RHRG5060 March 2001 Data Sheet 50 A, 600 V, Hyperfast Diode Features The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Hyperfast Recovery trr = 50 ns (@ IF = 50 A) * Max Forward Voltage, VF = 2.1 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRG5060 PACKAGE TO-247 Packaging BRAND JEDEC STYLE TO-247 RHRG5060 ANODE NOTE: When ordering, use the entire part number. CATHODE CATHODE (BOTTOM SIDE METAL) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRG5060 UNIT Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 600 V 600 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 600 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 93oC) 50 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20 kHz) 100 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60 Hz) 500 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 40 mJ -65 to 175 oC (c)2001 Fairchild Semiconductor Corporation RHRG5060 Rev. B 1 www.fairchildsemi.com RHRG5060 Electrical Specificatio s TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX IF = 50 A - - 2.1 V IF = 50 A, TC = 150oC - - 1.7 V VR = 600 V - - 250 A VR = 600 V, TC = 150oC - - 1.5 mA IF = 1 A, dIF/dt = 100 A/s - - 45 ns IF = 50 A, dIF/dt = 100 A/s - - 50 ns ta IF = 50 A, dIF/dt = 100 A/s - 25 - ns tb IF = 50 A, dIF/dt = 100 A/s - 20 - ns Qrr IF = 50 A, dIF/dt = 100 A/s - 65 - nC VR = 10 V, IF = 0 A - 140 - pF - - 1.0 oC/W VF IR trr CJ RJC UNIT DEFINITIONS VF = Instantaneous forward voltage (pw = 300 s, D = 2%). IR = Instantaneous reverse current. Trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). Qrr = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = pulse width. D = Duty cycle. Typical Performance Curves 300 3000 175oC IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 1000 100 100 175oC 10 1 0 0.5 100oC 1 25oC 1.5 2 2.5 1 25oC 0.1 0.01 3 VF , FORWARD VOLTAGE (V) 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2001 Fairchild Semiconductor Corporation RHRG5060 Rev. B 100oC 10 FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 www.fairchildsemi.com RHRG5060 Typical Performance Curves 150 60 TC = 25oC, dIF/dt = 100A/s 50 40 30 ta 20 tb 75 ta 50 tb 25 0 1 Trr 100 10 0 TC = 100oC, dIF/dt = 100A/s 125 Trr t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) (Continued) 10 50 1 10 FIGURE 4. Trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 3. Trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) 250 t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 100A/s 200 Trr 150 100 ta 50 0 tb 1 10 IF, FORWARD CURRENT (A) 50 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 50 50 40 DC SQ. WAVE 30 20 10 0 25 50 FIGURE 5. Trr, ta AND tb CURVES vs FORWARD CURRENT 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 350 300 250 200 150 100 50 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2001 Fairchild Semiconductor Corporation RHRG5060 Rev. B 3 www.fairchildsemi.com RHRG5060 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE CURRENT SENSE + - IGBT t1 IF dIF dt ta 0 VDD Trr tb 0.25 IRM IRM t2 FIGURE 9. Trr WAVEFORMS AND DEFINITIONS FIGURE 8. Trr TEST CIRCUIT IMAX = 1.4A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) Q1 VAVL L R CURRENT SENSE + VDD DUT - IL IL I V VDD t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation RHRG5060 Rev. B t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 4 www.fairchildsemi.com (c)2001 Fairchild Semiconductor Corporation RHRG5060 Rev. B 5 www.fairchildsemi.com