1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
401.11.2003
12
3
Type
Code
2.1
±0.1
2
±0.1
1
±0.1
1.25
±0. 1
0.3
1.3
BC 807W / BC 808W General Purpose Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP
Power dissipation – Verlustleistung 225 mW
Plastic case SOT-323
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 807W BC 808W
Collector-Emitter-voltage B open - VCE0 45 V 25 V
Collector-Emitter-voltage B shorted - VCES 50 V 30 V
Collector-Base-voltage E open - VCB0 50 V 30 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 225 mW 1)
Collector current – Kollektorstrom (DC) - IC500 mA
Peak Coll. current – Kollektor-Spitzenstrom - ICM 1000 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom IEM 1000 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA BC807W
BC808W
hFE 100 – 600
- VCE = 1 V, - IC = 500 mA hFE 40 – –
- VCE = 1 V, - IC = 100 mA
Group -16W hFE 100 160 250
Group -25W hFE 160 250 400
Group -40W hFE 250 400 600
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
5
01.11.2003
General Purpose Transistors BC 807W / BC 808W
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Min. Typ. Max.
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA - VCEsat – – 0.7 V
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA - VBEsat – – 1.3 V
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA - VBE – – 1.2 V
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V - ICB0 – – 100 nA
IE = 0, - VCB = 20 V, Tj = 150/C- I
CB0 ––5 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V - IEB0 – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz fT80 MHz 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 10 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 620 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC 817W / BC 818W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstärkungsgruppen pro Typ
BC 807-16W = 5A BC 807-25W = 5B BC 807-40W = 5C
BC 807W = 5D
BC 808-16W = 5E BC 808-25W = 5F BC 808-40W = 5G
BC 808W = 5H
