DS30366 Rev. 5 - 2 1 of 3 BSS123
www.diodes.com ã Diodes Incorporated
BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·High Drain-Source Voltage Rating
·Available in Lead Free/RoHS Compliant Version (Note 2)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol BSS123 Units
Drain-Source Voltage VDSS 100 V
Drain-Gate Voltage RGS £ 20KWVDGR 100 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous
Pulsed
ID
IDM
170
680 mA
Total Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
·Terminal Connections: See Diagram
·Marking: K23 (See Page 3)
·Ordering & Date Code Information: See Page 3
·Weight: 0.008 grams (approximate)
Mechanical Data
TCUDORPWEN
Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
Source
Gate
D
ra
i
n
SPICE MODEL: BSS123
DS30366 Rev. 5 - 2 2 of 3 BSS123
www.diodes.com
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 100 ¾¾VVGS = 0V, ID = 250mA
Zero Gate Voltage Drain Current IDSS ¾¾
1.0
10
µA
nA
VDS = 100V, VGS = 0V
VDS = 20V, VGS = 0V
Gate-Body Leakage, Forward IGSSF ¾¾50 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 0.8 1.4 2.0 V VDS =V
GS, ID = 1mA
Static Drain-Source On-Resistance RDS (ON) ¾
¾
¾
¾
6.0
10 WVGS = 10V, ID = 0.17A
VGS = 4.5V, ID = 0.17A
Forward Transconductance gFS 80 370 ¾mS VDS = 10V, ID = 0.17A, f = 1.0KHz
Drain-Source Diode Forward Voltage VSD ¾0.84 1.3 V VGS = 0V, IS = 0.34A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾29 60 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾10 15 pF
Reverse Transfer Capacitance Crss ¾26pF
SWITCHING CHARACTERISTICS
Turn-On Rise Time tr¾¾ 8ns
VDD = 30V, ID = 0.28A,
RGEN = 50W,V
GS = 10V
Turn-Off Fall Time tf¾¾16 ns
Turn-On Delay Time tD(ON) ¾¾ 8ns
Turn-Off Delay Time tD(OFF) ¾¾13 ns
Electrical Characteristics @ TA = 25°C unless otherwise specified
Note: 3. Short duration test pulse used to minimize self-heating effect.
TCUDORPWEN
0
0.2
0
.7
01345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 On-Re
g
ion Characteristics
V = 4V
GS
2
0.6
0.5
0.1
0.3
0.4
V = 3V
GS
V = 10, 7, 6, 5V
GS
0.8
1.2
1.6
0.1 0.2
R , NORMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
V=4V
GS
2.0
2
.4
0.3 0.4 0.5 0.6
V=3V
GS
V = 5, 6, 7, 10V
GS
DS30366 Rev. 5 - 2 3 of 3 BSS123
www.diodes.com
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
K23
YM
K23 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Marking Information
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS123-7-F.
Device Packaging Shipping
BSS123-7 SOT-23 3000/Tape & Reel
Ordering Information (Note 4)
TCUDORPWEN
0.4
0.8
1.2
-50 0 75 100 125 150
R NORMALIZED ON-RESISTANCE
DS(ON),
T , JUNCTION TEMPERATURE (ºC)
J
Fi
g
. 4 On-Resistance Variation with Temperature
1.6
1.8
2
.
2
-25 25 50
0.6
1
1.4
2
V = 10V
GS
I = 170m
D
0.7
0.8
0.9
-50 0 75 100 125 150
V NORMALIZED THRESHOLD VOLTAGE
GS(th),
T , JUNCTION TEMPERATURE (ºC)
J
Fi
g
. 3 Gate Threshold Variation with Temperature
1
1.1
1.2
-25 25 50
0
5
0
0515 20 25
C, CAPACITANCE (pF)
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 5 T
y
pical Capacitance
10
40
30
10
20 Ciss
Coss
Crss
Year 2002 2003 2004 2005 2006 2007 2008 2009
Code NPRS T UVW
Date Code Key
