VS-1EFH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 1 A FRED Pt(R) FEATURES eSMP(R) Series * Hyperfast recovery time, reduced Qrr, and soft recovery * 175 C maximum operating junction temperature * Specified for output and snubber operation * Low forward voltage drop Top view * Low leakage current Bottom view * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMF (DO-219AB) Cathode * Wave and reflow solderable Anode * AEC-Q101 qualified, meets JESD 201 class 2 whisker test DESIGN SUPPORT TOOLS * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery. Models Available PRIMARY CHARACTERISTICS IF(AV) The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. 1A VR 200 V VF at IF (typ. 125 C) 0.74 V These devices are intended for use in snubber boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. trr 25 ns TJ max. 175 C Package SMF (DO-219AB) Circuit configuration Single Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM Average rectified forward current IF(AV) TC = 160 C Non-repetitive peak surge current IFSM TJ = 25 C Operating junction and storage temperature range (1) VALUES UNITS 200 V 1 A 35 TJ, TStg -65 to +175 C Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 1 A - 0.87 0.93 IR = 100 A IF = 1 A, TJ = 125 C - 0.74 0.8 VR = VR rated - - 2 TJ = 125 C, VR = VR rated - 0.5 8 VR = 200 V - 5 - UNITS V A pF Revision: 10-Aug-2018 Document Number: 95786 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1EFH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS IRRM Reverse recovery charge Qrr TYP. MAX. UNITS IF = 1 A, dIF/dt = 50 A/s, VR = 30 V - 24 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 C - 16 - - 23 - - 1.6 - - 2.5 - TJ = 25 C - 13 - TJ = 125 C - 30 - MIN. TYP. MAX. UNITS -65 - +175 C TJ = 125 C Peak recovery current MIN. IF = 1 A dIF/dt = 200 A/s VR = 160 V TJ = 25 C TJ = 125 C ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to case RthJC Device mounted on PCB with 8 mm x 16 mm soldering lands - - 17 C/W Thermal resistance, junction to ambient RthJA Device mounted on PCB with 2 mm x 3.5 mm soldering lands - - 140 C/W Approximate weight MDH 100 100 10 g oz. Case style SMF (DO-219AB) TJ = 175 C 1 TJ = 150 C TJ = 125 C TJ = 25 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) Marking device 0.015 0.0005 175 C 10 150 C 1 125 C 0.1 0.01 25 C 0.001 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Aug-2018 Document Number: 95786 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1EFH02HM3 www.vishay.com Vishay Semiconductors 1.2 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 0.9 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0.6 0.3 0 1 0 50 100 150 0 200 VR - Reverse Voltage (V) 0.6 0.9 1.2 1.5 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 180 35 175 30 25 170 DC trr (ns) Allowable Case Temperature (C) 0.3 165 125 C 20 25 C 15 160 Square wave (D = 0.50) 80 % rated VR applied 155 See note 10 (1) 5 150 0 0.2 0.4 0.6 0.8 1 100 1.2 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 40 35 125 C Qrr (nC) 30 25 20 25 C 15 10 100 1000 dIF/dt (A/s) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 10-Aug-2018 Document Number: 95786 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1EFH02HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 1 E F H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (1 = 1 A) 3 - Circuit configuration: E = single diode 4 - F = SMF package 5 - Process type, 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-1EFH02HM3/I 10 000 10 000 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95572 Part marking information www.vishay.com/doc?95618 Packaging information www.vishay.com/doc?95577 SPICE model www.vishay.com/doc?96012 Revision: 10-Aug-2018 Document Number: 95786 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SMF (DO-219AB) DIMENSIONS in millimeters (inches) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.10 (0.003) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 Revision: 16-Apr-18 Document Number: 95572 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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