MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) C SOT23 B E Device Symbol Top View Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number MMBT5401-7-F MMBT5401-13-F MMBT5401Q-7-F Notes: Compliance AEC-Q101 AEC-Q101 Automotive Marking K4M K4M K4M Reel Size (inches) 7 13 7 Tape Width (mm) 8 8 8 Quantity Per Reel 3,000 10,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information K4M = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 3 = March) Date Code Key Year Code Month Code 2017 E Jan 1 2018 F Feb 2 MMBT5401 Document number: DS30057 Rev. 11 - 2 2019 G Mar 3 2020 H Apr 4 2021 I May 5 Jun 6 1 of 7 www.diodes.com 2022 J Jul 7 2023 K Aug 8 2024 L Sep 9 2025 M Oct O 2026 N Nov N Dec D May 2018 (c) Diodes Incorporated MMBT5401 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value -160 -150 -5 -600 Unit V V V mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RJA RJL TJ,TSTG Value 310 350 403 357 350 -55 to +150 Unit mW C/W C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT5401 Document number: DS30057 Rev. 11 - 2 2 of 7 www.diodes.com May 2018 (c) Diodes Incorporated MMBT5401 0.4 400 350 o Thermal Resistance ( C/W) Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100 D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) o Temperature ( C) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 o Single Pulse. T A=25 C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT5401 Document number: DS30057 Rev. 11 - 2 3 of 7 www.diodes.com May 2018 (c) Diodes Incorporated MMBT5401 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO -160 -150 -5 Collector Cutoff Current ICBO Emitter Cutoff Current ON CHARACTERISTICS (Note 10) IEBO -50 -50 -50 V V V nA A nA DC Current Gain hFE 50 60 50 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) -1 V Cobo 6 pF Small Signal Current Gain hfe 40 260 Current Gain-Bandwidth Product fT 100 300 MHz Noise Figure NF 8.0 dB SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: 240 -0.2 -0.5 V Test Condition IC = -100A, IE = 0 IC = -1mA, IB = 0 IE = -100A, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = +100C VEB = -4V, IC = 0 IC = -1mA, VCE = -5V IC = -10mA, VCE = -5V IC = -50mA, VCE = -5V IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VCB = -10V, f = 1MHz, IE = 0 VCE = -10V, IC = -1mA, f = 1kHz VCE = -10V, IC = -10mA, f = 100MHz VCE = -5V, IC = -200A, RS = 10 f = 1kHz 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT5401 Document number: DS30057 Rev. 11 - 2 4 of 7 www.diodes.com May 2018 (c) Diodes Incorporated MMBT5401 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 10,000 10.0 IC = 10 IB V CE = 5V R E T T I M E R O T C E L L O C , )T VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN N 1,000 IA G T N E R R 100 U C C D ,E F h 10 )V ( E G 1.0 A T L O V N O I T A R 0.1 U AT S A ( S E C V TA = 150C TA = 25C TA = -50C TA = 150C TA = -50C TA = 25C 0.01 1 1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 1 Typical DC Current Gain vs. Collector Current O ( E B V 1,000 1.0 0.9 0.8 VCE = 10V VCE = 5V ft, GAIN-BANDWIDTH PRODUCT (MHz) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) )V ( E G A T L O V N O -N R U T R E T T I M E -E S A B , )N TA = -50C 100 0.7 0.6 TA = 25C 0.5 0.4 TA = 150C 0.3 0.2 0.1 0.1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current MMBT5401 Document number: DS30057 Rev. 11 - 2 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig.45 Typical Gain-Bandwidth Product vs. Collector Current Fig. 5 of 7 www.diodes.com May 2018 (c) Diodes Incorporated MMBT5401 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X Note: Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. MMBT5401 Document number: DS30057 Rev. 11 - 2 6 of 7 www.diodes.com May 2018 (c) Diodes Incorporated MMBT5401 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2018, Diodes Incorporated www.diodes.com MMBT5401 Document number: DS30057 Rev. 11 - 2 7 of 7 www.diodes.com May 2018 (c) Diodes Incorporated