DS30116 Rev. B-1 1 of 2 SB170 - SB1100
www.diodes.com ã Diodes Incorporated
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·Schottky Barrier Chip
·Guard Ring Die Construction for
Transient Protection
·Ideally Suited for Automatic Assembly
·Low Power Loss, High Efficiency
·Surge Overload Rating to 25A Peak
·For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
·High Temperature Soldering:
260°C/10 Second at Terminal
·Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·Case: Molded Plastic
·Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
·Polarity: Cathode Band
·Weight: 0.3 grams (approx.)
·Mounting Position: Any
·Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A A
B
C
D
Characteristic Symbol SB170 SB180 SB190 SB1100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70 80 90 100 V
RMS Reverse Voltage VR(RMS) 49 56 63 70 V
Average Rectified Output Current @ TT = 85°CIO1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 25 A
Forward Voltage @ IF = 1.0A @ TA = 25°CVFM 0.80 V
Peak Reverse Current @ TA = 25°C
at Rated DC Blocking Voltage @ TA = 100°CIRM 0.5
10 mA
Typical Junction Capacitance (Note 2) Cj80 pF
Typical Thermal Resistance Junction to Lead RqJL 15 K/W
Typical Thermal Resistance Junction to Ambient (Note 1) RqJA 50 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +125 °C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DO-41
Dim Min Max
A25.4 ¾
B4.1 5.2
C0.71 0.86
D2.0 2.7
All Dimensions in mm
TCUDORPWEN
SPICE MODELS: SB170 SB180 SB190 SB1100
TCUDORPWEN
DS30116 Rev. B-1 2 of 2 SB170 - SB1100
www.diodes.com
0.1
1.0
10
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
g
.2 T
y
pical Forward Characteristics
20
0.50.1 0.9 1.3 1.7 2.1
T=25°C
j
10
20
30
4
0
0
110100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fi
g
. 3 Max Non-Repetitive Peak Fwd Sur
g
eCurrent
Single Half Sine-Wave
(JEDEC Method)
T=150°C
j
10
100
1000
0.1 1 10 100
C , JUNCTI
O
N CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
T=25°C
j
f = 1.0MHz
0
0.5
1.0
25 50 75 100 125 150
I AVERAGE FORWARD CURRENT (A)
(O),
T , LEAD TEMPERATURE (°C)
L
Fi
g
. 1 Forward Current Deratin
g
Curve
