KE C SEMICONDUCTOR 2N0401S KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM MILLIMETERS * High Collector Breakdwon Voltage ; ano) 0S > Veno=-160V, Vero=-150V c 1.30 MAX - Low Leakage Current. r OES > Icpo=-50nA(Max.) @Vcy=-120V G 199 * Low Saturation Voltage J | 0.13+0.10/-0.08 > Verisav=-0.5V(Max.) GIc=-50mA, Ip=-S5mA x 0.00 o.10 * Low Noise : NF=8dB (Max.) = a M 020 MIN N 1.00+0.20/-0.10 FUR, EES od out EF MAXIMUM RATINGS (Ta=25) 1. EMITTER 2. BASE CHARACTERISTIC SYMBOL | RATING | UNIT 3. COLLECTOR Collector-Base Voltage Vero -160 Vv Collector-Emitter Voltage Vero -150 Vv SOT 23 Emitter-Base Voltage VERO -5 Vv Collector Current Ic -600 mA Marking H Lot No. Base Current Ip -100 mA Collector Power Dissipation Pe 300 mW Type Name | '/ fi = Junction Temperature Tj 150 Cc H HH Storage Temperature Range Tstg -65 ~ 150 Cc 1998. 6. 15 Revision No : 1 KEC 1/2 2N0401S ELECTRICAL CHARACTERISTICS (Ta=25'C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. | MAX. | UNIT Ven=-120V, In=0 - - -50 nA Collector Cut-off Current Teno Vep=-120V, In-0, Ta=100C - - -50 BA Emitter Cut-off Current Teno Ven=-38V, Ic=0 - - -30 nA Collector-Base __ _ _ _ _ Breakdown Voltage Vinicro Ic=-G.lmA, n=O 160 Vv Collector-Emitter __ 2 ae _ _ Breakdown Voltage Venricro Ic=-ImA, n=O 150 Vv Emitter-Base __ _ - _ _ Breakdown Voltage Venmipno In=10WA, Ic=0 9 Vv hye(1) Ver=-5V, Ic=-1mA 50 _ - DC Current Gain hrr(2) Vcr=-5V, Ic=-l0mA 60 - 240 hre(3) Ven=-5V, Ic=-50mA 50 - - Collector-Emitter Vertsaol | Ic=-l0mA, Ip=-lmA - - -0.2 y Saturation Voltage Veweav2 | Ie=-50mA, Ip=-5mA - - -0.5 Base-Emitter Vortsavl | Ie=-10mA, In=-ImA - - -1.0 \ Saturation Voltage Vorvav2 | Ie=-50mA, Iy=-SmA _ _ -1.0 Transition Frequency fr Vcr=-l0V, Ic=-l0mA, f=100MHz 100 - 300 MHz Collector Output Capacitance Cop Vep=-10V, In-0, f=1MHz - - 6 pF Small-Signal Current Gain hfe Vcr=-l0V, Ic=-lmA, f=1kHz 40 - 200 . . Ver=-5V, Ic=-250uA _ _ Noise Figure NF Rg=1kQ, f=10Hz~15.7kHz 8 dB *Pulse Test : Pulse Width <300uS, Duty Cycle<2% 1998. 6. 15 Revision No : 1 KEC 2/2