DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor Product specification Supersedes data of 1998 Jul 16 1999 Apr 08 Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING * High current (max. 1 A) PIN * Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base * General purpose switching and amplification * Power applications such as audio output stages. handbook, halfpage 2 DESCRIPTION 3 NPN medium power transistor in a SOT89 plastic package. PNP complement: BC869. 1 MARKING 1 TYPE NUMBER CAC BC868-25 CDC 3 Bottom view MARKING CODE BC868 2 MAM296 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 32 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 1 A ICM peak collector current - 2 A IBM peak base current Ptot total power dissipation Tstg - 200 mA - 1.35 W storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". 1999 Apr 08 2 Philips Semiconductors Product specification NPN medium power transistor BC868 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE UNIT 93 K/W 13 K/W note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 25 V - - 100 nA IE = 0; VCB = 25 V; Tj = 150 C - - 10 A - - 100 nA IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 5 mA; VCE = 10 V 50 - - IC = 500 mA; VCE = 1 V; see Fig.2 85 - 375 IC = 1 A; VCE = 1 V; see Fig.2 60 - - IC = 500 mA; VCE = 1 V; see Fig.2 DC current gain 160 - 375 VCEsat collector-emitter saturation voltage IC = 1 A; IB = 100 mA - - 500 mV VBE base-emitter voltage IC = 5 mA; VCE = 10 V - 620 - mV IC = 1 A; VCE = 1 V - - 1 V fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 40 - - MHz h FE1 ----------h FE2 DC current gain ratio of the complementary pairs IC = 0.5 A; VCE = 1 V - - 1.6 BC868-25 1999 Apr 08 3 Philips Semiconductors Product specification NPN medium power transistor BC868 MGD844 300 handbook, full pagewidth hFE 250 200 150 100 50 0 10-1 1 102 10 VCE = 1 V. Fig.2 DC current gain; typical values. 1999 Apr 08 4 103 IC (mA) 104 Philips Semiconductors Product specification NPN medium power transistor BC868 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 1999 Apr 08 EUROPEAN PROJECTION ISSUE DATE 97-02-28 5 Philips Semiconductors Product specification NPN medium power transistor BC868 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 08 6 Philips Semiconductors Product specification NPN medium power transistor BC868 NOTES 1999 Apr 08 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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