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Schottky Diode (FH1N5817)
肖特基二极管
Features 特征:
·Ideal for surface mounted applications
·Low leakage current.
·For use in low voltage, high frequency
inverters free wheeling, and polarity
protection applications.
DO-214AC
1.0 Amper e Schottky Barrier Rectifiers
1.0 安培肖特基势垒整流二极管
Absolute Maximum Ratings* 最大绝对值
TA=25℃ u less otherwise noted n
Symbol 符号 Parameter 参数 Value Unites
I F(AV) Average Rectified Current 平均整流电流 1.0 A
I FSM Non-repetitive Peak Forward Surge Current 无重复正
向峰值浪涌电流 8.3 ms single half-sine-wave
superimposed on rated load
30 A
PD Total Device Dissipation 总耗散功率
Derate above 25℃ 1.25
12.5 W
MW/℃
RθJA Thermal Resistance, Junction to Ambient 热阻 20 ℃/W
T STG Storage Temperature Range 储存温度 -65 to +150 ℃
T J Operating Junction Temperature 工作结温 -65 to +150 ℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
Electrical Characteristics TA=25℃ unless otherwise noted
Symbol
符号 Parameter 参数 Value Units
V RRM Maximum Peak Repetitive Reverse Voltage 最大峰值
反向电压 20 V
V RMS Maximum RMS Voltage 14 V
V R DC Reverse Voltage (Rated V R)反向电压 20 V
I RM Maximum Instantaneous Reverse Current 最大瞬间
反向电流 TA=25℃@rated V R
TA=100℃
0.5
10
mA
mA
VFM Maximum Instantaneous Forward Voltage 最大瞬间
正向电压 @1.0A 500 mV
C Typical Junction capacitance 典型结容 110 pF
*2005 年第 2版* All Rights Reserved