1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
nLow collector capacitance
nLow collector-emitter saturation voltage
nClosely matched current gain
nReduces number of components and board space
nNo mutual interference between the transistors
nAEC-Q101 qualified
1.3 Applications
nGeneral-purpose switching and amplification
1.4 Quick reference data
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
Rev. 01 — 17 July 2009 Product data sheet
Table 1. Product overview
Type number Package NPN/NPN
complement PNP/PNP
complement
NXP JEITA
BC846BPN SOT363 SC-88 BC846BS BC856BS
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 65 V
ICcollector current - - 100 mA
TR1 (NPN)
hFE DC current gain VCE =5V; I
C= 2 mA 200 300 450
TR2 (PNP)
hFE DC current gain VCE =−5V;
IC=−2mA 200 290 450
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 2 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
132
4
56
sym019
2
13
5
6
TR1 TR2
4
Table 4. Ordering information
Type number Package
Name Description Version
BC846BPN SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
Type number Marking code[1]
BC846BPN PJ*
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 3 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base - 65 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 100 mA
ICM peak collector current single pulse;
tp≤1ms - 200 mA
IBM peak base current single pulse;
tp≤1ms - 200 mA
Ptot total power dissipation Tamb ≤25 °C[1] - 200 mW
Per device
Ptot total power dissipation Tamb ≤25 °C[1] - 300 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT363 (SC-88)
Tamb (°C)
−75 17512525 75−25
006aab618
200
300
100
400
500
Ptot
(mW)
0
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 4 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 625 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 230 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 416 K/W
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab619
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
1
δ = 1 0.75
0.50 0.33
0.10
0.05 0.02
0.01
0
0.20
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 5 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1 (NPN)
ICBO collector-basecut-off
current VCB =50V; I
E=0A --15nA
VCB =30V; I
E=0A;
Tj= 150 °C--5µA
IEBO emitter-base cut-off
current VEB =6V; I
C= 0 A - - 100 nA
hFE DC current gain VCE =5V
IC=10µA - 280 -
IC= 2 mA 200 300 450
VCEsat collector-emitter
saturation voltage IC= 10 mA; IB= 0.5 mA - 55 100 mV
IC= 100 mA; IB= 5 mA - 200 300 mV
VBEsat base-emitter
saturation voltage IC= 10 mA; IB= 0.5 mA - 755 850 mV
IC= 100 mA; IB= 5 mA - 1000 - mV
VBE base-emitter voltage VCE =5V
IC= 2 mA 580 650 700 mV
IC= 10 mA - - 770 mV
Cccollector capacitance VCB =10V; I
E=i
e=0A;
f=1MHz - 1.9 - pF
Ceemitter capacitance VEB = 0.5 V; IC=i
c=0A;
f=1MHz -11-pF
fTtransition frequency VCE =5V; I
C=10mA;
f = 100 MHz 100 - - MHz
NF noise figure VCE =5V; I
C= 0.2 mA;
RS=2kΩ;
f = 10 Hz to 15.7 kHz
- 1.9 - dB
VCE =5V; I
C= 0.2 mA;
RS=2kΩ; f = 1 kHz;
B = 200 Hz
- 3.1 - dB
TR2 (PNP)
ICBO collector-basecut-off
current VCB =−50 V; IE=0A - - −15 nA
VCB =−30 V; IE=0A;
Tj= 150 °C--−5µA
IEBO emitter-base cut-off
current VEB =−6 V; IC=0A - - −100 nA
hFE DC current gain VCE =−5V
IC=−10 µA - 270 -
IC=−2 mA 200 290 450
VCEsat collector-emitter
saturation voltage IC=−10 mA;
IB=−0.5 mA -−55 −100 mV
IC=−100 mA; IB=−5mA - −200 −300 mV
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 6 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
VBEsat base-emitter
saturation voltage IC=−10 mA;
IB=−0.5 mA -−755 −850 mV
IC=−100 mA; IB=−5mA - −900 - mV
VBE base-emitter voltage VCE =−5V
IC=−2mA −600 −650 −750 mV
IC=−10 mA - - −820 mV
Cccollector capacitance VCB =−10 V;IE=i
e=0A;
f=1MHz - 2.3 - pF
Ceemitter capacitance VEB =−0.5 V;
IC=i
c= 0 A; f = 1 MHz -10-pF
fTtransition frequency VCE =−5 V; IC=−10 mA;
f = 100 MHz 100 - - MHz
NF noise figure VCE =−5V;I
C=−0.2 mA;
RS=2kΩ;
f = 10 Hz to 15.7 kHz
- 1.6 - dB
VCE =−5V;I
C=−0.2 mA;
RS=2kΩ; f = 1 kHz;
B = 200 Hz
- 2.9 - dB
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCE =5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 3. TR1 (NPN): DC current gain as a function of
collector current; typical values Fig 4. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aaa533
200
400
600
hFE
0
IC (mA)
10−2103
102
10−1101
(3)
(1)
(2)
006aaa532
VCE (V)
0108462
0.08
0.12
0.04
0.16
0.20
IC
(A)
0
IB (mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 7 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
VCE =5V; T
amb =25°CI
C/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 5. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values Fig 6. TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
VCE =5V; T
amb =25°C
Fig 7. TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. TR1 (NPN): Transition frequency as a function
of collector current; typical values
006aaa536
0.6
0.8
1
VBE
(V)
0.4
IC (mA)
10−1103
102
110
006aaa534
IC (mA)
10−1103
102
110
0.5
0.9
1.3
0.3
0.7
1.1
VBEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10−1
10
VCEsat
(V)
10−2
IC (mA)
10−1103
102
110
(1)
(2)
(3)
006aaa537
IC (mA)
110
2
10
102
103
fT
(MHz)
10
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 8 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
f = 1 MHz; Tamb =25°C f = 1 MHz; Tamb =25°C
Fig 9. TR1 (NPN): Collector capacitance as a
function of collector-base voltage; typical
values
Fig 10. TR1 (NPN): Emitter capacitance as a function
of emitter-base voltage; typical values
VCE =−5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 11. TR2 (PNP): DC current gain as a function of
collector current; typical values Fig 12. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
VCB (V)
0108462
006aab620
2
4
6
Cc
(pF)
0
006aaa539
VEB (V)
0642
9
11
7
13
15
Ce
(pF)
5
006aaa541
200
400
600
hFE
0
IC (mA)
−10−2−103
−102
−10−1−10−1
(1)
(2)
(3)
006aaa540
VCE (V)
0−10−8−4−6−2
−0.08
−0.12
−0.04
−0.16
−0.20
IC
(A)
0
−0.25
IB (mA) = −2.5
−0.5
−0.75
−1.0
−1.25
−1.5
−1.75
−2.0
−2.25
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 9 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
VCE =−5 V; Tamb =25°CI
C/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 13. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values Fig 14. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
VCE =−5 V; Tamb =25°C
Fig 15. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 16. TR2 (PNP): Transition frequency as a function
of collector current; typical values
006aaa544
−0.6
−0.8
−1
VBE
(V)
−0.4
IC (mA)
−10−1−103
−102
−1−10
006aaa542
IC (mA)
−10−1−103
−102
−1−10
−0.5
−0.9
−1.3
−0.3
−0.7
−1.1
VBEsat
(V)
−0.1
(1)
(2)
(3)
006aaa543
−1
−10−1
−10
VCEsat
(V)
−10−2
IC (mA)
−10−1−103
−102
−1−10
(1)
(2)
(3)
IC (mA)
−1−102
−10
006aaa545
102
103
fT
(MHz)
10
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 10 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
f = 1 MHz; Tamb =25°C f = 1 MHz; Tamb =25°C
Fig 17. TR2 (PNP): Collector capacitanceasa function
of collector-base voltage; typical values Fig 18. TR2 (PNP): Emitter capacitance as a function
of emitter-base voltage; typical values
VCB (V)
0−10−8−4−6−2
006aab623
4
6
2
8
10
Cc
(pF)
0
006aaa547
VEB (V)
0−6−4−2
9
11
7
13
15
Ce
(pF)
5
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 11 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 19. Package outline SOT363 (SC-88)
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BC846BPN SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 12 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
11. Soldering
Fig 20. Reflow soldering footprint SOT363 (SC-88)
Fig 21. Wave soldering footprint SOT363 (SC-88)
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 13 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC846BPN_1 20090717 Product data sheet - -
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 14 of 15
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 July 2009
Document identifier: BC846BPN_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 11
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Packing information. . . . . . . . . . . . . . . . . . . . . 11
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14 Contact information. . . . . . . . . . . . . . . . . . . . . 14
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
