Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC369
TO-92
BCE
Transistor in TO-92 Plastic Packa
e Intended for Low Volta
e
Hi
h Current LF
A
lications
Suitable for Class-B Audio Out
ut Sta
es u
to 3W
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCES 25 V
Collector -Emitter Voltage VCEO 20 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC 1.0 A
Collector Current Peak Value ICM 2.0 A
Base Current IB 100 mA
Base Current Peak Value IBM 200 mA
Power Dissipation @ Ta=25 deg C PTA 0.8 W
@ Tc=25 deg C PTC 1.0 W
Junction Temperature Tj 150 deg C
Storage Temperature Range Tstg -65 to +150 deg C
Thermal Resistance
Junction to Ambient in Free Air Rth (j-a) 156 deg C/W
Junction to Ambient * Rth (j-a) 125 deg C/W
Junction to Case Rth (j-c) 60 deg C/W
*Mounted on printed-circuit board , maximum lead length 4mm, mounting
pad for collector lead min 10 mm x10 mm
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Cut- off Current ICBO IE=0, VCB=25V - - 10 uA
-
Tj=150 deg C
IE=0, VCB=25V - - 1.0 mA
Emitter Cut- off Current IEBO VEB=5V, IC=0 - - 10 uA
Base- Emitter on Voltage VBE(on) IC=5mA, VCE=10V - 0.7 V
IC=1A, VCE=1V - 1.0 V
Collector- Emitter Saturation Voltage VCE(Sat) IC=1A, IB=100mA - - 0.5 V
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IEC QC 700000
IS / IEC QC 750100
Continental Device India Limited Data Sheet Page 1 of 3