2SB1495
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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1495
High-Power Switching Applications
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −2 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A)
• Complementary to 2SD2257
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −100 V
Collector-emitter voltage VCEO −100 V
Emitter-base voltage VEBO −8 V
DC IC −3
Collector current
Pulsed ICP −5
A
Base current IB −0.3 A
Ta = 25°C 2.0
Collector power
dissipation Tc = 25°C
PC 20
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
≈ 4 kΩ ≈ 800 Ω
Collector
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Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −100 V, IE = 0 ― ― −10 μA
Emitter cut-off current IEBO V
EB = −8 V, IC = 0 −0.8 ― −4.0 mA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −100 ― ― V
hFE (1) V
CE = −2 V, IC = −1 A 2000 ― ―
DC current gain
hFE (2) V
CE = −2 V, IC = −2 A 2000 ― ―
Collector-emitter saturation voltage VCE (sat) IC = −1.5 A, IB = −1.5 mA ― ― −1.5 V
Base-emitter saturation voltage VBE (sat) I
C = −1.5 A, IB = −1.5 mA ― ― −2.0 V
Turn-on time ton ― 0.5 ―
Storage time tstg ― 1.0 ―
Switching time
Fall time tf
−IB1 = IB2 = 1.5 mA, duty cycle ≤ 1%
― 0.4 ―
μs
Marking
IB1
20 μsInput
IB2
VCC ≈ −30 V
IB2
IB1
Output
20 Ω
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
B1495
Part No. (or abbreviation code)
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Base-emitter saturation voltage
VBE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
VBE (sat) – IC
Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
−10 −30
−0.05
−0.3
−5
−0.03
−0.1
−0.3
−0.5
−1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
1 ms*
10 ms*
100 μs*
−100 −3
−3
−300−1
VCEO max
−0.5
−0.3
−5
Tc = −55°C
100
−3
−1 −3 −0.5 −5
−1
Common emitter
IC/IB = 1000
25
0
0
−1
−2
−1 −2 −3 −4
IB = −200 μA
−1000
−500
−800
−400
−250
−300
Common emitter
Tc = 25°C
−5
−3
−4
0
0
−0.5
−2.5
−0.4 −1.2 −2.0 −2.8
Common emitter
VCE = −2 V
Tc = 100°C 25 −55
−0.8 −1.6 −2.4
−1.0
−1.5
−2.0
−3.0
10000
−0.03
Common emitter
VCE = −2 V
100
300
500
1000
3000
5000
−0.1 −0.3 −1 −3
Tc = 100°C 25
−55
−10 −5
−0.5
−0.3
−5
Tc = −55°C
−3
−1 −3 −0.5 −5
−1
Common emitter
IC/IB = 1000
100
25
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
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• Please contact your sales representative for product-by-product details in this document regarding RoHS
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that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
