RS3A thru RS3M
MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, der a te curr e n t b y 20%
SMC
All Dimensions in m illim ete r
SMC
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 6.60 7.11
6.22 5.59
2.92 3.18
0.31 0.15
7.75 8.13
0.05 0.20
2.01 2.62
0.76 1.52
C
HEF
G
D
B
A
FEATURES
Fast switching for high efficiency
For surface mounted applications
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic ma terial has UL flamm ability classification
94V-0
ME CHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.007 ounces, 0.21 grams
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Av erage Forward
Re ctified C urrent
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximu m forward Voltage a t 3.0A DC
3.0
100
1.3
T
J
Operating Tem perature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (Note 3)
R
0JL
10
C/W
C
J
Typical JunctionCapacitance (Note 2)
50
pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 5
250
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
200
140
200
50
35
50
1000
700
1000
100
70
100
800
560
800
600
420
600
400
280
400
RS3A RS3M RS3K RS3J RS3G RS3D RS3B
@T
L
=75 C
Typical Thermal Resistance (Note 4)
R
0JA
50
C/W
Maximum Reverse Recovery Time (Note 1)
T
RR
150 250 500
ns
NOTES : 1. Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistan ce Junction to Lead.
4. Thermal Resistance Junction to Ambient.
SURFA CE MOUNT
FA ST RECOVERY RECTIFIERS
REVERSE VOLTAGE -
50
to
1000
Volts
FORWARD CURRENT -
3. 0
Amperes
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KSEC01