TIP31C - Motorola / Freescale Semiconductor

3–1

Motorola Bipolar Power Transistor Device Data

  

 

. . . designed for use in general purpose amplifier and switching applications.

•Collector–Emitter Saturation Voltage —

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc (Min) — TIP31A, TIP32A

VCEO(sus) = 80 Vdc (Min) — TIP31B, TIP32B

VCEO(sus) = 100 Vdc (Min) — TIP31C, TIP32C

•High Current Gain — Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

•Compact TO–220 AB Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

TIP31A

TIP32A

ÎÎÎÎ

TIP318

TIP32B

ÎÎÎ

TIP31C

TIP32C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

3.0

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.32

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive

Load Energy (1)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

3.125

ÎÎÎ

C/W

(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP31A/D

 Motorola, Inc. 1995













3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–80–100 VOLTS

40 WATTS

*Motorola Preferred Device





 



CASE 221A–06

TO–220AB

REV 1

     

3–2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31A, TIP32A

Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C

TIP32B, TIP32C

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A

(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B

(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

Figure 1. Power Derating

T, TEMPERATURE (

0 100

1.0

160

2.0

3.0

60 80

40 140

4.0

TURN–ON PULSE

APPROX

+11 V

Vin 0

VEB(off) t1

APPROX

+11 V

Vin

TURN–OFF PULSE

≤

7.0 ns

100 < t2 < 500

t3 < 15 ns

DUTY CYCLE

≈

2.0%

APPROX –9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

SCOPE

VCC

Vin

Cjd << Ceb

–4.0 V

Figure 2. Switching Time Equivalent Circuit

0.03

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.02 0.1 3.0

0.07

1.0

IC/IB = 10

TJ = 25

tr @ VCC = 10 V

t, TIME ( s)

0.5

0.3

0.1

0.05

0.05 0.3 0.5

td @ VEB(off) = 2.0 V

0.03

0.7

2.0

0.07 0.7

tr @ VCC = 30 V

20 120

PD, POWER DISSIPATION (WATTS)

     

3–3

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 1.0 100

JC(t) = r(t) R

JC(t) = 3.125

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

SINGLE PULSE

1.0 k

D = 0.5

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

0.2

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10 205.0 50 100

Figure 5. Active Region Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWN

LIMITED @ TJ

≤

150

THERMAL LIMIT @ TC = 25

(SINGLE PULSE)

BONDING WIRE LIMIT

1.0 ms

100

2.0

1.0

5.0

IC, COLLECTOR CURRENT (AMP)

5.0 ms

CURVES APPLY

BELOW RATED VCEO

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.05 0.1 0.2 0.70.03 0.3 0.50.07 IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn–Off Time

3.0

t, TIME ( s)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03 1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3 VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

300

CAPACITANCE (pF)

200

100

30 10 20 4030

tf @ VCC = 30 V

tf @ VCC = 10 V

′

IB1 = IB2

IC/IB = 10

′

= ts – 1/8 tf

TJ = 25

TJ = +25

Ceb

Ccb

     

3–4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (

103

–0.4

101

100

10–2

102

10–1

10–3

107

105

104

102

106

103

IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.05 0.07 0.3 3.00.03

100

7.0

0.1

VBE, BASE–EMITTER VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE = 2.0 V

5.0 0.7 1.00.5

1.6

2.0

2.0 5.0 20 10001.0

0.8

0.4

0100 200 50050

TJ = 150

–55

C1.2

1.4

0.003 IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

0.4

1.2

0.6

0.2

00.005 0.01 0.02 0.03 0.05 0.1

+2.5

IC = 0.3 A

20 60 80 100 120 16014040

V, VOLTAGE (VOLTS)

TJ = 25

1.0 A 3.0 A

0.2 0.3 0.5 1.0 2.0 3.0

TJ = 25

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0

+1.5

+1.0

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

0.0030.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0

*APPLIES FOR IC/IB

≤

hFE/2

TJ = –65

C TO +150

VC FOR VCE(sat)

VB FOR VBE

Figure 11. Temperature Coefficients

, COLLECTOR CURRENT ( A)

–0.3 –0.2 –0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

ICES

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

≈

ICES

IC = 2 x ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

     

3–5

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

     

3–6 Motorola Bipolar Power Transistor Device Data

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TIP31A/D

*TIP31A/D*

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