SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
PARTMARKING DETAILS BCX17 T1
BCX18 T2
BCX17R T4
BCX18R T5
COMPLEMENTARY TYPES - BCX17 - BCX19
BCX18 - BCX20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCX17 BCX18 UNIT
Collector-Emitter Voltage VCES -50 -30 V
Collector-Emitter Voltage (IC =-10mA) VCEO -45 -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-500 mA
Peak Collector Current ICM -1000 mA
Base Current IB-100 mA
Peak Base Current IBM -200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
ICBO -100
-200
nA
µA
IE =0, VCB =-20V
IE =0, VCB =-20V, Tj=150°C
Emitter-Base Cut-Off
Current
IEBO -10 µAIC =0, VEB =-1V
Base-Emitter Voltage VBE -1.2 V IC =-500mA, VCE
=-1V*
Collector-Emitter
Saturation Voltage
VCE(sat) -620 mV IC =-500mA, IB =-50mA*
Static Forward Current
Transfer Ratio
hFE 100
70
40
600 IC =-100mA, VCE
=-1V
IC =-300mA, VCE
=-1V*
IC =-500mA, VCE
=-1V*
Transition Frequency fT100 MHz IC =-10mA, VCE
=-5V
f =35MHz
Collector - base
Capacitance
Cobo 8.0 pF IE =Ie =0, VCB
=-10V
f =1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
BCX17
BCX18
C
B
E
SOT23
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