TIP150 - Power Innovations

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

●80 W at 25°C Case Temperature

●7 A Continuous Collector Current

●10 A Peak Collector Current

●Maximum VCE(sat) of 2 V at IC = 5 A

●ICEX(sus) 7 A at rated V(BR)CEO

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base. MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for tp ≤ 5 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

RATINGSYMBOLVALUEUNIT

Collector-base voltage (IE = 0)TIP150

TIP151

TIP152VCBO

300

350

400V

Collector-emitter voltage (IB = 0)TIP150

TIP151

TIP152VCEO

300

350

400V

Emitter-base voltageVEBO8V

Continuous collector current IC7A

Peak collector current (see Note 1)ICM10A

Continuous base current IB1.5A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot80W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot2W

Operating junction temperature rangeTj-65 to +150°C

Storage temperature rangeTstg-65 to +150°C

Lead temperature 3.2 mm from case for 10 secondsTL260°C

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

PRODUCT INFORMATION

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

V(BR)CBOCollector-base

breakdown voltageIC = 1 mAIE = 0TIP150

TIP151

TIP152

300

350

400V

V(BR)CEOCollector-emitter

breakdown voltageIC = 10 mA

(see Note 4)IB = 0TIP150

TIP151

TIP152

300

350

400V

ICEOCollector-emitter

cut-off current

VCE=300 V

VCE= 350 V

VCE= 400 V

IB=0

TIP150

TIP151

TIP152

250

250µA

ICEX(sus)Collector-emitter

sustaining currentVCLAMP= V(BR)CEO7A

IEBOEmitter cut-off

currentVEB = 8 VIC=0 15 mA

hFEForward current

transfer ratio

VCE = 5 V

IC= 2.5A

IC= 5A

IC= 7A(see Notes 4 and 5)150

VCE(sat)Collector-emitter

saturation voltage

IB = 10 mA

IB = 100 mA

IB = 250 mA

IC= 1A

IC= 2A

IC= 5A(see Notes 4 and 5)1.5

1.5

VBE(sat)Base-emitter

saturation voltageIB = 100 mA

IB = 250 mAIC= 2A

IC= 5A(see Notes 4 and 5)2.2

2.3V

VECParallel diode

forward voltageIE = 7 AIB=0(see Notes 4 and 5)3.5V

hfeSmall signal forward

current transfer ratioVCE = 5 VIC=0.5Af = 1 kHz200

|hfe|Small signal forward

current transfer ratioVCE = 5 VIC=0.5Af = 1 MHz10

CobOutput capacitanceVCB = 10 VIE=0f = 1 MHz100pF

thermal characteristics

PARAMETERMINTYPMAXUNIT

RθJCJunction to case thermal resistance1.56°C/W

RθJAJunction to free air thermal resistance62.5°C/W

CθCThermal capacitance of case0.9J/°C

inductive-load-switching characteristics at 25°C case temperature

PARAMETERTEST CONDITIONS †MINTYPMAXUNIT

tsv Voltage storage time

IC = 5 A

V(clamp) = V(BR)CEOIB(on) = 250 mARBE = 47 Ω

3.9µs

tsiCurrent storage time4.7µs

trvVoltage transition time1.2µs

ttiCurrent transition time1.2µs

txoCross-over time2.0µs

JUNE 1973 - REVISED MARCH 1997

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATION

Figure 1. Functional Test Circuit

Figure 2. Functional Test Waveforms

Figure 3. Switching Test Circuit

Driver and

Current

Limiting

Circuit 0.22

µµ

24 V

L = 7 mH

100

ΩΩ

0.2

ΩΩ

TUT

Vclamp

Collector

Emitter

Voltage

16.6 ms

11.6 ms

Input

Signal

Base

Current

Collector

Current

24 V

40 V 12 V

0.056

ΩΩ

IRF140

1 k

ΩΩ

TUT

BY205-600

7 mH

Vclamp

Adjust for

= 10 VVin

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 4. Figure 5.

Figure 6. Figure 7.

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

IC - Collector Current - A

0·4 1·0 10

hFE - Typical DC Current Gain

100

1000

10000 TCD150AA

VCE = 5 V

tp = 300 µs, duty cycle <2%

TC = 125°C

TC = 25°C

TC = -30°C

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

IC - Collector Current - A

0·4 1·0 10

VCE(sat) - Collector-Emitter Saturation Voltage - V

0·1

1·0

10 TCD150AB

IC / IB = 20

tp = 300 µs, duty cycle < 2%

TC = 125°C

TC = 25°C

TC = -30°C

BASE-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

IC - Collector Current - A

0·4 1·0 10

VBE(sat) - Base-Emitter Saturation Voltage - V

1·0

1·5

2·0

2·5

3·0 TCP150AC

TC = -30°C

TC = 25°C

TC = 125°C

IC / IB = 20

tp = 300µs, duty cycle < 2%

COLLECTOR CUT-OFF CURRENT

CASE TEMPERATURE

TC - Case Temperature - °C

-50 -25 025 50 75 100 125

ICEO - Collector Cut-off Current - µA

1·0

100

1000 TCD150AD

VCE = 400 V

IB = 0

JUNE 1973 - REVISED MARCH 1997

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

PRODUCT INFORMATION

MAXIMUM SAFE OPERATING REGIONS

Figure 8.

THERMAL INFORMATION

Figure 9.

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

VCE - Collector-Emitter Voltage - V

1·0 10 100 1000

IC - Collector Current - A

0·01

0.1

1·0

100 SAD150AA

TIP150

TIP151

TIP152

tp = 0.1 ms

tp = 1 ms

tp = 5 ms

DC Operation

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TC - Case Temperature - °C

025 50 75 100 125 150

Ptot - Maximum Power Dissipation - W

100 TID150AA

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

PRODUCT INFORMATION

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

TO220

ALL LINEAR DIMENSIONS IN MILLIMETERS

ø1,23

1,32

4,20

4,70

1 2 3

0,97

0,61

see Note C

see Note B

10,0

10,4

2,54

2,95

6,0

6,6

14,55

15,90

12,7

14,1

3,5

6,1

1,07

1,70

2,34

2,74

4,88

5,28

3,71

3,96

0,41

0,64

2,40

2,90

VERSION 2 VERSION 1

NOTES: A. The centre pin is in electrical contact with the mounting tab.

B. Mounting tab corner profile according to package version.

C. Typical fixing hole centre stand off height according to package version.

Version 1, 18.0 mm. Version 2, 17.6 mm.

MDXXBE

JUNE 1973 - REVISED MARCH 1997

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.