ES3F, ES3G www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES * Glass passivated chip junction * Ideal for automated placement * Ultrafast reverse recovery time * Low switching losses, high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified DO-214AB (SMC) * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 300 V, 400 V IFSM 100 A trr 35 ns VF 1.1 V TJ max. 150 C MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code ES3F ES3G EF EG UNIT Maximum repetitive peak reverse voltage VRRM 300 400 V Working peak reverse voltage VRWM 225 300 V Maximum RMS voltage VRMS 210 Maximum average forward rectified current at TL = 110 C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A TJ, TSTG - 55 to + 150 C Operating junction and storage temperature range Revision: 13-Mar-12 280 V Document Number: 88590 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3F, ES3G www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL VF 3.0 A TA = 25 C Maximum DC reverse current at working peak reverse voltage ES3F (1) UNIT 1.1 V 10 IR TA = 100 C ES3G A 350 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/s, VR = 30 V, Irr = 0.1 IRM trr 50 ns Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/s, VR = 30 V, Irr = 0.1 IRM IRM 3.0 A Maximum stored charge IF = 1.0 A, dI/dt = 100 A/s, VR = 30 V, Irr = 0.1 IRM Qrr 50 nC Typical junction capacitance 4.0 V, 1 MHz CJ 30 pF Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance ES3F ES3G RJA (1) 50 RJL (1) 15 UNIT C/W Note Units mounted on P.C.B. 5.0 mm x 5.0 mm (0.013 mm thick) land areas (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED P/N PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES3G-E3/57T 0.211 57T 850 7" diameter plastic tape and reel ES3G-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel ES3GHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel (1) 0.211 9AT 3500 13" diameter plastic tape and reel ES3GHE3/9AT Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 8.3 ms Single Half Sine-Wave at TL = 110 C 125 100 75 50 25 0 0 80 90 100 110 120 130 140 150 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 13-Mar-12 Document Number: 88590 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3F, ES3G www.vishay.com Vishay General Semiconductor 100 TJ = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 10 1 0.1 1.5 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance 10 000 3.0 D = 0.5 TJ = 150 C TJ = 125 C TJ = 100 C 100 10 TJ = 25 C 1 D = 0.8 D = 0.3 2.5 1000 Average Power Loss (W) Instantaneous Reverse Leakage Current (A) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p D = 0.2 2.0 D = 1.0 D = 0.1 1.5 T 1.0 0.5 D = tp/T tp 0 0.1 0 20 40 60 80 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 7 - Forward Power Loss Characteristics Recovered Stored Charge/ Reverse Recovery Time nC/ns 200 at 5 A, 50 A/s 160 120 at 2 A, 20 A/s 80 at 2 A, 20 A/s at 5 A, 50 A/s at 1 A, 100 A/s at 1 A, 100 A/s 40 trr Qrr 0 25 50 75 100 125 150 175 Junction Temperature (C) Fig. 5 - Reverse Switching Characteristics Revision: 13-Mar-12 Document Number: 88590 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES3F, ES3G www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 13-Mar-12 Document Number: 88590 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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