2N6547
HIGH POW ER NPN SILICON TRANSISTOR
■STMicr o electronics PREF E RRED
SALESTYPE
■NPN TRANSISTOR
■HIGH VOLTAGE CAPABILITY
■HIGH CURRENT CAPABILITY
■FAST SWITCHING SPEED
APPLICATIONS
■SWITC H MODE POW ER SUPPLIES
■FLYB ACK A ND F ORW ARD SING LE
TR A NSI STO R LOW PO W ER CO NV ERT E RS
DESCRIPTION
The 2N6547 is a silicon Multiepitaxial Mesa NPN
transistor mounted in TO-3 metal case. It is
particulary intended for switching and industrial
applications from single and tree-phase mains. INT E R NAL SCH E M ATI C DIAG RA M
October 2001
12
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCER Collector-Emitter Voltage (RBE = 50 Ω)850 V
VCES Collector-Emitter Voltage (VBE = 0) 850 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 15 A
ICM Collector Peak Current 30 A
IBBase C urrent 4 A
IBM Base Peak Current 20 A
Ptot Total Dissipation at Tc = 25 oC 175 W
Tstg Storage Temperature -65 to200 oC
TjMax. Operating Junction Temperature 200 oC
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-ca se Max 1 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off Current
(VBE = 0) VCE = 850 V
VCE = 850 V Tc = 100 oC1
4mA
mA
ICER Collector Cut-off Current
(RBE = 10 Ω)VCE = 850 V Tc = 10 0 oC5mA
I
EBO Emitter Cut-off Current
(IC = 0) VEB = 9 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA L = 25 mH 400 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 10 A IB = 2 A
IC = 15 A IB = 3 A
IC = 10A IB = 2 A Tc =100 oC
1.5
5
2.5
V
V
V
VBE(sat)∗Base-Emitter Saturation
Voltage IC = 10 A IB = 2 A
IC = 10A IB = 2 A Tc =100 oC 1.6
1.6 V
V
hFE∗DC Current Ga in IC = 5 A VCE = 2 V
IC = 10 A VCE = 2 V 12
630
fT∗Transition Frequency IC = 0.5 A VCE = 10 V
f = 1 MHz 6 24 MHz
CCBO Collector-Base
Capacitance (IE = 0) VCB = 10 V f = 1 MHz 360 pF
∗ P ulsed: P ulse durati on = 300 µs, d uty cy cle ≤ 2 %
RESISTIVE LOAD SWITCHING TIMES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ton
ts
tf
Turn-on Time
Storage Time
Fall Time
VCC = 250 V IC = 10 A
IB1 = - IB2 = 2 A Tp ≥ 25 µs 1
4
0.7
µs
µs
µs
INDUCTI V E LOAD SW IT CHING TIM ES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ts
tfStorage Time
Fall Time VCL = 450 V IC = 10 A
LC = 180 µH IB1 = 2 A
VBE = -5 V Tc = 100 oC
5
1.5 µs
µs
2N6547
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may resul t fro m its u se. N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject t o change without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroel ectronics.
Th e ST l og o is a tr ade mark of STMicroelec tronics
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