KSD-T0C040-000 2
2N5401N
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO -160 V
Collector-emitter voltage VCEO -160 V
Emitter-base voltage VEBO -5 V
Collector current IC -600 mA
Collector power dissipation PC 400 mW
Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO I
C=-1mA, IB=0 -160 - - V
Collector cut-off current ICBO V
CB=-160V, IE=0 - - -100 nA
Emitter cut-off current IEBO V
EB=-5V, IC=0 - - -100 nA
DC current gain hFE (1) V
CE=-5V, IC=-1mA 50 - -
DC current gain hFE (2) V
CE=-5V, IC=-10mA 60 - 240 -
DC current gain hFE (3) V
CE=-5V, IC=-50mA 50 - -
Collector-emitter saturation voltage VCE(sat)(1)
* IC=-10mA, IB=-1mA - - -0.2 V
Collector-emitter saturation voltage VCE(sat)(2)
* IC=-50mA, IB=-5mA - - -0.5 V
Base-emitter saturation voltage VBE(sat)(1)
* IC=-10mA, IB=-1mA - - -1 V
Base-emitter saturation voltage VBE(sat)(2)* IC=-50mA, IB=-5mA - - -1 V
Base-emitter voltage VBE V
CE=-5V, IC=-50mA - -0.7 -0.9 V
Transition frequency fT V
CE=-10V, IC=-10mA 100 - 400 MHz
Collector output capacitance Cob V
CB=-10V, IE=0, f=1MHz - - 6 pF
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%