 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10

100 µA 4 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10

100 µA 6 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10

100 µA 8 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10

100 µA 12 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 103 109 10 10

100 µA 16 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 132 127 10 10

100 µA 24 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 268 181 10 10

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

4. Currents are measured at 100°C junction temperature and maximum voltage.

5. Currents are measured at 85°C junction temperature.

6. Software default selection highlighted in gray.

IGLOO DC and Switching Characteristics

2-48 Revision 23

Table 2-64 • Minimum and Maximum DC Input and Output Levels for LVCMOS 3.3 V Wide Range

Applicable to Standard Plus I/O Banks

3.3 V LVCMOS Wide Range VIL VIH VOL VOH IOL IOH IOSL IOSH IIL2IIH3

Drive

Strength

Equivalent

Software

Default Drive

Strength

Option1

Min.

Max.

Min.

Max.

Min.

VµAµA

Max.

mA4

Max.

mA4µA5µA5

100 µA 2 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10

100 µA 4 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10

100 µA 6 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10

100 µA 8 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10

100 µA 12 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 103 109 10 10

100 µA 16 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 103 109 10 10

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

4. Currents are measured at 100°C junction temperature and maximum voltage.

5. Currents are measured at 85°C junction temperature.

6. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-49

Table 2-65 • Minimum and Maximum DC Input and Output Levels for LVCMOS 3.3 V Wide Range

Applicable to Standard I/O Banks

3.3 V LVCMOS Wide Range VIL VIH VOL VOH IOL IOH IOSL IOSH IIL2IIH3

Drive

Strength

Equivalent

Software

Default Drive

Strength

Option1

Min.

Max.

Min.

Max.

Min.

VµAµA

Max.

mA4

Max.

mA4µA5µA5

100 µA 2 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10

100 µA 4 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10

100 µA 6 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10

100 µA 8 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

4. Currents are measured at 100°C junction temperature and maximum voltage.

5. Currents are measured at 85°C junction temperature.

6. Software default selection highlighted in gray.

Table 2-66 • 3.3 V LVCMOS Wide Range AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

03.31.45

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

IGLOO DC and Switching Characteristics

2-50 Revision 23

Timing Characteristics

Applies to 1.5 V DC Core Voltage

Table 2-67 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V

Applicable to Advanced Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

100 µA 4 mA Std. 0.97 6.61 0.18 1.19 0.66 6.63 5.63 3.15 2.98 10.22 9.23 ns

100 µA 6 mA Std. 0.97 5.49 0.18 1.19 0.66 5.51 4.84 3.54 3.66 9.10 8.44 ns

100 µA 8 mA Std. 0.97 5.49 0.18 1.19 0.66 5.51 4.84 3.54 3.66 9.10 8.44 ns

100 µA 12 mA Std. 0.97 4.69 0.18 1.19 0.66 4.71 4.25 3.80 4.10 8.31 7.85 ns

100 µA 16 mA Std. 0.97 4.46 0.18 1.19 0.66 4.48 4.11 3.86 4.21 8.07 7.71 ns

100 µA 24 mA Std. 0.97 4.34 0.18 1.19 0.66 4.36 4.14 3.93 4.64 7.95 7.74 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-68 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V

Applicable to Advanced Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

100 µA 4 mA Std. 0.97 3.92 0.18 1.19 0.66 3.94 3.10 3.16 3.17 7.54 6.70 ns

100 µA 6 mA Std. 0.97 3.28 0.18 1.19 0.66 3.30 2.54 3.54 3.86 6.90 6.14 ns

100 µA 8 mA Std. 0.97 3.28 0.18 1.19 0.66 3.30 2.54 3.54 3.86 6.90 6.14 ns

100 µA 12 mA Std. 0.97 2.93 0.18 1.19 0.66 2.95 2.27 3.81 4.30 6.54 5.87 ns

100 µA 16 mA Std. 0.97 2.87 0.18 1.19 0.66 2.89 2.22 3.86 4.41 6.49 5.82 ns

100 µA 24 mA Std. 0.97 2.90 0.18 1.19 0.66 2.92 2.16 3.94 4.86 6.51 5.75 ns

Notes:

1. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

2. Software default selection highlighted in gray.

3. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

IGLOO Low Power Flash FPGAs

Revision 23 2-51

Table 2-69 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V

Applicable to Standard Plus Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS

Units

100 µA 4 mA Std. 0.97 5.84 0.18 1.20 0.66 5.86 5.04 2.74 2.71 9.46 8.64 ns

100 µA 6 mA Std. 0.97 4.76 0.18 1.20 0.66 4.78 4.33 3.09 3.33 8.37 7.93 ns

100 µA 8 mA Std. 0.97 4.76 0.18 1.20 0.66 4.78 4.33 3.09 3.33 8.37 7.93 ns

100 µA 12 mA Std. 0.97 4.02 0.18 1.20 0.66 4.04 3.78 3.33 3.73 7.64 7.37 ns

100 µA 16 mA Std. 0.97 4.02 0.18 1.20 0.66 4.04 3.78 3.33 3.73 7.64 7.37 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-70 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V

Applicable to Standard Plus Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

100 µA 4 mA Std. 0.97 3.33 0.18 1.20 0.66 3.35 2.68 2.73 2.88 6.94 6.27 ns

100 µA 6 mA Std. 0.97 2.75 0.18 1.20 0.66 2.77 2.17 3.08 3.50 6.36 5.77 ns

100 µA 8 mA Std. 0.97 2.75 0.18 1.20 0.66 2.77 2.17 3.08 3.50 6.36 5.77 ns

100 µA 12 mA Std. 0.97 2.45 0.18 1.20 0.66 2.47 1.92 3.33 3.90 6.06 5.51 ns

100 µA 16 mA Std. 0.97 2.45 0.18 1.20 0.66 2.47 1.92 3.33 3.90 6.06 5.51 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

3. Software default selection highlighted in gray.

IGLOO DC and Switching Characteristics

2-52 Revision 23

Table 2-71 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V

Applicable to Standard Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

100 µA 2 mA Std. 0.97 5.64 0.18 1.17 0.66 5.65 4.98 2.45 2.42 ns

100 µA 4 mA Std. 0.97 5.64 0.18 1.17 0.66 5.65 4.98 2.45 2.42 ns

100 µA 6 mA Std. 0.97 4.63 0.18 1.17 0.66 4.64 4.26 2.80 3.02 ns

100 µA 8 mA Std. 0.97 4.63 0.18 1.17 0.66 4.64 4.26 2.80 3.02 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-72 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V

Applicable to Standard Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

100 µA 2 mA 0.97 3.16 0.18 1.17 0.66 3.17 2.53 2.45 2.56 0.97 ns

100 µA 4 mA 0.97 3.16 0.18 1.17 0.66 3.17 2.53 2.45 2.56 0.97 ns

100 µA 6 mA 0.97 2.62 0.18 1.17 0.66 2.63 2.02 2.79 3.17 0.97 ns

100 µA 8 mA 0.97 2.62 0.18 1.17 0.66 2.63 2.02 2.79 3.17 0.97 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

3. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-53

Applies to 1.2 V DC Core Voltage

Table 2-73 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7 V

Applicable to Advanced Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

100 µA 4 mA Std. 1.55 7.52 0.26 1.32 1.10 7.52 6.38 3.84 4.02 13.31 12.16 ns

100 µA 6 mA Std. 1.55 6.37 0.26 1.32 1.10 6.37 5.57 4.23 4.73 12.16 11.35 ns

100 µA 8 mA Std. 1.55 6.37 0.26 1.32 1.10 6.37 5.57 4.23 4.73 12.16 11.35 ns

100 µA 12 mA Std. 1.55 5.55 0.26 1.32 1.10 5.55 4.96 4.50 5.18 11.34 10.75 ns

100 µA 16 mA Std. 1.55 5.32 0.26 1.32 1.10 5.32 4.82 4.56 5.29 11.10 10.61 ns

100 µA 24 mA Std. 1.55 5.19 0.26 1.32 1.10 5.19 4.85 4.63 5.74 10.98 10.63 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-74 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7

Applicable to Advanced Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

100 µA 4 mA Std. 1.55 4.75 0.26 1.32 1.10 4.75 3.77 3.84 4.27 10.54 9.56 ns

100 µA 6 mA Std. 1.55 4.10 0.26 1.32 1.10 4.10 3.19 4.24 4.98 9.88 8.98 ns

100 µA 8 mA Std. 1.55 4.10 0.26 1.32 1.10 4.10 3.19 4.24 4.98 9.88 8.98 ns

100 µA 12 mA Std. 1.55 3.73 0.26 1.32 1.10 3.73 2.91 4.51 5.43 9.52 8.69 ns

100 µA 16 mA Std. 1.55 3.67 0.26 1.32 1.10 3.67 2.85 4.57 5.55 9.46 8.64 ns

100 µA 24 mA Std. 1.55 3.70 0.26 1.32 1.10 3.70 2.79 4.65 6.01 9.49 8.58 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

3. Software default selection highlighted in gray.

IGLOO DC and Switching Characteristics

2-54 Revision 23

Table 2-75 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7

Applicable to Standard Plus Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS

Units

100 µA 4 mA Std. 1.55 6.69 0.26 1.32 1.10 6.69 5.73 3.41 3.72 12.48 11.52 ns

100 µA 6 mA Std. 1.55 5.58 0.26 1.32 1.10 5.58 5.01 3.77 4.35 11.36 10.79 ns

100 µA 8 mA Std. 1.55 5.58 0.26 1.32 1.10 5.58 5.01 3.77 4.35 11.36 10.79 ns

100 µA 12 mA Std. 1.55 4.82 0.26 1.32 1.10 4.82 4.44 4.02 4.76 10.61 10.23 ns

100 µA 16 mA Std. 1.55 4.82 0.26 1.32 1.10 4.82 4.44 4.02 4.76 10.61 10.23 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-76 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7

Applicable to Standard Plus Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

100 µA 4 mA Std. 1.55 4.10 0.26 1.32 1.10 4.10 3.30 3.40 3.92 9.89 9.09 ns

100 µA 6 mA Std. 1.55 3.51 0.26 1.32 1.10 3.51 2.79 3.76 4.56 9.30 8.57 ns

100 µA 8 mA Std. 1.55 3.51 0.26 1.32 1.10 3.51 2.79 3.76 4.56 9.30 8.57 ns

100 µA 12 mA Std. 1.55 3.20 0.26 1.32 1.10 3.20 2.52 4.01 4.97 8.99 8.31 ns

100 µA 16 mA Std. 1.55 3.20 0.26 1.32 1.10 3.20 2.52 4.01 4.97 8.99 8.31 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

3. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-55

Table 2-77 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7

Applicable to Standard Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

100 µA 2 mA Std. 1.55 6.44 0.26 1.29 1.10 6.44 5.64 2.99 3.28 ns

100 µA 4 mA Std. 1.55 6.44 0.26 1.29 1.10 6.44 5.64 2.99 3.28 ns

100 µA 6 mA Std. 1.55 5.41 0.26 1.29 1.10 5.41 4.91 3.35 3.89 ns

100 µA 8 mA Std. 1.55 5.41 0.26 1.29 1.10 5.41 4.91 3.35 3.89 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-78 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7

Applicable to Standard Banks

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Speed

Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

100 µA 2 mA Std. 1.55 3.89 0.26 1.29 1.10 3.89 3.13 2.99 3.45 ns

100 µA 4 mA Std. 1.55 3.89 0.26 1.29 1.10 3.89 3.13 2.99 3.45 ns

100 µA 6 mA Std. 1.55 3.33 0.26 1.29 1.10 3.33 2.62 3.34 4.07 ns

100 µA 8 mA Std. 1.55 3.33 0.26 1.29 1.10 3.33 2.62 3.34 4.07 ns

Notes:

1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ± 100 µA. Drive

strengths displayed in software are supported for normal range only. For a detailed I/V curve, refer to the IBIS models.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

3. Software default selection highlighted in gray.

IGLOO DC and Switching Characteristics

2-56 Revision 23

2.5 V LVCMOS

Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 2.5 V applications.

Table 2-79 • Minimum and Maximum DC Input and Output Levels

Applicable to Advanced I/O Banks

2.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.7 1.7 2.7 0.7 1.7 2 2 16 18 10 10

4 mA –0.3 0.7 1.7 2.7 0.7 1.7 4 4 16 18 10 10

6 mA –0.3 0.7 1.7 2.7 0.7 1.7 6 6 32 37 10 10

8 mA –0.3 0.7 1.7 2.7 0.7 1.7 8 8 32 37 10 10

12 mA –0.3 0.7 1.7 2.7 0.7 1.7 12 12 65 74 10 10

16 mA –0.3 0.7 1.7 2.7 0.7 1.7 16 16 83 87 10 10

24 mA –0.3 0.7 1.7 2.7 0.7 1.7 24 24 169 124 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Table 2-80 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard Plus I/O Banks

2.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.7 1.7 2.7 0.7 1.7 2 2 16 18 10 10

4 mA –0.3 0.7 1.7 2.7 0.7 1.7 4 4 16 18 10 10

6 mA –0.3 0.7 1.7 2.7 0.7 1.7 6 6 32 37 10 10

8 mA –0.3 0.7 1.7 2.7 0.7 1.7 8 8 32 37 10 10

12 mA –0.3 0.7 1.7 2.7 0.7 1.7 12 12 65 74 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-57

Table 2-81 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard I/O Banks

2.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.7 1.7 3.6 0.7 1.7 2 2 16 18 10 10

4 mA –0.3 0.7 1.7 3.6 0.7 1.7 4 4 16 18 10 10

6 mA –0.3 0.7 1.7 3.6 0.7 1.7 6 6 32 37 10 10

8 mA –0.3 0.7 1.7 3.6 0.7 1.7 8 8 32 37 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-8 • AC Loading

Table 2-82 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

02.51.25

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

Test Point

Enable Path

Datapath 5 pF

R = 1 k R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

5 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

IGLOO DC and Switching Characteristics

2-58 Revision 23

Timing Characteristics

Applies to 1.5 V DC Core Voltage

Table 2-83 • 2.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 4.96 0.18 1.08 0.66 5.06 4.59 2.26 2.00 8.66 8.19 ns

6 mA Std. 0.97 4.15 0.18 1.08 0.66 4.24 3.94 2.54 2.51 7.83 7.53 ns

8 mA Std. 0.97 4.15 0.18 1.08 0.66 4.24 3.94 2.54 2.51 7.83 7.53 ns

12 mA Std. 0.97 3.57 0.18 1.08 0.66 3.65 3.47 2.73 2.84 7.24 7.06 ns

16 mA Std. 0.97 3.39 0.18 1.08 0.66 3.46 3.36 2.78 2.92 7.06 6.95 ns

24 mA Std. 0.97 3.38 0.18 1.08 0.66 3.38 3.38 2.83 3.25 6.98 6.98 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-84 • 2.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 2.77 0.18 1.08 0.66 2.83 2.60 2.26 2.08 6.42 6.19 ns

6 mA Std. 0.97 2.34 0.18 1.08 0.66 2.39 2.08 2.54 2.60 5.99 5.68 ns

8 mA Std. 0.97 2.34 0.18 1.08 0.66 2.39 2.08 2.54 2.60 5.99 5.68 ns

12 mA Std. 0.97 2.09 0.18 1.08 0.66 2.14 1.83 2.73 2.93 5.73 5.43 ns

16 mA Std. 0.97 2.05 0.18 1.08 0.66 2.09 1.78 2.78 3.02 5.69 5.38 ns

24 mA Std. 0.97 2.06 0.18 1.08 0.66 2.10 1.72 2.83 3.35 5.70 5.32 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-85 • 2.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 4.42 0.18 1.08 0.66 4.51 4.10 1.96 1.85 8.10 7.69 ns

6 mA Std. 0.97 3.62 0.18 1.08 0.66 3.70 3.52 2.21 2.32 7.29 7.11 ns

8 mA Std. 0.97 3.62 0.18 1.08 0.66 3.70 3.52 2.21 2.32 7.29 7.11 ns

12 mA Std. 0.97 3.09 0.18 1.08 0.66 3.15 3.09 2.39 2.61 6.74 6.68 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-59

Table 2-86 • 2.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 0.97 2.36 0.18 1.08 0.66 2.41 2.21 1.96 1.92 6.01 5.81 ns

6 mA Std. 0.97 1.97 0.18 1.08 0.66 2.01 1.75 2.21 2.40 5.61 5.34 ns

8 mA Std. 0.97 1.97 0.18 1.08 0.66 2.01 1.75 2.21 2.40 5.61 5.34 ns

12 mA Std. 0.97 1.75 0.18 1.08 0.66 1.79 1.52 2.38 2.70 5.39 5.11 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-87 • 2.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.97 4.27 0.18 1.04 0.66 4.36 4.06 1.71 1.62 ns

4 mA Std. 0.97 4.27 0.18 1.04 0.66 4.36 4.06 1.71 1.62 ns

6 mA Std. 0.97 3.54 0.18 1.04 0.66 3.61 3.48 1.95 2.08 ns

8 mA Std. 0.97 3.54 0.18 1.04 0.66 3.61 3.48 1.95 2.08 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-88 • 2.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.97 2.24 0.18 1.04 0.66 2.29 2.09 1.71 1.68 ns

4 mA Std. 0.97 2.24 0.18 1.04 0.66 2.29 2.09 1.71 1.68 ns

6 mA Std. 0.97 1.88 0.18 1.04 0.66 1.92 1.63 1.95 2.15 ns

8 mA Std. 0.97 1.88 0.18 1.04 0.66 1.92 1.63 1.95 2.15 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-60 Revision 23

Applies to 1.2 V Core Voltage

Table 2-89 • 2.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 5.59 0.26 1.20 1.10 5.68 5.14 2.82 2.80 11.47 10.93 ns

6 mA Std. 1.55 4.76 0.26 1.20 1.10 4.84 4.47 3.10 3.33 10.62 10.26 ns

8 mA Std. 1.55 4.76 0.26 1.20 1.10 4.84 4.47 3.10 3.33 10.62 10.26 ns

12 mA Std. 1.55 4.17 0.26 1.20 1.10 4.23 3.99 3.30 3.67 10.02 9.77 ns

16 mA Std. 1.55 3.98 0.26 1.20 1.10 4.04 3.88 3.34 3.76 9.83 9.66 ns

24 mA Std. 1.55 3.90 0.26 1.20 1.10 3.96 3.90 3.40 4.09 9.75 9.68 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-90 • 2.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 3.33 0.26 1.20 1.10 3.38 3.09 2.82 2.91 9.17 8.88 ns

6 mA Std. 1.55 2.89 0.26 1.20 1.10 2.93 2.56 3.10 3.45 8.72 8.34 ns

8 mA Std. 1.55 2.89 0.26 1.20 1.10 2.93 2.56 3.10 3.45 8.72 8.34 ns

12 mA Std. 1.55 2.64 0.26 1.20 1.10 2.67 2.29 3.30 3.79 8.46 8.08 ns

16 mA Std. 1.55 2.59 0.26 1.20 1.10 2.63 2.24 3.34 3.88 8.41 8.03 ns

24 mA Std. 1.55 2.60 0.26 1.20 1.10 2.64 2.18 3.40 4.22 8.42 7.97 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-91 • 2.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 5.02 0.26 1.19 1.10 5.11 4.60 2.50 2.62 10.89 10.38 ns

6 mA Std. 1.55 4.21 0.26 1.19 1.10 4.27 4.00 2.76 3.10 10.06 9.79 ns

8 mA Std. 1.55 4.21 0.26 1.19 1.10 4.27 4.00 2.76 3.10 10.06 9.79 ns

12 mA Std. 1.55 3.66 0.26 1.19 1.10 3.71 3.55 2.94 3.41 9.50 9.34 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-61

Table 2-92 • 2.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

4 mA Std. 1.55 2.91 0.26 1.19 1.10 2.95 2.66 2.50 2.72 8.74 8.45 ns

6 mA Std. 1.55 2.51 0.26 1.19 1.10 2.54 2.18 2.75 3.21 8.33 7.97 ns

8 mA Std. 1.55 2.51 0.26 1.19 1.10 2.54 2.18 2.75 3.21 8.33 7.97 ns

12 mA Std. 1.55 2.29 0.26 1.19 1.10 2.32 1.94 2.94 3.52 8.10 7.73 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-93 • 2.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 1.55 4.85 0.26 1.15 1.10 4.93 4.55 2.13 2.24 ns

4 mA Std. 1.55 4.85 0.26 1.15 1.10 4.93 4.55 2.13 2.24 ns

6 mA Std. 1.55 4.09 0.26 1.15 1.10 4.16 3.95 2.38 2.71 ns

8 mA Std. 1.55 4.09 0.26 1.15 1.10 4.16 3.95 2.38 2.71 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-94 • 2.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 1.55 2.76 0.26 1.15 1.10 2.80 2.52 2.13 2.32 ns

4 mA Std. 1.55 2.76 0.26 1.15 1.10 2.80 2.52 2.13 2.32 ns

6 mA Std. 1.55 2.39 0.26 1.15 1.10 2.42 2.05 2.38 2.80 ns

8 mA Std. 1.55 2.39 0.26 1.15 1.10 2.42 2.05 2.38 2.80 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-62 Revision 23

1.8 V LVCMOS

Low-voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer.

Table 2-95 • Minimum and Maximum DC Input and Output Levels

Applicable to Advanced I/O Banks

1.8 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 2 2 9 11 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 4 4 17 22 10 10

6 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 6 6 35 44 10 10

8 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 8 8 45 51 10 10

12 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 12 12 91 74 10 10

16 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 16 16 91 74 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Table 2-96 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard Plus I/O Banks

1.8 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 2 2 9 11 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 4 4 17 22 10 10

6 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 6 6 35 44 10 10

8 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.9 0.45 VCCI – 0.45 8 8 35 44 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-63

Timing Characteristics

1.5 V DC Core Voltage

Table 2-97 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard I/O Banks

1.8 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 2 2 9 11 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 4 4 17 22 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-9 • AC Loading

Table 2-98 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

01.80.95

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

Test Point

Enable Path

Datapath 5 pF

R = 1 k R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

5 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

Table 2-99 • 1.8 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 6.38 0.18 1.01 0.66 6.51 5.93 2.33 1.56 10.10 9.53 ns

4 mA Std. 0.97 5.35 0.18 1.01 0.66 5.46 5.04 2.67 2.38 9.05 8.64 ns

6 mA Std. 0.97 4.62 0.18 1.01 0.66 4.71 4.44 2.90 2.79 8.31 8.04 ns

8 mA Std. 0.97 4.37 0.18 1.01 0.66 4.46 4.31 2.95 2.89 8.05 7.90 ns

12 mA Std. 0.97 4.32 0.18 1.01 0.66 4.37 4.32 3.03 3.30 7.97 7.92 ns

16 mA Std. 0.97 4.32 0.18 1.01 0.66 4.37 4.32 3.03 3.30 7.97 7.92 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-64 Revision 23

Table 2-100 • 1.8 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 3.25 0.18 1.01 0.66 3.21 3.25 2.33 1.61 6.80 6.85 ns

4 mA Std. 0.97 2.62 0.18 1.01 0.66 2.68 2.51 2.66 2.46 6.27 6.11 ns

6 mA Std. 0.97 2.31 0.18 1.01 0.66 2.36 2.15 2.90 2.87 5.95 5.75 ns

8 mA Std. 0.97 2.25 0.18 1.01 0.66 2.30 2.08 2.95 2.98 5.89 5.68 ns

12 mA Std. 0.97 2.24 0.18 1.01 0.66 2.29 2.00 3.02 3.40 5.88 5.60 ns

16 mA Std. 0.97 2.24 0.18 1.01 0.66 2.29 2.00 3.02 3.40 5.88 5.60 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-101 • 1.8 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 5.78 0.18 1.01 0.66 5.90 5.32 1.95 1.47 9.49 8.91 ns

4 mA Std. 0.97 4.75 0.18 1.01 0.66 4.85 4.54 2.25 2.21 8.44 8.13 ns

6 mA Std. 0.97 4.07 0.18 1.01 0.66 4.15 3.98 2.46 2.58 7.75 7.57 ns

8 mA Std. 0.97 4.07 0.18 1.01 0.66 4.15 3.98 2.46 2.58 7.75 7.57 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-102 • 1.8 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 2.76 0.18 1.01 0.66 2.79 2.76 1.94 1.51 6.39 6.35 ns

4 mA Std. 0.97 2.25 0.18 1.01 0.66 2.30 2.09 2.24 2.29 5.89 5.69 ns

6 mA Std. 0.97 1.97 0.18 1.01 0.66 2.02 1.76 2.46 2.66 5.61 5.36 ns

8 mA Std. 0.97 1.97 0.18 1.01 0.66 2.02 1.76 2.46 2.66 5.61 5.36 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-103 • 1.8 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.97 5.63 0.18 0.98 0.66 5.74 5.30 1.68 1.24 ns

4 mA Std. 0.97 4.69 0.18 0.98 0.66 4.79 4.52 1.97 1.98 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-65

Table 2-104 • 1.8 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 2.62 0.18 0.98 0.66 2.67 2.59 1.67 1.29 2.62 ns

4 mA Std. 2.18 0.18 0.98 0.66 2.22 1.93 1.97 2.06 2.18 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-66 Revision 23

1.2 V DC Core Voltage

Table 2-105 • 1.8 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 6.97 0.26 1.11 1.10 7.08 6.48 2.87 2.29 12.87 12.27 ns

4 mA Std. 1.55 5.91 0.26 1.11 1.10 6.01 5.57 3.21 3.14 11.79 11.36 ns

6 mA Std. 1.55 5.16 0.26 1.11 1.10 5.24 4.95 3.45 3.55 11.03 10.74 ns

8 mA Std. 1.55 4.90 0.26 1.11 1.10 4.98 4.81 3.50 3.66 10.77 10.60 ns

12 mA Std. 1.55 4.83 0.26 1.11 1.10 4.90 4.83 3.58 4.08 10.68 10.61 ns

16 mA Std. 1.55 4.83 0.26 1.11 1.10 4.90 4.83 3.58 4.08 10.68 10.61 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-106 • 1.8 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 3.73 0.26 1.11 1.10 3.71 3.73 2.86 2.34 9.49 9.51 ns

4 mA Std. 1.55 3.12 0.26 1.11 1.10 3.16 2.97 3.21 3.22 8.95 8.75 ns

6 mA Std. 1.55 2.79 0.26 1.11 1.10 2.83 2.59 3.45 3.65 8.62 8.38 ns

8 mA Std. 1.55 2.73 0.26 1.11 1.10 2.77 2.52 3.50 3.75 8.56 8.30 ns

12 mA Std. 1.55 2.72 0.26 1.11 1.10 2.76 2.43 3.58 4.19 8.55 8.22 ns

16 mA Std. 1.55 2.72 0.26 1.11 1.10 2.76 2.43 3.58 4.19 8.55 8.22 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-107 • 1.8 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 6.32 0.26 1.11 1.10 6.43 5.81 2.47 2.16 12.22 11.60 ns

4 mA Std. 1.55 5.27 0.26 1.11 1.10 5.35 5.01 2.78 2.92 11.14 10.79 ns

6 mA Std. 1.55 4.56 0.26 1.11 1.10 4.64 4.44 3.00 3.30 10.42 10.22 ns

8 mA Std. 1.55 4.56 0.26 1.11 1.10 4.64 4.44 3.00 3.30 10.42 10.22 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-67

Table 2-108 • 1.8 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 3.22 0.26 1.11 1.10 3.26 3.18 2.47 2.20 9.05 8.97 ns

4 mA Std. 1.55 2.72 0.26 1.11 1.10 2.75 2.50 2.78 3.01 8.54 8.29 ns

6 mA Std. 1.55 2.43 0.26 1.11 1.10 2.47 2.16 2.99 3.39 8.25 7.94 ns

8 mA Std. 1.55 2.43 0.26 1.11 1.10 2.47 2.16 2.99 3.39 8.25 7.94 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-109 • 1.8 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 1.55 6.13 0.26 1.08 1.10 6.24 5.79 2.08 1.78 ns

4 mA Std. 1.55 5.17 0.26 1.08 1.10 5.26 4.98 2.38 2.54 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-110 • 1.8 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 3.06 0.26 1.08 1.10 3.10 3.01 2.08 1.83 3.06 ns

4 mA Std. 2.60 0.26 1.08 1.10 2.64 2.33 2.38 2.62 2.60 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-68 Revision 23

1.5 V LVCMOS (JESD8-11)

Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-

purpose 1.5 V applications. It uses a 1.5 V input buffer and a push-pull output buffer.

Table 2-111 • Minimum and Maximum DC Input and Output Levels

Applicable to Advanced I/O Banks

1.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 2 2 13 16 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 4 4 25 33 10 10

6 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 6 6 32 39 10 10

8 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 8 8 66 55 10 10

12 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 12 12 66 55 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Table 2-112 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard Plus I/O Banks

1.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 2 2 13 16 10 10

4 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.575 0.25 * VCCI 0.75 * VCCI 4 4 25 33 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-69

Table 2-113 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard I/O Banks

1.5 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2 13 16 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN <V CCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Figure 2-10 • AC Loading

Table 2-114 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

01.50.755

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

Test Point

Enable Path

Datapath 5 pF

R = 1 k R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

5 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

IGLOO DC and Switching Characteristics

2-70 Revision 23

Timing Characteristics

1.5 V DC Core Voltage

Table 2-115 • 1.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 6.62 0.18 1.17 0.66 6.75 6.06 2.79 2.31 10.35 9.66 ns

4 mA Std. 0.97 5.75 0.18 1.17 0.66 5.86 5.34 3.06 2.78 9.46 8.93 ns

6 mA Std. 0.97 5.43 0.18 1.17 0.66 5.54 5.19 3.12 2.90 9.13 8.78 ns

8 mA Std. 0.97 5.35 0.18 1.17 0.66 5.46 5.20 2.63 3.36 9.06 8.79 ns

12 mA Std. 0.97 5.35 0.18 1.17 0.66 5.46 5.20 2.63 3.36 9.06 8.79 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-116 • 1.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 2.97 0.18 1.17 0.66 3.04 2.90 2.78 2.40 6.63 6.50 ns

4 mA Std. 0.97 2.60 0.18 1.17 0.66 2.65 2.45 3.05 2.88 6.25 6.05 ns

6 mA Std. 0.97 2.53 0.18 1.17 0.66 2.58 2.37 3.11 3.00 6.18 5.96 ns

8 mA Std. 0.97 2.50 0.18 1.17 0.66 2.56 2.27 3.21 3.48 6.15 5.86 ns

12 mA Std. 0.97 2.50 0.18 1.17 0.66 2.56 2.27 3.21 3.48 6.15 5.86 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-117 • 1.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 5.93 0.18 1.18 0.66 6.04 5.46 2.30 2.15 9.64 9.06 ns

4 mA Std. 0.97 5.11 0.18 1.18 0.66 5.21 4.80 2.54 2.58 8.80 8.39 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-118 • 1.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 0.97 2.58 0.18 1.18 0.66 2.64 2.41 2.29 2.24 6.23 6.01 ns

4 mA Std. 0.97 2.25 0.18 1.18 0.66 2.30 2.00 2.53 2.68 5.89 5.59 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-71

Table 2-119 • 1.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.97 5.88 0.18 1.14 0.66 6.00 5.45 2.00 1.94 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-120 • 1.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 0.97 2.51 0.18 1.14 0.66 2.56 2.21 1.99 2.03 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-72 Revision 23

1.2 V DC Core Voltage

Table 2-121 • 1.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 7.17 0.26 1.27 1.10 7.29 6.60 3.33 3.03 13.07 12.39 ns

4 mA Std. 1.55 6.27 0.26 1.27 1.10 6.37 5.86 3.61 3.51 12.16 11.64 ns

6 mA Std. 1.55 5.94 0.26 1.27 1.10 6.04 5.70 3.67 3.64 11.82 11.48 ns

8 mA Std. 1.55 5.86 0.26 1.27 1.10 5.96 5.71 2.83 4.11 11.74 11.50 ns

12 mA Std. 1.55 5.86 0.26 1.27 1.10 5.96 5.71 2.83 4.11 11.74 11.50 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-122 • 1.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 3.44 0.26 1.27 1.10 3.49 3.35 3.32 3.12 9.28 9.14 ns

4 mA Std. 1.55 3.06 0.26 1.27 1.10 3.10 2.89 3.60 3.61 8.89 8.67 ns

6 mA Std. 1.55 2.98 0.26 1.27 1.10 3.02 2.80 3.66 3.74 8.81 8.58 ns

8 mA Std. 1.55 2.96 0.26 1.27 1.10 3.00 2.70 3.75 4.23 8.78 8.48 ns

12 mA Std. 1.55 2.96 0.26 1.27 1.10 3.00 2.70 3.75 4.23 8.78 8.48 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-123 • 1.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 6.43 0.26 1.27 1.10 6.54 5.95 2.82 2.83 12.32 11.74 ns

4 mA Std. 1.55 5.59 0.26 1.27 1.10 5.68 5.27 3.07 3.27 11.47 11.05 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-124 • 1.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Plus Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 3.02 0.26 1.27 1.10 3.07 2.81 2.82 2.92 8.85 8.59 ns

4 mA Std. 1.55 2.68 0.26 1.27 1.10 2.72 2.39 3.07 3.37 8.50 8.18 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-73

Table 2-125 • 1.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 1.55 6.35 0.26 1.22 1.10 6.46 5.93 2.40 2.46 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-126 • 1.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

2 mA Std. 1.55 2.92 0.26 1.22 1.10 2.96 2.60 2.40 2.56 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-74 Revision 23

1.2 V LVCMOS (JESD8-12A)

Low-Voltage CMOS for 1.2 V complies with the LVCMOS standard JESD8-12A for general purpose 1.2 V

applications. It uses a 1.2 V input buffer and a push-pull output buffer. Furthermore, all LVCMOS 1.2 V

software macros comply with LVCMOS 1.2 V wide range as specified in the JESD8-12A

specification.

Table 2-127 • Minimum and Maximum DC Input and Output Levels

Applicable to Advanced I/O Banks

1.2 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.26 0.25 * VCCI 0.75 * VCCI 2 2 20 26 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Table 2-128 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard Plus I/O Banks

1.2 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.26 0.25 * VCCI 0.75 * VCCI 2 2 20 26 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

Table 2-129 • Minimum and Maximum DC Input and Output Levels

Applicable to Standard I/O Banks

1.2 V

LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2

Drive

Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA3

Max.

mA3µA4µA4

1 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 1 1 20 26 10 10

Notes:

1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

3. Currents are measured at 100°C junction temperature and maximum voltage.

4. Currents are measured at 85°C junction temperature.

5. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-75

Timing Characteristics

1.2 V DC Core Voltage

Figure 2-11 • AC Loading

Table 2-130 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

01.20.65

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

Test Point

Enable Path

Datapath 5 pF

R = 1 k R to VCCI for tLZ / tZL / tZLS

R to GND for tHZ / tZH / tZHS

5 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

Table 2-131 • 1.2 V LVCMOS Low Slew

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 8.37 0.26 1.60 1.10 8.04 7.17 3.94 3.52 13.82 12.95 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-132 • 1.2 V LVCMOS High Slew

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V

Applicable to Advanced I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 3.60 0.26 1.60 1.10 3.47 3.36 3.93 3.65 9.26 9.14 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-133 • 1.2 V LVCMOS High Slew

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V

Applicable to Standard Plus I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 7.59 0.26 1.59 1.10 7.29 6.54 3.30 3.35 13.08 12.33 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-134 • 1.2 V LVCMOS High Slew

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V

Applicable to Standard Plus I/O Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

2 mA Std. 1.55 3.22 0.26 1.59 1.10 3.11 2.78 3.29 3.48 8.90 8.57 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-76 Revision 23

1.2 V LVCMOS Wide Range

Table 2-135 • 1.2 V LVCMOS High Slew

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

1 mA Std. 1.55 8.57 0.26 1.53 1.10 8.23 7.38 2.51 2.39 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-136 • 1.2 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V

Applicable to Standard Banks

Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ Units

1 mA Std. 1.55 3.59 0.26 1.53 1.10 3.47 3.06 2.51 2.49 ns

Notes:

1. Software default selection highlighted in gray.

2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-137 • Minimum and Maximum DC Input and Output Levels for LVCMOS 1.2 V Wide Range

Applicable to Advanced I/O Banks

1.2 V LVCMOS

Wide Range VIL VIH VOL VOH IOL IOH IOSL IOSH IIL2IIH3

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA4

Max.

mA4µA5µA5

100 µA 2 mA –0.3 0.35 * VCCI 0.65 * VCCI 1.26 0.25 * VCCI 0.75 * VCCI 100 100 20 26 10 10

Notes:

1. The minimum drive strength for the default LVCMOS 1.2 V software configuration when run in wide range is ± 100 µA.

The drive strength displayed in software is supported in normal range only. For a detailed I/V curve, refer to the IBIS

models.

2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges.

4. Currents are measured at 100°C junction temperature and maximum voltage.

5. Currents are measured at 85°C junction temperature.

6. Software default selection highlighted in gray.

IGLOO Low Power Flash FPGAs

Revision 23 2-77

Timing Characteristics

Refer to LVCMOS 1.2 V (normal range) "Timing Characteristics" on page 2-75 for worst-case timing.

Table 2-138 • Minimum and Maximum DC Input and Output Levels for LVCMOS 1.2 V Wide Range

Applicable to Standard Plus I/O Banks

1.2 V LVCMOS

Wide Range VIL VIH VOL VOH IOL IOH IOSL IOSH IIL2IIH3

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA4

Max.

mA4µA5µA5

100 µA 2mA –0.3 0.35 * VCCI 0.65 * VCCI 1.26 0.25 * VCCI 0.75 * VCCI 100 100 20 26 10 10

Notes:

1. The minimum drive strength for the default LVCMOS 1.2 V software configuration when run in wide range is ± 100 µA.

The drive strength displayed in software is supported in normal range only. For a detailed I/V curve, refer to the IBIS

models.

2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

4. Currents are measured at 100°C junction temperature and maximum voltage.

5. Currents are measured at 85°C junction temperature.

6. Software default selection highlighted in gray.

Table 2-139 • Minimum and Maximum DC Input and Output Levels for LVCMOS 1.2 V Wide Range

Applicable to Standard I/O Banks

1.2 V LVCMOS

Wide Range VIL VIH VOL VOH IOL IOH IOSL IOSH IIL2IIH3

Drive

Strength

Equivalent

Software

Default

Drive

Strength

Option1

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA4

Max.

mA4µA5µA5

100 µA 1 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 100 100 20 26 10 10

Notes:

1. The minimum drive strength for the default LVCMOS 1.2 V software configuration when run in wide range is ± 100 µA.

The drive strength displayed in software is supported in normal range only. For a detailed I/V curve, refer to the IBIS

models.

2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.

3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is

larger when operating outside recommended ranges

4. Currents are measured at 100°C junction temperature and maximum voltage.

5. Currents are measured at 85°C junction temperature.

6. Software default selection highlighted in gray.

Table 2-140 • 1.2 V LVCMOS Wide Range AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

01.20.65

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

IGLOO DC and Switching Characteristics

2-78 Revision 23

3.3 V PCI, 3.3 V PCI-X

Peripheral Component Interface for 3.3 V standard specifies support for 33 MHz and 66 MHz PCI Bus

applications.

AC loadings are defined per the PCI/PCI-X specifications for the datapath; Microsemi loadings for enable

path characterization are described in Figure 2-12.

AC loadings are defined per PCI/PCI-X specifications for the datapath; Microsemi loading for tristate is

described in Table 2-142.

Timing Characteristics

1.5 V DC Core Voltage

Table 2-141 • Minimum and Maximum DC Input and Output Levels

Applicable to Advanced and Standard Plus I/Os

3.3 V PCI/PCI-X VIL VIH VOL VOH IOL IOH IOSH IOSL IIL IIH

Drive Strength

Min.

Max.

Min.

Max.

Min.

VmAmA

Max.

mA1

Max.

mA1µA2µA2

Per PCI

specification

Per PCI curves 10 10

Notes:

1. Currents are measured at 100°C junction temperature and maximum voltage.

2. Currents are measured at 85°C junction temperature.

Figure 2-12 • AC Loading

Test Point

Enable Path

R to VCCI for tLZ / tZL / tZLS

10 pF for tZH / tZHS / tZL / tZLS

5 pF for tHZ / tLZ

R to GND for tHZ / tZH / tZHS

R = 1 k

Test Point

Datapath

R = 25 R to VCCI for tDP (F)

R to GND for tDP (R)

Table 2-142 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF)

0 3.3 0.285 * VCCI for tDP(R)

0.615 * VCCI for tDP(F)

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

Table 2-143 • 3.3 V PCI/PCI-X

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Advanced I/O Banks

Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.97 2.32 0.19 0.70 0.66 2.37 1.78 2.67 3.05 5.96 5.38 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-144 • 3.3 V PCI/PCI-X

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Plus I/O Banks

Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 0.97 1.97 0.19 0.70 0.66 2.01 1.50 2.36 2.79 5.61 5.10 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-79

1.2 V DC Core Voltage

Differential I/O Characteristics

Physical Implementation

Configuration of the I/O modules as a differential pair is handled by Microsemi Designer software when

the user instantiates a differential I/O macro in the design.

Differential I/Os can also be used in conjunction with the embedded Input Register (InReg), Output

support for bidirectional I/Os or tristates with the LVPECL standards.

LVDS

Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard. It

requires that one data bit be carried through two signal lines, so two pins are needed. It also requires

external resistor termination.

The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-13. The

building blocks of the LVDS transmitter-receiver are one transmitter macro, one receiver macro, three

board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver

resistors are different from those used in the LVPECL implementation because the output standard

specifications are different.

Along with LVDS I/O, IGLOO also supports Bus LVDS structure and Multipoint LVDS (M-LVDS)

configuration (up to 40 nodes).

Table 2-145 • 3.3 V PCI/PCI-X

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Advanced I/O Banks

Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 1.55 2.91 0.25 0.86 1.10 2.95 2.29 3.25 3.93 8.74 8.08 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Table 2-146 • 3.3 V PCI/PCI-X

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Plus I/O Banks

Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units

Std. 1.55 2.53 0.25 0.85 1.10 2.57 1.98 2.93 3.64 8.35 7.76 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

Figure 2-13 • LVDS Circuit Diagram and Board-Level Implementation

140 100 

= 50 

165 

–

INBUF_LVDS

OUTBUF_LVDS

FPGA FPGA

Bourns Part Number: CAT16-LV4F12

IGLOO DC and Switching Characteristics

2-80 Revision 23

Timing Characteristics

1.5 V DC Core Voltage

1.2 V DC Core Voltage

Table 2-147 • Minimum and Maximum DC Input and Output Levels

DC Parameter Description Min. Typ. Max. Units

VCCI Supply Voltage 2.375 2.5 2.625 V

VOL Output Low Voltage 0.9 1.075 1.25 V

VOH Output High Voltage 1.25 1.425 1.6 V

IOL1Output Lower Current 0.65 0.91 1.16 mA

IOH1Output High Current 0.65 0.91 1.16 mA

VI Input Voltage 0 2.925 V

IIH2Input High Leakage Current 10 µA

IIL2Input Low Leakage Current 10 µA

VODIFF Differential Output Voltage 250 350 450 mV

VOCM Output Common-Mode Voltage 1.125 1.25 1.375 V

VICM Input Common-Mode Voltage 0.05 1.25 2.35 V

VIDIFF4Input Differential Voltage 100 350 mV

Notes:

1. IOL/IOH is defined by VODIFF/(resistor network)

2. Currents are measured at 85°C junction temperature.

Table 2-148 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V)

1.075 1.325 Cross point

Note: *Measuring point = Vtrip. See Table 2-29 on page 2-28 for a complete table of trip points.

Table 2-149 • LVDS – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Banks

Speed Grade tDOUT tDP tDIN tPY Units

Std. 0.97 1.67 0.19 1.31 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 and Tab le 2-7 on

page 2-7 for derating values.

Table 2-150 • LVDS – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V

Applicable to Standard Banks

Speed Grade tDOUT tDP tDIN tPY Units

Std. 1.55 2.19 0.25 1.52 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 and Tab le 2-7 on

page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-81

B-LVDS/M-LVDS

Bus LVDS (B-LVDS) and Multipoint LVDS (M-LVDS) specifications extend the existing LVDS standard to

high-performance multipoint bus applications. Multidrop and multipoint bus configurations may contain

any combination of drivers, receivers, and transceivers. Microsemi LVDS drivers provide the higher drive

current required by B-LVDS and M-LVDS to accommodate the loading. The drivers require series

terminations for better signal quality and to control voltage swing. Termination is also required at both

ends of the bus since the driver can be located anywhere on the bus. These configurations can be

implemented using the TRIBUF_LVDS and BIBUF_LVDS macros along with appropriate terminations.

Multipoint designs using Microsemi LVDS macros can achieve up to 200 MHz with a maximum of 20

loads. A sample application is given in Figure 2-14. The input and output buffer delays are available in

the LVDS section in Table 2-149 on page 2-80 and Table 2-150 on page 2-80.

Example: For a bus consisting of 20 equidistant loads, the following terminations provide the required

differential voltage, in worst-case Industrial operating conditions, at the farthest receiver: RS=60 and

RT=70, given Z0=50 (2") and Zstub =50 (~1.5").

LVPECL

Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires

that one data bit be carried through two signal lines. Like LVDS, two pins are needed. It also requires

external resistor termination.

The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-15. The

building blocks of the LVPECL transmitter-receiver are one transmitter macro, one receiver macro, three

board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver

resistors are different from those used in the LVDS implementation because the output standard

specifications are different.

Figure 2-14 • B-LVDS/M-LVDS Multipoint Application Using LVDS I/O Buffers

...

RTRT

BIBUF_LVDS

EN EN EN EN EN

Receiver Transceiver Receiver TransceiverDriver

RSRSRSRSRSRSRSRS

RSRS

Zstub Zstub Zstub Zstub Zstub Zstub Zstub Zstub

Figure 2-15 • LVPECL Circuit Diagram and Board-Level Implementation

187 W 100 

Z0 = 50 

100 

–

INBUF_LVPECL

OUTBUF_LVPECL

FPGA FPGA

Bourns Part Number: CAT16-PC4F12

IGLOO DC and Switching Characteristics

2-82 Revision 23

Timing Characteristics

1.5 V DC Core Voltage

1.2 V DC Core Voltage

Table 2-151 • Minimum and Maximum DC Input and Output Levels

DC Parameter Description Min. Max. Min. Max. Min. Max. Units

VCCI Supply Voltage 3.0 3.3 3.6 V

VOL Output Low Voltage 0.96 1.27 1.06 1.43 1.30 1.57 V

VOH Output High Voltage 1.8 2.11 1.92 2.28 2.13 2.41 V

VIL, VIH Input Low, Input High Voltages 0 3.6 0 3.6 0 3.6 V

VODIFF Differential Output Voltage 0.625 0.97 0.625 0.97 0.625 0.97 V

VOCM Output Common-Mode Voltage 1.762 1.98 1.762 1.98 1.762 1.98 V

VICM Input Common-Mode Voltage 1.01 2.57 1.01 2.57 1.01 2.57 V

VIDIFF Input Differential Voltage 300 300 300 mV

Table 2-152 • AC Waveforms, Measuring Points, and Capacitive Loads

Input Low (V) Input High (V) Measuring Point* (V)

1.64 1.94 Cross point

Note: *Measuring point = Vtrip. See Table 2-28 on page 2-102 for a complete table of trip points.

Table 2-153 • LVPECL – Applies to 1.5 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Banks

Speed Grade tDOUT tDP tDIN tPY Units

Std. 0.97 1.67 0.19 1.16 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

Table 2-154 • LVPECL – Applies to 1.2 V DC Core Voltage

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V

Applicable to Standard Banks

Speed Grade tDOUT tDP tDIN tPY Units

Std. 1.55 2.24 0.25 1.37 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.

IGLOO Low Power Flash FPGAs

Revision 23 2-83

I/O Register Specifications

Fully Registered I/O Buffers with Synchronous Enable and

Asynchronous Preset

Figure 2-16 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchronous Preset

INBUF

INBUF INBUF

TRIBUF

CLKBUF

INBUF

CLKBUF

Data Input I/O Register with:

Active High Enable

Active High Preset

Positive-Edge Triggered

Data Output Register and

Enable Output Register with:

Active High Enable

Active High Preset

Postive-Edge Triggered

Pad Out

CLK

Enable

Preset

Data_out

Data

EOUT

DOUT

Enable

CLK

DFN1E1P1

PRE

DFN1E1P1

PRE

DFN1E1P1

PRE

D_Enable

Core

Array

IGLOO DC and Switching Characteristics

2-84 Revision 23

Table 2-155 • Parameter Definition and Measuring Nodes

Parameter Name Parameter Definition

Measuring Nodes

(from, to)*

tOCLKQ Clock-to-Q of the Output Data Register H, DOUT

tOSUD Data Setup Time for the Output Data Register F, H

tOHD Data Hold Time for the Output Data Register F, H

tOSUE Enable Setup Time for the Output Data Register G, H

tOHE Enable Hold Time for the Output Data Register G, H

tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register L, DOUT

tOREMPRE Asynchronous Preset Removal Time for the Output Data Register L, H

tORECPRE Asynchronous Preset Recovery Time for the Output Data Register L, H

tOECLKQ Clock-to-Q of the Output Enable Register H, EOUT

tOESUD Data Setup Time for the Output Enable Register J, H

tOEHD Data Hold Time for the Output Enable Register J, H

tOESUE Enable Setup Time for the Output Enable Register K, H

tOEHE Enable Hold Time for the Output Enable Register K, H

tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register I, EOUT

tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register I, H

tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register I, H

tICLKQ Clock-to-Q of the Input Data Register A, E

tISUD Data Setup Time for the Input Data Register C, A

tIHD Data Hold Time for the Input Data Register C, A

tISUE Enable Setup Time for the Input Data Register B, A

tIHE Enable Hold Time for the Input Data Register B, A

tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register D, E

tIREMPRE Asynchronous Preset Removal Time for the Input Data Register D, A

tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register D, A

Note: *See Figure 2-16 on page 2-83 for more information.

IGLOO Low Power Flash FPGAs

Revision 23 2-85

Fully Registered I/O Buffers with Synchronous Enable and

Asynchronous Clear

Figure 2-17 • Timing Model of the Registered I/O Buffers with Synchronous Enable and Asynchronous Clear

Enable

CLK

Pad Out

CLK

Enable

CLR

Data_out

Data

EOUT

DOUT

Core

Array

DFN1E1C1

CLR

DFN1E1C1

CLR

DFN1E1C1

CLR

D_Enable

CLKBUF

INBUF

TRIBUF

INBUF INBUF CLKBUF

INBUF

Data Input I/O Register with

Active High Enable

Active High Clear

Positive-Edge Triggered Data Output Register and

Enable Output Register with

Active High Enable

Active High Clear

Positive-Edge Triggered

IGLOO DC and Switching Characteristics

2-86 Revision 23

Table 2-156 • Parameter Definition and Measuring Nodes

Parameter Name Parameter Definition

Measuring Nodes

(from, to)*

tOCLKQ Clock-to-Q of the Output Data Register HH, DOUT

tOSUD Data Setup Time for the Output Data Register FF, HH

tOHD Data Hold Time for the Output Data Register FF, HH

tOSUE Enable Setup Time for the Output Data Register GG, HH

tOHE Enable Hold Time for the Output Data Register GG, HH

tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register LL, DOUT

tOREMCLR Asynchronous Clear Removal Time for the Output Data Register LL, HH

tORECCLR Asynchronous Clear Recovery Time for the Output Data Register LL, HH

tOECLKQ Clock-to-Q of the Output Enable Register HH, EOUT

tOESUD Data Setup Time for the Output Enable Register JJ, HH

tOEHD Data Hold Time for the Output Enable Register JJ, HH

tOESUE Enable Setup Time for the Output Enable Register KK, HH

tOEHE Enable Hold Time for the Output Enable Register KK, HH

tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register II, EOUT

tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register II, HH

tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register II, HH

tICLKQ Clock-to-Q of the Input Data Register AA, EE

tISUD Data Setup Time for the Input Data Register CC, AA

tIHD Data Hold Time for the Input Data Register CC, AA

tISUE Enable Setup Time for the Input Data Register BB, AA

tIHE Enable Hold Time for the Input Data Register BB, AA

tICLR2Q Asynchronous Clear-to-Q of the Input Data Register DD, EE

tIREMCLR Asynchronous Clear Removal Time for the Input Data Register DD, AA

tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register DD, AA

Note: *See Figure 2-17 on page 2-85 for more information.

IGLOO Low Power Flash FPGAs

Revision 23 2-87

Input Register

Timing Characteristics

1.5 V DC Core Voltage

Figure 2-18 • Input Register Timing Diagram

50%

Preset

Clear

Out_1

CLK

Data

Enable

ISUE

50%

ISUD

IHD

50% 50%

ICLKQ

IHE

IRECPRE

IREMPRE

IRECCLR

IREMCLR

IWCLR

IWPRE

IPRE2Q

ICLR2Q

ICKMPWH

ICKMPWL

50% 50%

50% 50% 50%

50% 50%

50% 50% 50% 50% 50% 50%

50%

Table 2-157 • Input Data Register Propagation Delays

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V

Parameter Description Std. Units

tICLKQ Clock-to-Q of the Input Data Register 0.42 ns

tISUD Data Setup Time for the Input Data Register 0.47 ns

tIHD Data Hold Time for the Input Data Register 0.00 ns

tISUE Enable Setup Time for the Input Data Register 0.67 ns

tIHE Enable Hold Time for the Input Data Register 0.00 ns

tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 0.79 ns

tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 0.79 ns

tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 ns

tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.24 ns

tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 ns

tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.24 ns

tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.19 ns

tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.19 ns

tICKMPWH Clock Minimum Pulse Width High for the Input Data Register 0.31 ns

tICKMPWL Clock Minimum Pulse Width Low for the Input Data Register 0.28 ns

Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-7 for derating values.

IGLOO DC and Switching Characteristics

2-88 Revision 23

1.2 V DC Core Voltage

Output Register

Table 2-158 • Input Data Register Propagation Delays

Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V

Parameter Description Std. Units

tICLKQ Clock-to-Q of the Input Data Register 0.68 ns

tISUD Data Setup Time for the Input Data Register 0.97 ns

tIHD Data Hold Time for the Input Data Register 0.00 ns

tISUE Enable Setup Time for the Input Data Register 1.02 ns

tIHE Enable Hold Time for the Input Data Register 0.00 ns

tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 1.19 ns

tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 1.19 ns