1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 50 Vdc
Collector–Base Voltage VCBO 50 Vdc
Emitter–Base Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0) V(BR)CBO 50 — Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0) ICBO — 50 nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO —50 nAdc
1. Pulse Test: Pulse Width ≤ 300
m
s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N5087/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces 2N5086/D)
2N5087
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
hFE 250
250
250
800
—
—
—
Collector–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.3 Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) —0.85 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) fT40 — MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb —4.0 pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 250 900 —
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)
NF —
—2.0
2.0
dB
1. Pulse Test: Pulse Width ≤ 300
m
s, Duty Cycle ≤ 2.0%.
2N5087
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = –
ā
5.0 Vdc, TA = 25°C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.010 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS
≈
0
IC = 10
µ
A
100
µ
A
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
30
µ
A
BANDWIDTH = 1.0 Hz
RS
≈∞
I
C
= 1.0 mA
300
µ
A
100
µ
A
30
µ
A
10
µ
A
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
2.0 1.0 mA
0.2
300
µ
A
NOISE FIGURE CONT OURS
(VCE = –
ā
5.0 Vdc, TA = 25°C)
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (
µ
A)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (
µ
A)
10
0.5 dB
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband
IC, COLLECTOR CURRENT (
µ
A)
10
10 Hz to 15.7 kHz
RS, SOURCE RESISTANCE (OHMS)
Noise Figure is Defined as:
NF
+
20 log10
ƪ
en2
)
4KTRS
)
In2RS2
4KTRS
ƫ
1
ń
2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’ s Constant (1.38 x 10–23 j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
en
In
K
T
RS
1.0 dB
2.0 dB
3.0 dB
20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
20 30 50 70 100 200 300 500 700 1.0 k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB 5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
2N5087
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 6. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.003
h , DC CURRENT GAIN
FE
TJ = 125
°
C
–55
°
C
25
°
C
VCE = 1.0 V
VCE = 10 V
Figure 7. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 8. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
1.6
100
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*
q
VC for VCE(sat)
q
VB for VBE
0.1 0.2 0.5
Figure 9. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
VCE, COLLECT OR–EMITTER VOLTAGE (VOLTS)
0.002
TA = 25
°
C
IC = 1.0 mA 10 mA 100 mA
Figure 10. Temperature Coefficients
50 mA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
00
IC, COLLECTOR CURRENT (mA)
TA = 25
°
C
PULSE WIDTH = 300
µ
s
DUTY CYCLE
≤
2.0%
IB = 400
µ
A
350
µ
A
300
µ
A250
µ
A
200
µ
A
*APPLIES for IC/IB
≤
hFE/2
25
°
C to 125
°
C
–55
°
C to 25
°
C
25
°
C to 125
°
C
–55
°
C to 25
°
C
40
60
0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
02.4
0.8
0
1.6
0.8
1.0 2.0 5.0 10 20 50 100
0.1 0.2 0.5
200
100
80
V, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
150
µ
A
100
µ
A
50
µ
A
2N5087
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 11. Turn–On Time
IC, COLLECTOR CURRENT (mA)
500
Figure 12. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
2.0 5.0 10 20 30 50
1000
Figure 13. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 14. Capacitance
VR, REVERSE VOLTAGE (VOL TS)
Figure 15. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.01.0
500
0.5
10
t, TIME (ns)
t, TIME (ns)
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
h , OUTPUT ADMITTANCE ( mhos)
oe
m
hie, INPUT IMPEDANCE (k )
Ω
5.0
7.0
10
20
30
50
70
100
300
7.0 70 100
VCC = 3.0 V
IC/IB = 10
TJ = 25
°
C
td @ VBE(off) = 0.5 V
tr
10
20
30
50
70
100
200
300
500
700
–
ā
2.0–1.0
VCC = –
ā
3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
TJ = 25
°
C
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
Cib
Cob
2.0 5.0 10 20 50
1.0
0.2 100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1 0.2 0.5
VCE = –10 Vdc
f = 1.0 kHz
TA = 25
°
C
2.0 5.0 10 20 50
1.0
2.0 100
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1 0.2 0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
°
C
200
–
ā
3.0 –
ā
5.0 –
ā
7.0 –
ā
20–10 –
ā
30 –
ā
50 –
ā
70 –100
TJ = 25
°
C
2N5087
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESIST ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z
θ
JA(t) = r(t)
•
R
θ
JA
TJ(pk) – TA = P(pk) Z
θ
JA(t)
t1t2
P(pk)
FIGURE 19
Figure 18. Active–Region Safe Operating Area
TJ, JUNCTION TEMPERATURE (
°
C)
104
–40
IC, COLLECTOR CURRENT (nA)
Figure 19. Typical Collector Leakage Current
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
400
2.0
IC, COLLECTOR CURRENT (mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 17 by the
steady state value RθJA.
Example:
The 2N5087 is dissipating 2.0 watts peak under the following
conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
10–2
10–1
100
101
102
103
–20 0 +20 +40 +60 +80 +100 +120 +140 +160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
TA = 25
°
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms 10
µ
s
TC = 25
°
C1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0 6.0 8.0 10 20 40
TJ = 150
°
C
100
µ
s
2N5087
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
2N5087
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
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