Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
Tamb*750C
Type Symbol
PD
lz
Tj
Tstg
Value
500
PD/Vz
200
-65~+200
Unit
mW
mA
0C
0C
Maximum Thermal Resistance
Tj=250C
Parameter
Junction ambient
Test Condltions
I=9.5mm(3/8") TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrcal Characteristics
Tj=250C
Parameter
Forward voltage
Test Conditions
lF=200mA
Type Symbol
VF
Min Typ Max
1.1
Unit
V
1N5221B~1N5267B
Zener diode Voltage Range
2.4 to 75 Volts
DO-35
Dimensions in inches and (millimeters)
1.02(26.0)
MIN
1.02(26.0)
MIN
.165(4.2)
MAX
.079(2.0)
MAX
.020(.52)
TYP
Features
1.High reliability
2.Very sharp reverse characteristic
3.Low reverse current level
4.Vz-tolerance*5%
Applications
Voltage stabilization
Absoluto Maximum Ratings
Tj=250C
Type
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
Vznom
V
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
*
<1200
<1250
<1300
<1400
<1600
<1600
<1700
<1900
<2000
<1900
<1600
<l600
<1600
<1000
<750
<500
<500
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<700
<700
<800
<900
<1000
<1100
<1300
<1400
<1400
<1600
<1700
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
uA
<100
<100
<75
<75
<50
<25
<15
<10
<5
<5
<5
<5
<5
<5
<3<3
<3
<3
<3
<3
<2
<1
<0.5
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
15
16
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
58
TKvz
%/K
<-0.085
<-0.085
<-0.080
<-0.080
<-0.075
<-0.070
<-0.065
<-0.060
<+0.055
<+0.030
<+0.030
<+0.038
<+0.038
<+0.045
<+0.050
<+0.058
<+0.062
<+0.065
<+0.068
<+0.075
<+0.076
<+0.077
<+0.079
<+0.082
<+0.082
<+0.083
<+0.084
<+0.085
<+0.086
<+0.086
<+0.087
<+0.088
<+0.089
<+0.090
<+0.091
<+0.091
<+0.092
<+0.093
<+0.094
<+0.095
<+0.095
<+0.096
<+0.096
<+0.097
<+0.097
<+0.097
<+0.098
lzt
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
*
<30
<30
<30
<30
<29
<28
<24
<23
<22
<19
<17
<11
<7
<7
<5
<6
<8
<8
<10
<17
<22
<30
<13
<15
<16
<17
<19
<21
<23
<25
<39
<33
<35
<41
<44
<49
<58
<70
<80
<93
<105
<125
<150
<170
<185
<230
<270
1)Based on DC-measurement at thermal equilibrium while maintaining the lead temperature (TL)at 300C,
9.5mm(3/8") from the diode body.
Rzk at lzk lR at VRfor Vzt and Rzt
