BSS806NE
OptiMOS™2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• ESD protected
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 2.3 A
TA=70 °C 1.9
Pulsed drain current
ID,pulse TA=25 °C 9.3
Avalanche energy, single pulse
EAS ID=2.3 A, RGS=25 W10.8 mJ
Reverse diode dv/dtdv/dt
ID=2.3 A, VDS=16 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±8 V
Power dissipation1) Ptot TA=25 °C W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
ESD Class
JESD22-A114 -HBM 1C(1kV to 2kV)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
0.5
VDS
20
V
RDS(on),max
VGS=2.5 V
57
mW
VGS=1.8 V
82
ID
2.3
A
Product Summary
PG-SOT23
3
1
2
Type
Package
Tape and Reel
Marking
Halogen Free
Packing
BSS806NE
SOT23
H6327: 3000 pcs/ reel
YIs
Yes
Non dry
Rev 2.01 page 1 2014-01-16
BSS806NE
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
RthJA minimal footprint 1) - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS= 0 V, ID= 250 µA 20 - - V
Gate threshold voltage
VGS(th) VDS=VGS , ID=11 µA 0.3 0.55 0.75
Drain-source leakage current
IDSS
VDS=20 V, VGS=0 V,
Tj=25 °C
- - 1
mA
VDS=20 V, VGS=0 V,
Tj=150 °C
- - 100
Gate-source leakage current
IGSS VGS=8 V, VDS=0 V - - 6 µA
Drain-source on-state resistance
RDS(on) VGS=1.8 V, ID=1.3 A -57 82 mW
VGS=2.5 V, ID=2.3 A -41 57
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=1.9 A
9 - S
Values
1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
Rev 2.01 page 2 2014-01-16
BSS806NE
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -370 529 pF
Output capacitance
Coss -118 169
Reverse transfer capacitance
Crss -20 29
Turn-on delay time
td(on) -7.5 -ns
Rise time
tr-9.9 -
Turn-off delay time
td(off) -12.0 -
Fall time
tf-3.7 -
Gate Charge Characteristics
Gate to source charge
Qgs -0.55 -nC
Gate to drain charge
Qgd -0.58 -
Gate charge total
Qg-1.7 -
Gate plateau voltage
Vplateau -1.5 - V
Reverse Diode
Diode continous forward current IS- - 0.5 A
Diode pulse current
IS,pulse - - 9.3
Diode forward voltage
VSD
VGS=0 V, IF=2.3 A,
Tj=25 °C
-0.82 1.1 V
Reverse recovery time
trr -11 -ns
Reverse recovery charge
Qrr -3.3 -nC
VR=10 V, IF=2.3 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=10 V,
f=1 MHz
VDD=10 V, VGS=2.5 V,
ID=2.3A, RG,ext=6 W
VDD=10 V, ID=2.3 A,
VGS=0 to 2.5 V
Rev 2.01 page 3 2014-01-16
BSS806NE
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥2.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-3
10-2
10-1
100
101
102
ID [A]
VDS [V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
102
10-1
100
101
102
103
ZthJA [K/W]
tp [s]
0
0.125
0.25
0.375
0.5
0 40 80 120 160
Ptot [W]
TA [°C]
0.0
0.5
1.0
1.5
2.0
2.5
0 20 40 60 80 100 120 140 160
ID [A]
TA [°C]
Rev 2.01 page 4 2014-01-16
BSS806NE
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
4
8
12
16
20
0 2 4 6 8
gfs [S]
ID [A]
25 °C
150 °C
0
1
2
3
4
0.0 0.5 1.0 1.5 2.0
ID [A]
VGS [V]
1.1 V
1.2 V
1.3 V
1.4 V
1.5 V
1.6 V
1.8 V
2.5 V
0
1
2
3
4
0.0 0.4 0.8 1.2 1.6 2.0
ID [A]
VDS [V]
1.3 V
1.4 V
1.5 V
1.6 V
1.8 V
2 V
2.5 V
0
20
40
60
80
100
120
0 1 2 3 4
RDS(on) [mW]
ID [A]
Rev 2.01 page 5 2014-01-16
BSS806NE
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=2.3 A; VGS=2.5 V VGS(th)=f(Tj); VDS=VGS; ID=11 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
20
40
60
80
100
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
typ
98 %
2 %
-0.4
0
0.4
0.8
1.2
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
0 5 10 15 20
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
IF [A]
VSD [V]
Rev 2.01 page 6 2014-01-16
BSS806NE
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=2.3 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
4 V
10 V
16 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
IAV [A]
tAV [µs]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
Rev 2.01 page 7 2014-01-16
BSS806NE
SOT23
Package Outline:
Footprint: Packaging:
Dimensions in mm
Rev 2.01 page 8 2014-01-16
BSS806NE
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.01 page 9 2014-01-16
